热容型大功率半导体激光器瞬态热特性

贾冠男; 尧舜; 高祥宇; 兰天; 邱运涛; 王智勇

doi:10.3788/fgxb20163704.0422

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热容型大功率半导体激光器瞬态热特性

器件制备及器件物理 | 更新时间：2020-08-12

- 热容型大功率半导体激光器瞬态热特性
- Transient Thermal Characteristics of Heat Capacity High Power Diode Lasers
- 发光学报 2016年37卷第4期页码：422-427
- 作者机构：
  
  北京工业大学激光工程研究院北京,100124
- 作者简介：
- 基金信息：
  
  北京市委组织部优秀人才培养计划(2012D005015000005)();北京市教委项目(KM201110005017)资助()
- DOI：10.3788/fgxb20163704.0422
  中图分类号： TN248.4
- 纸质出版日期：2016-4-5，
  
  收稿日期：2015-12-24，
  
  修回日期：2016-1-17，
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贾冠男, 尧舜, 高祥宇等. 热容型大功率半导体激光器瞬态热特性[J]. 发光学报, 2016,37(4): 422-427

JIA Guan-nan, YAO Shun, GAO Xiang-yu etc. Transient Thermal Characteristics of Heat Capacity High Power Diode Lasers[J]. Chinese Journal of Luminescence, 2016,37(4): 422-427
贾冠男, 尧舜, 高祥宇等. 热容型大功率半导体激光器瞬态热特性[J]. 发光学报, 2016,37(4): 422-427 DOI： 10.3788/fgxb20163704.0422.

JIA Guan-nan, YAO Shun, GAO Xiang-yu etc. Transient Thermal Characteristics of Heat Capacity High Power Diode Lasers[J]. Chinese Journal of Luminescence, 2016,37(4): 422-427 DOI： 10.3788/fgxb20163704.0422.

摘要

为研究热容型大功率半导体激光器在低环境温度、高瞬时功率、长工作间歇时间条件下的应用

建立三维瞬态热传导模型

通过有限元法计算得出热沉三维尺寸对半导体激光器瞬态热特性的影响。选取尺寸为26.6 mm11.5 mm4 mm的热沉进行热容型半导体激光器的封装测试

获得其在-20 ℃和-30 ℃环境温度下连续工作3.5 s过程中有源区温度随时间的变化曲线

并与数值计算的结果进行对比。结果表明

两者在误差范围内能够很好地吻合。

Abstract

To investigate the application of heat capacity high power diode lasers under the condition of low temperature

high transient power and long interval working time

a 3-D transient thermal model was established. By adopting the finite element analysis

the effect of 3-D sizes of the heat sink on the transient thermal characteristics of diode laser was calculated successfully. According to the simulation results

the heat sink with dimension of 26.6 mm11.5 mm4 mm was chosen to package the heat capacity diode laser

and the experiments of the diode laser working 3.5 s continuously under -20 ℃ and -30 ℃ were carried out respectively. Eventually

the temperature curves of the active region were obtained and demonstrated a good consistence with the simulation results.

关键词

激光器半导体激光器热容型瞬态热特性

Keywords

laserdiode laserheat capacitytransient thermal characteristic

references

王立军,宁永强,秦莉,等. 大功率半导体激光器研究进展 [J]. 发光学报, 2015, 36(1):1-19. WANG L J, NING Y Q, QIN L, et al.. Development of high power diode laser [J]. Chin. J. Lumin., 2015, 36(1):1-19. (in Chinese)

TIMMERMANN A, MEINSCHIEN J, BRUNS P, et al.. Next generation high-brightness diode lasers offer new industrial applications [J]. SPIE, 2008, 6876:68760U.

马骁宇,王俊,刘素平. 国内大功率半导体激光器研究及应用现状 [J]. 红外与激光工程, 2008, 37(2):189-194. MA X Y, WANG J, LIU S P. Present situation of investigations and applications in high power semiconductor lasers [J]. Infrared Laser Eng., 2008, 37(2):189-194. (in Chinese)

WU M C, OLSSON N A, SIVCO D, et al.. A 970 nm strained-layer InGaAs/GaAlAs quantum well laser for pumping an erbium-doped optical fiber amplifier [J]. Appl. Phys. Lett., 1990, 56(3):221-223.

