面向IGZO-TFT-AMOLED像素电路设计的VTH检测方法研究

王奥运; 胡照文; 陈蒙; 尹芊奕; 廖聪维; 邓联文

doi:10.3788/fgxb20163705.0608

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面向IGZO-TFT-AMOLED像素电路设计的V_TH检测方法研究

发光学应用及交叉前沿 | 更新时间：2020-08-12

- 面向IGZO-TFT-AMOLED像素电路设计的V_TH检测方法研究
- Investigation of V_TH Detection Methods for AMOLED Pixel Circuit Design with IGZO-TFT
- 发光学报 2016年37卷第5期页码：608-615
- 作者机构：
  
  中南大学物理与电子学院,湖南长沙,410083
- 作者简介：
- 基金信息：
  
  湖南省科技计划(2015JC3041)资助项目()
- DOI：10.3788/fgxb20163705.0608
  中图分类号： TN7
- 纸质出版日期：2016-5-5，
  
  收稿日期：2015-12-13，
  
  修回日期：2016-1-20，
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王奥运, 胡照文, 陈蒙等. 面向IGZO-TFT-AMOLED像素电路设计的VTH检测方法研究[J]. 发光学报, 2016,37(5): 608-615

WANG Ao-yun, HU Zhao-wen, CHEN Meng etc. Investigation of VTH Detection Methods for AMOLED Pixel Circuit Design with IGZO-TFT[J]. Chinese Journal of Luminescence, 2016,37(5): 608-615
王奥运, 胡照文, 陈蒙等. 面向IGZO-TFT-AMOLED像素电路设计的VTH检测方法研究[J]. 发光学报, 2016,37(5): 608-615 DOI： 10.3788/fgxb20163705.0608.

WANG Ao-yun, HU Zhao-wen, CHEN Meng etc. Investigation of VTH Detection Methods for AMOLED Pixel Circuit Design with IGZO-TFT[J]. Chinese Journal of Luminescence, 2016,37(5): 608-615 DOI： 10.3788/fgxb20163705.0608.

摘要

由于迁移率高、均匀性好、制备成本低等优势

铟镓锌氧化物薄膜晶体管(IGZO TFT)有望促成有源矩阵有机发光显示器件(AMOLED)的大规模量产。但是IGZO TFT存在阈值电压(

)漂移的问题

实用的AMOLED像素电路必须对

漂移进行补偿以实现较好的显示效果

而

的检测是AMOLED像素电路设计中的关键环节。本文系统研究了

检测方法

比较了放电法、充电法、偏置电流法补偿

的效果

研究了

检测时间和TFT寄生电容等参数的影响。研究结果表明:放电法不能精确地补偿负

漂移

充电法需要的

检测时间最长

偏置电流法能够达到的补偿精度最高。

Abstract

Due to the high mobility

excellent uniformity over large area and low manufacturing cost

indium gallium zinc oxide thin film transistor (IGZO TFT) is promising technology in promoting active matrix organic light emitting diode (AMOLED) into mass production. However

threshold voltage(

) shift of IGZO TFTs still exists

thus AMOLED pixel circuit is required to compensate

shift.

detection method is essential in AMOLED pixel circuit design. This paper reviews typical

detecting methods

namely the discharging method

charging method

and constant-current-biasing method. Simulations using Smart-Spiceare are carried out to compare the compensation efficiency. Also

the influences of

detection time and TFT parasitic capacitance on different

detecting methods are comprehensively analyzed. It is shown that the discharging method can not accurately compensate negative

shift

the charging method requires the longest

detection time

and the constant-current-biasing method has the highest compensation accuracy.

关键词

IGZOTFTAMOLED阈值电压补偿

Keywords

IGZOTFTAMOLEDthreshold voltage compensation

references

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