紫外激发Ba2SiO4:Gd3+,Tb3+的发光性能

肖林久; 耿艳丽; 谢颖; 姜新东; 崔永强; 汪书东

doi:10.3788/fgxb20163706.0644

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紫外激发Ba₂SiO₄:Gd³⁺,Tb³⁺的发光性能

材料合成及性能 | 更新时间：2020-08-12

- 紫外激发Ba₂SiO₄:Gd³⁺,Tb³⁺的发光性能
- Luminescence Properties of Ba₂SiO₄:Gd³⁺,Tb³⁺ Under UV Excitation
- 发光学报 2016年37卷第6期页码：644-649
- 作者机构：
  
  沈阳化工大学辽宁省稀土化学及应用重点实验室,辽宁沈阳,110142
- 作者简介：
- 基金信息：
  
  辽宁省教育厅科研项目(L2012149,L2015420)资助
- DOI：10.3788/fgxb20163706.0644
  中图分类号： O482.31
- 纸质出版日期：2016-06-05，
  
  收稿日期：2016-02-03，
  
  修回日期：2016-03-13，
- 稿件说明：
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肖林久, 耿艳丽, 谢颖等. 紫外激发Ba2SiO4:Gd3+,Tb3+的发光性能[J]. 发光学报, 2016,37(6): 644-649

XIAO Lin-jiu, GENG Yan-li, XIE Ying etc. Luminescence Properties of Ba2SiO4:Gd3+,Tb3+ Under UV Excitation[J]. Chinese Journal of Luminescence, 2016,37(6): 644-649
肖林久, 耿艳丽, 谢颖等. 紫外激发Ba2SiO4:Gd3+,Tb3+的发光性能[J]. 发光学报, 2016,37(6): 644-649 DOI： 10.3788/fgxb20163706.0644.

XIAO Lin-jiu, GENG Yan-li, XIE Ying etc. Luminescence Properties of Ba2SiO4:Gd3+,Tb3+ Under UV Excitation[J]. Chinese Journal of Luminescence, 2016,37(6): 644-649 DOI： 10.3788/fgxb20163706.0644.

摘要

采用高温固相法合成了可被紫外光激发的Ba

SiO

:Gd

荧光粉。考察了激活离子掺杂量等因素对发光性能的影响。通过X射线衍射(XRD)、荧光(FL)光谱和荧光寿命曲线对所合成样品的结构和发光性能进行表征

研究了Gd

和Tb

的特征吸收波长激发Ba

SiO

:Gd

的发光性能。在275nm(Gd

7/2

)激发下

检测到了Tb

的特征发射。通过对比不同Tb

掺杂量下Gd

7/2

能级的衰减曲线

发现随着Tb

掺杂浓度的增加

该能级的荧光寿命不断缩短

表明样品中存在Gd

的能量传递

传递方式为无辐射共振能量传递。在244nm(Tb

:4f

)激发下

的掺入使得Tb

的

能级的发射逐渐减弱

能级的发射增强。Gd

的掺入使得544nm(

)处的特征发射增强了59%~128%

结合荧光衰减曲线得出Gd

的掺入对Tb

能级中

与

交叉驰豫有促进作用。

Abstract

A series of Ba

SiO

:Gd

green phosphors were synthesized by solid state reaction. The influence of the factors such as the amount of ion doping on the luminescence properties was investigated. Their structure and luminescence properties were characterized by X-ray diffraction (XRD) analysis

fluorescence spectrometry (FL)

and decay curves. The spectroscopic properties of Ba

SiO

:Gd

under the excitation of the characteristic absorption wavelength of Gd

and Tb

were investigated. The emission of Tb

was observed under 275 nm(Gd

7/2

) excitation. By comparing Gd

7/2

energy decay curve with different Tb

doping amount

it is found that the level of fluorescence continuously shorten the service life with the increasing of Tb

concentration

indicating the occurrence of energy transfer from Gd

to Tb

with the mode of nonradiative resonance transfer. Under the excitation of 244 nm (Tb

: 4f

)

the emission intensity of

level decreases

but the

level increases with the doping of Gd

. The emission intensity at 544 nm (

) increases 59%~128% with the doping of Gd

. Combining with the fluorescence decay curves

it is found that the doping of Gd

can promote the cross relaxation of

and

in Tb

关键词

荧光粉能量传递交叉驰豫Ba2SiO4:Gd3+Tb3+

Keywords

phosphorsenergy transfercross relaxationBa2SiO4:Gd3+Tb3+

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