武斌,李毅,胡双双,等. 非制冷980 nm半导体激光器封装设计与热特性分析 [J]. 中国激光, 2009, 36(4):799-803. WU B, LI Y, HU S S, et al.. Design and thermal characteristics analysis of uncooled 980 nm semiconductor laser packaging [J]. Chin. J. Lasers, 2009, 36(4):799-803. (in Chinese)

王文,高欣,周泽鹏,等. 百瓦级多芯片半导体激光器稳态热分析 [J]. 红外与激光工程, 2014, 43(5):1438-1443. WANG W, GAO X, ZHOU Z P, et al.. Steady-state thermal analysis of hundred-watt semiconductor laser with multichip-packaging [J]. Infrared Laser Eng., 2014, 43(5):1438-1443. (in Chinese)

ROSSIN V, PETER M, ZUCKER E, et al.. Highly reliable high-power broad area laser diodes [J]. SPIE, 2006, 6104:610-407.

WITZIGMANN B, HYBERTSEN M S. A theoretical investigation of the characteristic temperature T0 for semiconductor lasers [J]. IEEE J. Sel. Top. Quant. Electron., 2003, 9(3):807-815.

KOBAYASHI T, FURUKAWA Y. Temperature distributions in the GaAs-AlGaAs double-heterostructure laser below and above the threshold current [J]. Jpn. J. Appl. Phys., 1975, 14(12):1981-1986.

王祥鹏,梁雪梅,李再金,等. 880 nm半导体激光器列阵及光纤耦合模块[J]. 光学精密工程, 2010, 18(5):1021-1027. WANG X P, LIANG X M, LI Z J, et al.. 880 nm semiconductor laser diode arrays and fiber coupling module [J]. Opt. Precision Eng., 2010, 18(5):1021-1027. (in Chinese)

CHIN A K, NELSON A, CHIN R H, et al.. Copper-based micro-channel cooler reliably operated using solutions of distilled-water and ethanol as a coolant [J]. SPIE, 2015, 9348:93480Y.

张志军,刘云,付喜宏,等. 激光二极管合束模块整体散热热阻分析 [J]. 中国激光, 2012, 39(4):0402010-1-5. ZHANG Z J, LIU Y, FU X H, et al.. Analysis on overall thermal resistance of laser diode beam combined modules [J]. Chin. J. Lasers, 2012, 39(4):0402010-1-5. (in Chinese)

VAN DER ZIEL J P, Chand N. High-temperature operation (to 180 ℃) of 0.98 m strained single quantum well In0.2Ga0.8As/GaAs lasers [J]. Appl. Phys. Lett., 1991, 58(13):1437-1439.

鲁鹏程,崔碧峰,李建军,等. 隧道再生大功率半导体激光器瞬态热特性研究 [J]. 中国激光, 2004, 31(5):518-522. LU P C, CUI B F, LI J J, et al.. Transient thermal characteristic analysis of tunnel regeneration high-power semiconductor laser [J]. Chin. J. Lasers, 2004, 31(5):518-522. (in Chinese)

张建伟,宁永强,张星,等. 基于载流子注入产热机制的半导体激光器热模型分析 [J]. 中国激光, 2012, 39(10):1002003-1-8. ZHANG J W, NING Y Q, ZHANG X, et al.. Analysis of thermal model based on the carrier injection mechanisms within the semiconductor laser [J]. Chin. J. Lasers, 2012, 39(10):1002003-1-8. (in Chinese)

张晓波,高鼎三. InP/InGaAsP条形半导体激光器中的瞬态温度特性理论计算 [J]. 半导体学报, 1989, 10(5):362-367. ZHANG X B, GAO D S. Transient thermal effects calculation in InP/InGaAsP stripe geometry semiconductor laser diode [J]. Chin. J. Semiconduct., 1989, 10(5):362-367. (in Chinese)

袁振邦,王警卫,吴迪,等. 大功率半导体激光器阵列的稳态和瞬态热行为 [J]. 中国激光, 2009, 36(8):1957-1962. YUAN Z B, WANG J W, WU D, et al.. Static and transient thermal behavior of high power semiconductor lasers [J]. Chin. J. Lasers, 2009, 36(8):1957-1962. (in Chinese)

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