聚3-己基噻吩-b-聚十六烷氧基联烯嵌段聚合物的制备及其场效应性能

庞博; 葛丰; 邱龙臻

doi:10.3788/fgxb20163706.0669

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聚3-己基噻吩-b-聚十六烷氧基联烯嵌段聚合物的制备及其场效应性能

材料合成及性能 | 更新时间：2020-08-12

- 聚3-己基噻吩-b-聚十六烷氧基联烯嵌段聚合物的制备及其场效应性能
- Synthesis and Field Effect Transistor Performance of Poly(3-hexylthiophene)-b-poly(hexadecyloxylallene) Blockpolymer
- 发光学报 2016年37卷第6期页码：669-675
- 作者机构：
  
  1. 合肥工业大学化学与化工学院,安徽合肥,230009
  2. 特种显示技术教育部重点实验室, 特种显示技术国家工程实验室, 现代显示技术省部共建国家重点实验室培育基地, 合肥工业大学光电技术研究院,安徽合肥,230009
- 作者简介：
- 基金信息：
  
  国家自然科学基金(21174036,2120417,51203039);教育部"新世纪优秀人才"计划(NCET-12-0839)资助项目
- DOI：10.3788/fgxb20163706.0669
  中图分类号： O633;TN321+.5
- 纸质出版日期：2016-06-05，
  
  收稿日期：2016-01-18，
  
  修回日期：2016-03-29，
- 稿件说明：
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庞博, 葛丰, 邱龙臻. 聚3-己基噻吩-b-聚十六烷氧基联烯嵌段聚合物的制备及其场效应性能[J]. 发光学报, 2016,37(6): 669-675

PANG Bo, GE Feng, QIU Long-zhen. Synthesis and Field Effect Transistor Performance of Poly(3-hexylthiophene)-b-poly(hexadecyloxylallene) Blockpolymer[J]. Chinese Journal of Luminescence, 2016,37(6): 669-675
庞博, 葛丰, 邱龙臻. 聚3-己基噻吩-b-聚十六烷氧基联烯嵌段聚合物的制备及其场效应性能[J]. 发光学报, 2016,37(6): 669-675 DOI： 10.3788/fgxb20163706.0669.

PANG Bo, GE Feng, QIU Long-zhen. Synthesis and Field Effect Transistor Performance of Poly(3-hexylthiophene)-b-poly(hexadecyloxylallene) Blockpolymer[J]. Chinese Journal of Luminescence, 2016,37(6): 669-675 DOI： 10.3788/fgxb20163706.0669.

摘要

以溴代十六烷、丙炔醇为原料通过取代反应、还原重排反应制备了十六烷氧基联烯

然后以氯化(三环己基膦)镍作为催化剂

通过控制加料顺序一锅制备了聚3-己基噻吩-

-聚十六烷氧基联烯的嵌段聚合物。通过核磁共振氢谱和体积排除色谱对产物进行了表征和确证。对聚3-己基噻吩-

-聚十六烷氧基联烯嵌段聚合物的热学性能、光学性能及电学性能进行了研究。差示扫描量热法和热重分析结果表明

嵌段共聚物具有两个玻璃化转变温度及两个热分解温度

说明其具有明显相分离。以嵌段共聚物为半导体活性材料

制备了场效应晶体管器件。使用热退火对器件进行热处理

发现迁移率随退火温度的上升而提高。器件在200℃退火温度下的平均迁移率为7.0310

-4

-1

最大迁移率为1.310

-3

-1

阈值电压为5.44V。

Abstract

Hexadecyloxylallene was prepared by the substitution reaction of propargyl alcohol with bromohexadecane and the followed rearrangement reaction. Poly(3-hexylthiophene)-

-poly(hexadecyloxylallene) copolymers was then synthesized in one pot

via

sequential addition of monomers of 3-hexylthiophene and hexadecyloxylallene by using Ni(dppp)Cl

as a single catalyst. The products were confirmed by

H NMR and size-exclusion chromatography (SEC). The thermal

optical and electrical properties of the obtained block copolymer were investigated. The analysis of P3HT-

-PHA in the solid state using differential scanning calorimetry (DSC) and thermogravimetric analysis(TGA) revealed that the material could undergo microphase separation

as two glass transition temperatures (

) and two part of the decomposition process assignable to both P3HT and PHA phases were observed. The thin-film transistors (TFT) with bottom-gate top-contact configuration were fabricated to characterize the electrical properties of the obtained block copolymer. The TFT devices were subsequently annealed at different temperatures (room temperature

100

150

and 200 ℃) in a glovebox under nitrogen condition. The field-effect mobility shows an increasing trend when the annealing temperature increases. Thermal annealing is performed as an effective method to optimize the device performance because it can improve the crystallinity of the thin film. Meanwhile

thermal annealing can significantly lower the effect of the residual solvent on the carrier transport

resulting in efficient charge carrier transport. When the annealing temperature is 200 ℃

polymer-based OTFTs devices yield an average field-effect mobility of 7.0310

-4

-1

and a maximum field-effect mobility of 1.310

-3

-1

. The transfer curve shows that the threshold voltage is 5.44 V.

关键词

有机薄膜晶体管聚3-己基噻吩一锅法嵌段聚合物

Keywords

organic thin-film transistorpoly-3-hexylthiopheneone-pot methodblock polymer

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