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1. 四川师范大学 化学学院,四川 成都,610068
2. 四川大学 化学学院,四川 成都,610065
纸质出版日期:2016-06-05,
收稿日期:2016-01-16,
修回日期:2016-03-16,
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熊小莉, 薛康, 尤超等. 化学腐蚀法制备荧光多孔硅及对Ag<sup>+</sup>的检测[J]. 发光学报, 2016,37(6): 662-668
XIONG Xiao-li, XUE Kang, YOU Chao etc. Preparation of Fluorescent Porous Silicon by Chemical Etching Method and Its Application in Ag<sup>+</sup> Detection[J]. Chinese Journal of Luminescence, 2016,37(6): 662-668
熊小莉, 薛康, 尤超等. 化学腐蚀法制备荧光多孔硅及对Ag<sup>+</sup>的检测[J]. 发光学报, 2016,37(6): 662-668 DOI: 10.3788/fgxb20163706.0662.
XIONG Xiao-li, XUE Kang, YOU Chao etc. Preparation of Fluorescent Porous Silicon by Chemical Etching Method and Its Application in Ag<sup>+</sup> Detection[J]. Chinese Journal of Luminescence, 2016,37(6): 662-668 DOI: 10.3788/fgxb20163706.0662.
采用简便的化学腐蚀法在45℃下制备了橘红色荧光多孔硅(PS)
通过扫描电镜(SEM)、红外光谱(FT-IR)和比表面积(BET)对PS的结构进行了表征。研究发现
Ag
+
能在PS上发生氧化沉积而猝灭荧光。基于此
建立了一种快速、灵敏检测Ag
+
的新方法。在优化实验条件下
Ag
+
浓度与PS的荧光强度在4.510
-8
~6.610
-7
mol/L范围内呈良好的线性关系
检测限为2.210
-8
mol/L
线性相关系数为0.9914。该方法用于水样中Ag
+
的检测
结果满意。
A facile preparation of orange fluorescent porous silicon (PS) was reported using a simple chemical etching method at 45 ℃. The prepared PS samples were characterized by scanning electron microscope(SEM)
Fourier translation infrared spectrum(FT-IR) and specific surface area(BET). The results show that PS samples emit strong orange fluorescence possessing excellent photostability. Moreover
the fluorescence of PS can be effectively quenched by Ag
+
at room temperature.The fluorescence of PS shows a good linear relationship with the concentration of Ag
+
in the range of 4.510
-8
-6.610
-7
mol/L
the detection limit is 2.210
-8
mol/L
and the correlation coefficient is 0.991 4. The mechanism of Ag
+
-sensing in this method was further explained. Furthermore
the fluorescent Ag
+
sensor was applied to Ag
+
detection in environmental water samples
and satisfactory results were obtained.
化学腐蚀法多孔硅荧光Ag+
chemical etching methodporous siliconfluorescenceAg+
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