高功率半导体激光器陶瓷封装散热性能研究

倪羽茜; 井红旗; 孔金霞; 祁琼; 刘素平; 马骁宇

doi:10.3788/fgxb20163705.0561

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高功率半导体激光器陶瓷封装散热性能研究

器件制备及器件物理 | 更新时间：2020-08-12

- 高功率半导体激光器陶瓷封装散热性能研究
- Thermal Performance of High-power Semiconductor Laser Packaged by Ceramic Submount
- 发光学报 2016年37卷第5期页码：561-566
- 作者机构：
  
  中国科学院半导体研究所光电子器件国家工程研究中心北京,100083
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61306057)资助项目()
- DOI：10.3788/fgxb20163705.0561
  中图分类号： TN248.4
- 纸质出版日期：2016-5-5，
  
  收稿日期：2016-1-21，
  
  修回日期：2016-3-7，
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倪羽茜, 井红旗, 孔金霞等. 高功率半导体激光器陶瓷封装散热性能研究[J]. 发光学报, 2016,37(5): 561-566

NI Yu-xi, JING Hong-qi, KONG Jin-xia etc. Thermal Performance of High-power Semiconductor Laser Packaged by Ceramic Submount[J]. Chinese Journal of Luminescence, 2016,37(5): 561-566
倪羽茜, 井红旗, 孔金霞等. 高功率半导体激光器陶瓷封装散热性能研究[J]. 发光学报, 2016,37(5): 561-566 DOI： 10.3788/fgxb20163705.0561.

NI Yu-xi, JING Hong-qi, KONG Jin-xia etc. Thermal Performance of High-power Semiconductor Laser Packaged by Ceramic Submount[J]. Chinese Journal of Luminescence, 2016,37(5): 561-566 DOI： 10.3788/fgxb20163705.0561.

摘要

为实现半导体激光器单管的高功率输出

研究了使用氮化铝和碳化硅两种陶瓷材料制成的三明治型过渡热沉的散热性能。首先使用有限元分析方法计算

然后利用光谱法测量激光器的工作热阻。数值计算和实验测量结果均显示

碳化硅制成的过渡热沉所封装器件的工作热阻更低

散热效果更好。此外

实验进一步测试了器件的光电特性

结果表明碳化硅陶瓷制成的过渡热沉封装器件的电光转换效率更高、输出功率更大。915 nm附近单管器件在注入电流15 A时的输出功率为16.3 W

最高电光转换效率达到了68.3%。

Abstract

In order to achieve higher output power of laser-diodes single emitter

thermal performance of sandwiched submounts based on aluminum nitride and silicon carbide was investigated. The thermal resistance of devices was first calculated by finite element method numerically

and then tested by spectral method experimentally. Both the stimulated results and the experimental data show that the thermal resistance of devices packaged by SiC submounts is less than the AlN submounts

which means better heat dissipation capability of SiC submounts. In addition

optical characteristics of the devices were further tested. It is showed that higher output power and higher electro-optical conversion efficiency are achieved by the devices packaged by the SiC-sandwiched submounts. The output power of single emitter achieves 16.3 W at the injected current of 15 A around 915 nm. The peak electro-optical conversion efficiency reaches 68.3%

leading the domestic level.

关键词

高功率半导体激光器有限元分析热阻

Keywords

high-power laser diodefinite element analysisthermal resistance

references

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SZYMAN'SKI M, KOZLOWSKA A, MALAG A, et al.. Two-dimensional model of heat flow in broad-area laser diode mounted to a non-ideal heat sink[J]. J. Phys. D:Appl. Phys., 2007, 40(3):924-929.

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王胜楠,薄报学,许留洋,等. 基于腔面非注入区的半导体激光器的热特性分析[J]. 发光学报, 2014, 35(8):969-973. WANG S N, BO B X, XU L Y, et al.. Thermal analysis on semiconductor laser with non-injection region[J]. Chin. J. Lumin., 2014, 35(8):969-973. (in Chinese)

SZYMANSKI M, ZBROSZCZYK M, MROZIEWICZ B. The influence of different heat sources on temperature distributions in broad-area diode lasers[C]. Proceedings of SPIE 5582, Advanced Optoelectronics and Lasers, San Francisco, USA, 2004:5582.

VIKHRENKO V. Heat Transfer-Engineering Applications[M]. Rijeka:Intech, 2011.

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