XU Liu-yang, GAO Xin, YUAN Xu-ze etc. Nitrogen-plasma Passivation of GaAs Semiconductor Surface[J]. Chinese Journal of Luminescence, 2016,37(4): 428-431
GaAs样品表面的氮化效果随着氮等离子体功率的增加而逐渐趋于明显。氮化后的样品表面未发现氧化物残余。样品在空气中加热放置30 d
PL强度下降不明显
说明表面钝化层具有良好的稳定性。
Abstract
GaAs substrate was treated by N
+
with 150 W RF plasma and followed by rapid thermal annealing. The PL intensity increased by 91%. XPS analysis indicates that GaAs surface has been nitrided after high power RF N
+
plasma processing
and the nitridation effect is enhanced under higher RF power. No oxide is found on nitrided GaAs surface. The prepared samples were kept on heat plate in open air for PL stability evaluation
little drop was found during a 30 days test.
关键词
等离子XPSPLGaAs
Keywords
plasmaXPSPLGaAs
references
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