具有高开启/关断电流比的Al2O3/AlGaN/GaN金属氧化物半导体高电子迁移率晶体管

赵勇兵; 张韵; 程哲; 黄宇亮; 张连; 刘志强; 伊晓燕; 王国宏; 李晋闽

doi:10.3788/fgxb20163705.0578

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具有高开启/关断电流比的Al₂O₃/AlGaN/GaN金属氧化物半导体高电子迁移率晶体管

器件制备及器件物理 | 更新时间：2020-08-12

- 具有高开启/关断电流比的Al₂O₃/AlGaN/GaN金属氧化物半导体高电子迁移率晶体管
- Al₂O₃/AlGaN/GaN MOS-HEMT with High On/Off Drain Current Ratio
- 发光学报 2016年37卷第5期页码：578-582
- 作者机构：
  
  1. 中国科学院大学北京,100049
  2. 中国科学院半导体研究所半导体照明研发中心北京,100083
  3. 半导体照明联合创新国家重点实验室北京,100083
  4. 北京市第三代半导体材料及应用技术工程中心北京,100083
- 作者简介：
- 基金信息：
  
  863国家高技术研究发展计划(2014AA032606)();国家自然科学基金(61376090)资助项目()
- DOI：10.3788/fgxb20163705.0578
  中图分类号： TN5;TN3;TN4
- 纸质出版日期：2016-5-5，
  
  收稿日期：2016-1-18，
  
  修回日期：2016-3-3，
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赵勇兵, 张韵, 程哲等. 具有高开启/关断电流比的Al2O3/AlGaN/GaN金属氧化物半导体高电子迁移率晶体管[J]. 发光学报, 2016,37(5): 578-582

ZHAO Yong-bing, ZHANG Yun, CHENG Zhe etc. Al2O3/AlGaN/GaN MOS-HEMT with High On/Off Drain Current Ratio[J]. Chinese Journal of Luminescence, 2016,37(5): 578-582
赵勇兵, 张韵, 程哲等. 具有高开启/关断电流比的Al2O3/AlGaN/GaN金属氧化物半导体高电子迁移率晶体管[J]. 发光学报, 2016,37(5): 578-582 DOI： 10.3788/fgxb20163705.0578.

ZHAO Yong-bing, ZHANG Yun, CHENG Zhe etc. Al2O3/AlGaN/GaN MOS-HEMT with High On/Off Drain Current Ratio[J]. Chinese Journal of Luminescence, 2016,37(5): 578-582 DOI： 10.3788/fgxb20163705.0578.

摘要

采用原子层淀积(ALD)方法

制备了Al

为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT)。在栅压为-20 V时

MOS-HEMT的栅漏电比Schottky-gate HEMT的栅漏电低4个数量级以上。在栅压为+2 V时

Schottky-gate HEMT的栅漏电为191A;在栅压为+20 V时

MOS-HEMT的栅漏电仅为23.6 nA

比同样尺寸的Schottky-gate HEMT的栅漏电低将近7个数量级。AlGaN/GaN MOS-HEMT的栅压摆幅达到了20 V。在栅压

=0 V时

MOS-HEMT的饱和电流密度达到了646 mA/mm

相比Schottky-gate HEMT的饱和电流密度(277 mA/mm)提高了133%。栅漏间距为10m的AlGaN/GaN MOS-HEMT器件在栅压为+3 V时的最大饱和输出电流达到680 mA/mm

特征导通电阻为1.47 mcm

。Schottky-gate HEMT的开启与关断电流比仅为10

MOS-HEMT的开启与关断电流比超过了10

超出了Schottky-gate HEMT器件4个数量级

原因是栅漏电的降低提高了MOS-HEMT的开启与关断电流比。在V

=-14 V时

栅漏间距为10m的AlGaN/GaN MOS-HEMT的关断击穿电压为640 V

关断泄露电流为27A/mm。

Abstract

This essay has reported the fabrication of a metal-oxide-semiconductor AlGaN/GaN high electron mobility transistor (MOS-HEMT) with an Al

insulator layer which was deposited by atomic layer deposition (ALD) as the gate dielectric. The MOS-HEMT with a gate-drain distance of 10m exhibits a drive current density of 680 mA/mm at a gate-source bias (

) of +3 V and a specific on-resistance of 1.47 mcm

. Under a negative gate bias of -20 V

the gate leakage current of the MOS HEMT is over four orders of magnitude

which is lower than that of the Schottky-gate HEMT. The off-state breakdown voltage is 640 V at drain leakage current of 27A/mm with

=-14 V. The Schottky-gate HEMT leakage current is 191A at the gate bias of +2 V and the MOS HEMT leakage current is as low as 23.6 nA at the gate bias of +20 V

which is approximately seven orders of magnitude lower than that of the Schottky-gate HEMT with similar gate dimensions. The on/off drain-current ratio (I

off

) is over 10

for the MOS-HEMT.

关键词

AlGaN/GaN三氧化二铝高击穿电压金属氧化物半导体高电子迁移率晶体管

Keywords

AlGaN/GaNAl2O3high breakdown voltageMOS-HEMT

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