GaAs半导体表面的等离子氮钝化特性研究

许留洋; 高欣; 袁绪泽; 夏晓宇; 曹曦文; 乔忠良; 薄报学

doi:10.3788/fgxb20163704.0428

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GaAs半导体表面的等离子氮钝化特性研究

器件制备及器件物理 | 更新时间：2020-08-12

- GaAs半导体表面的等离子氮钝化特性研究
- Nitrogen-plasma Passivation of GaAs Semiconductor Surface
- 发光学报 2016年37卷第4期页码：428-431
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61176048,61177019,61308051)();吉林省科技发展计划(20150203007GX,20130206016GX)();中物院高
- DOI：10.3788/fgxb20163704.0428
  中图分类号： TN248.4
- 纸质出版日期：2016-4-5，
  
  收稿日期：2016-1-7，
  
  修回日期：2016-3-3，
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许留洋, 高欣, 袁绪泽等. GaAs半导体表面的等离子氮钝化特性研究[J]. 发光学报, 2016,37(4): 428-431

XU Liu-yang, GAO Xin, YUAN Xu-ze etc. Nitrogen-plasma Passivation of GaAs Semiconductor Surface[J]. Chinese Journal of Luminescence, 2016,37(4): 428-431
许留洋, 高欣, 袁绪泽等. GaAs半导体表面的等离子氮钝化特性研究[J]. 发光学报, 2016,37(4): 428-431 DOI： 10.3788/fgxb20163704.0428.

XU Liu-yang, GAO Xin, YUAN Xu-ze etc. Nitrogen-plasma Passivation of GaAs Semiconductor Surface[J]. Chinese Journal of Luminescence, 2016,37(4): 428-431 DOI： 10.3788/fgxb20163704.0428.

摘要

采用射频(RF)等离子方法

对GaAs样品进行了150 W高功率等离子氮钝化及快速退火处理。经过该方法钝化后的样品

光致发光(PL)强度上升了91%。XPS分析得出

GaAs样品表面的氮化效果随着氮等离子体功率的增加而逐渐趋于明显。氮化后的样品表面未发现氧化物残余。样品在空气中加热放置30 d

PL强度下降不明显

说明表面钝化层具有良好的稳定性。

Abstract

GaAs substrate was treated by N

with 150 W RF plasma and followed by rapid thermal annealing. The PL intensity increased by 91%. XPS analysis indicates that GaAs surface has been nitrided after high power RF N

plasma processing

and the nitridation effect is enhanced under higher RF power. No oxide is found on nitrided GaAs surface. The prepared samples were kept on heat plate in open air for PL stability evaluation

little drop was found during a 30 days test.

关键词

等离子XPSPLGaAs

Keywords

plasmaXPSPLGaAs

references

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HARA A, NAKAMURA R, IKOMA H. Nitridation of GaAs using helicon-wave excited and inductively coupled nitrogen plasma [J]. J. Vac. Sci. Technol. B, 1998, 16(1):183-191.

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