Sulfur-plasma process was proposed to clean and passivate the surface of (100) oriented GaAs wafers for stable sulfur passivation effect. The photoluminescence (PL) intensity of processed samples with sulfur-plasma had an obvious improvement after 360℃ annealing
and 71% higher than the unpassivated sample. The stability of passivation was also tested. There was no obvious PL intensity degradation while the sample stored in open air over a month. The experiment results show that the passivation of GaAs surface treated by sulfur-plasma process has good stability.
关键词
射频等离子体光致发光钝化GaAs
Keywords
RF plasmaPLpassivationGaAs
references
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