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1. 中国科学院大学 北京,100049
2. 中国科学院半导体研究所 半导体照明研发中心 北京,100083
3. 半导体照明联合创新国家重点实验室 北京,100083
4. 北京市第三代半导体材料及应用技术工程中心 北京,100083
纸质出版日期:2016-5-5,
收稿日期:2016-1-18,
修回日期:2016-3-3,
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赵勇兵, 张韵, 程哲等. 具有高开启/关断电流比的Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN金属氧化物半导体高电子迁移率晶体管[J]. 发光学报, 2016,37(5): 578-582
ZHAO Yong-bing, ZHANG Yun, CHENG Zhe etc. Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MOS-HEMT with High On/Off Drain Current Ratio[J]. Chinese Journal of Luminescence, 2016,37(5): 578-582
赵勇兵, 张韵, 程哲等. 具有高开启/关断电流比的Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN金属氧化物半导体高电子迁移率晶体管[J]. 发光学报, 2016,37(5): 578-582 DOI: 10.3788/fgxb20163705.0578.
ZHAO Yong-bing, ZHANG Yun, CHENG Zhe etc. Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MOS-HEMT with High On/Off Drain Current Ratio[J]. Chinese Journal of Luminescence, 2016,37(5): 578-582 DOI: 10.3788/fgxb20163705.0578.
采用原子层淀积(ALD)方法
制备了Al
2
O
3
为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT)。在栅压为-20 V时
MOS-HEMT的栅漏电比Schottky-gate HEMT的栅漏电低4个数量级以上。在栅压为+2 V时
Schottky-gate HEMT的栅漏电为191A;在栅压为+20 V时
MOS-HEMT的栅漏电仅为23.6 nA
比同样尺寸的Schottky-gate HEMT的栅漏电低将近7个数量级。AlGaN/GaN MOS-HEMT的栅压摆幅达到了20 V。在栅压
V
gs
=0 V时
MOS-HEMT的饱和电流密度达到了646 mA/mm
相比Schottky-gate HEMT的饱和电流密度(277 mA/mm)提高了133%。栅漏间距为10m的AlGaN/GaN MOS-HEMT器件在栅压为+3 V时的最大饱和输出电流达到680 mA/mm
特征导通电阻为1.47 mcm
2
。Schottky-gate HEMT的开启与关断电流比仅为10
5
MOS-HEMT的开启与关断电流比超过了10
9
超出了Schottky-gate HEMT器件4个数量级
原因是栅漏电的降低提高了MOS-HEMT的开启与关断电流比。在V
gs
=-14 V时
栅漏间距为10m的AlGaN/GaN MOS-HEMT的关断击穿电压为640 V
关断泄露电流为27A/mm。
This essay has reported the fabrication of a metal-oxide-semiconductor AlGaN/GaN high electron mobility transistor (MOS-HEMT) with an Al
2
O
3
insulator layer which was deposited by atomic layer deposition (ALD) as the gate dielectric. The MOS-HEMT with a gate-drain distance of 10m exhibits a drive current density of 680 mA/mm at a gate-source bias (
V
gs
) of +3 V and a specific on-resistance of 1.47 mcm
2
. Under a negative gate bias of -20 V
the gate leakage current of the MOS HEMT is over four orders of magnitude
which is lower than that of the Schottky-gate HEMT. The off-state breakdown voltage is 640 V at drain leakage current of 27A/mm with
V
gs
=-14 V. The Schottky-gate HEMT leakage current is 191A at the gate bias of +2 V and the MOS HEMT leakage current is as low as 23.6 nA at the gate bias of +20 V
which is approximately seven orders of magnitude lower than that of the Schottky-gate HEMT with similar gate dimensions. The on/off drain-current ratio (I
on
/I
off
) is over 10
9
for the MOS-HEMT.
AlGaN/GaN三氧化二铝高击穿电压金属氧化物半导体高电子迁移率晶体管
AlGaN/GaNAl2O3high breakdown voltageMOS-HEMT
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