退火温度对非晶铟钨氧薄膜晶体管特性的影响

许玲; 吴崎; 董承远

doi:10.3788/fgxb20163704.0457

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退火温度对非晶铟钨氧薄膜晶体管特性的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 退火温度对非晶铟钨氧薄膜晶体管特性的影响
- Effect of Annealing Temperature on Performance of Amorphous InWO Thin Film Transistors
- 发光学报 2016年37卷第4期页码：457-462
- 作者机构：
  
  上海交通大学电子工程系上海,200240
- 作者简介：
- 基金信息：
  
  国家自然科学基金面上项目(61474075)();国家自然科学基金重点项目(61136004)资助()
- DOI：10.3788/fgxb20163704.0457
  中图分类号： TN321+.5
- 纸质出版日期：2016-4-5，
  
  收稿日期：2015-12-21，
  
  修回日期：2016-1-18，
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许玲, 吴崎, 董承远. 退火温度对非晶铟钨氧薄膜晶体管特性的影响[J]. 发光学报, 2016,37(4): 457-462

XU Ling, WU Qi, DONG Cheng-yuan. Effect of Annealing Temperature on Performance of Amorphous InWO Thin Film Transistors[J]. Chinese Journal of Luminescence, 2016,37(4): 457-462
许玲, 吴崎, 董承远. 退火温度对非晶铟钨氧薄膜晶体管特性的影响[J]. 发光学报, 2016,37(4): 457-462 DOI： 10.3788/fgxb20163704.0457.

XU Ling, WU Qi, DONG Cheng-yuan. Effect of Annealing Temperature on Performance of Amorphous InWO Thin Film Transistors[J]. Chinese Journal of Luminescence, 2016,37(4): 457-462 DOI： 10.3788/fgxb20163704.0457.

摘要

非晶铟钨氧(a-IWO)薄膜晶体管(TFT)具有高迁移率和高稳定性的优点

但其适合于实际生产的制备工艺条件尚有待摸索。本文研究了退火温度对a-IWO TFT电学特性影响的基本规律和内部机理。实验结果表明

随着退火温度的升高

a-IWO TFT的场效应迁移率也相应增加

这是由于高温退火下a-IWO薄膜中氧空位含量增多并进而导致载流子浓度增加的缘故。此外

a-IWO TFT的亚阈值摆幅和阈值电压在200 ℃下退火达到最佳

我们认为主要原因在于此时a-IWO薄膜的表面粗糙度最小并形成了最佳的前沟道界面状态。

Abstract

Amorphous indium tungsten oxide (a-IWO) thin film transistors (TFTs) show superior electrical performance and stable properties

but their industrial fabrication methods still need to be developed. In this study

the effect of annealing temperature on the electrical performance of a-IWO TFTs was investigated

where the related basic dependence and physical essence were involved. The experimental results indicate that the field-effect mobility of a-IWO TFTs increases gradually with the annealing temperature increasing

due to the more oxygen vacancies as well as the larger carrier concentration at higher annealing temperatures. Meanwhile

annealing at 200 ℃ led to the best subthreshold swing and threshold voltage of a-IWO TFTs

as is assumed to mainly result from the best front-channel interface caused by the smallest roughness of the a-IWO films annealed at 200 ℃.

关键词

非晶铟钨氧薄膜晶体管退火温度氧空位表面粗糙度

Keywords

amorphous indium tungsten oxidethin film transistorsannealing temperatureoxygen vacanciesroughness

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