GaN基垂直结构LED的n型电极结构设计及芯片制备

刘丽; 胡晓龙; 王洪

doi:10.3788/fgxb20163703.0338

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GaN基垂直结构LED的n型电极结构设计及芯片制备

器件制备及器件物理 | 更新时间：2020-08-12

- GaN基垂直结构LED的n型电极结构设计及芯片制备
- n-type Electrode Patterns Design and Device Fabrication of GaN-based Vertical Structure LEDs
- 发光学报 2016年37卷第3期页码：338-345
- 作者机构：
  
  华南理工大学广东省光电工程技术研究中心, 物理与光电学院,广东广州,510640
- 作者简介：
- 基金信息：
  
  国家高技术研究发展计划(863 计划) (2014AA032609)();国家自然科学基金(61404050)();广东省战略性新兴产业专项资金(2012A080302
- DOI：10.3788/fgxb20163703.0338
  中图分类号： TN383+.1
- 纸质出版日期：2016-3-5，
  
  收稿日期：2015-11-16，
  
  修回日期：2015-12-15，
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刘丽, 胡晓龙, 王洪. GaN基垂直结构LED的n型电极结构设计及芯片制备[J]. 发光学报, 2016,37(3): 338-345

LIU Li, HU Xiao-long, WANG Hong. n-type Electrode Patterns Design and Device Fabrication of GaN-based Vertical Structure LEDs[J]. Chinese Journal of Luminescence, 2016,37(3): 338-345
刘丽, 胡晓龙, 王洪. GaN基垂直结构LED的n型电极结构设计及芯片制备[J]. 发光学报, 2016,37(3): 338-345 DOI： 10.3788/fgxb20163703.0338.

LIU Li, HU Xiao-long, WANG Hong. n-type Electrode Patterns Design and Device Fabrication of GaN-based Vertical Structure LEDs[J]. Chinese Journal of Luminescence, 2016,37(3): 338-345 DOI： 10.3788/fgxb20163703.0338.

摘要

首先利用电流路径模型分析n型电极尺寸及间距等对垂直结构发光二极管(VS-LEDs)电流分布均匀性的影响

依此设计出一种螺旋状环形结构电极。其次

通过建立有限元分析软件Comsol仿真模型模拟VS-LEDs有源层的电流密度分布

发现螺旋状环形结构电极的环间距越小

电流密度分布越均匀。最后

利用VS-LEDs芯片制备技术实现具有螺旋状环形电极的垂直结构LED芯片。实验结果显示

在350 mA电流驱动下

电极环间距为146.25 m的芯片具有最大的功能转换效率

达到26.8%。

Abstract

The influences of size and spacing of n-type electrode on the current distribution of vertical-structure light-emitting diodes (VS-LEDs) were firstly analyzed by two-dimension circuit modeling

and annulospiral n-type electrodes were proposed for the fabrication of VS-LEDs. Then

finite element analysis model in Comsol Multiphysics was built to study the current density distribution in the active layer of VS-LEDs with the annulospiral electrodes. It is found that the current density distribution became more uniform when the electrode spacing reduced. Finally

VS-LEDs with various annulospiral electrodes were fabricated using high-reflectivity p-type Ohmic electrode

copper substrate electroplating and laser lift-off techniques. The wall plug efficiency of VS-LEDs with the electrode spacing of 146.25 m is 26.8% at 350 mA

which is higher than that of VS-LEDs with other electrode spacings.

关键词

氮化镓垂直结构发光二极管电流分布螺旋状环形结构电极

Keywords

GaNvertical-structure light-emitting diodes(VS-LEDs)current distributionannulospiral electrode

references

LI C K, WU Y R. Study on the current spreading effect and light extraction enhancement of vertical GaN/InGaN LEDs [J]. IEEE Trans. Electron Devices, 2012, 59(2):400-407.

CHANG L M, CHANG S J, JIAO Z Y, et al.. Enhanced current spreading for GaN-based side-view LEDs by adding an metallic stripe across the long side of the chip [J]. IEEE Photon. Technol. Lett., 2012, 24(16):1412-1414.

HORNG R H, CHUANG S H, TIEN C H, et al.. High performance GaN-based flip-chip LEDs with different electrode patterns [J]. Opt. Express, 2014, 22(S3):A941-A946.

潘华璞,黄利伟,李睿,等. GaN基LED电流扩展的有限元模型及电极结构优化 [J]. 发光学报, 2007, 28(1):114-120. PAN H P, HUANG L W, LI R, et al.. Finite element model of GaN-based LED and the optimization of the mesa structure [J]. Chin. J. Lumin., 2007, 28(1):114-120. (in Chinese)

LIU H H, CHEN P R, LEE G Y, et al.. Efficiency enhancement of InGaN LEDs with an n-type AlGaN/GaN/InGaN current spreading layer [J]. IEEE Electr. Device Lett., 2011, 32(10):1409-1411.

LIU W J, HU X L, ZHANG J Y, et al.. Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes [J]. Opt. Mater., 2012, 34(8):1327-1329.

TSAI Y J, LIN R C, HU H L, et al.. Novel electrode design for integrated thin-film GaN LED package with efficiency improvement [J]. IEEE Photon. Technol. Lett., 2013, 25(6):609-611.

TIAN T, WANG L C, GUO E Q, et al.. Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage (2.75 V@350 mA,>95%) [J]. J. Phys. D, 2014, 47(11):115102.

LI C K, WU Y R. Current spreading effect in vertical GaN/InGaN LEDs [J]. SPIE, 2011, 7939:79392K.

WANG S J, CHEN S L, UANG K M, et al.. The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes [J]. IEEE Photon. Technol. Lett., 2006, 18(10):1146-1148.

CHEN T M, WANG S J, UANG K M, et al.. Current spreading and blocking designs for improving light output power from the vertical-structured GaN-based light-emitting diodes [J]. IEEE Photon. Technol. Lett., 2008, 20(9):703-705.

TU S H, CHEN J C, HWU F S, et al.. Characteristics of current distribution by designed electrode patterns for high power Thin GaN LED [J]. Solid-State Electron., 2010, 54(11):1438-1443.

KIM H, KIM K K, CHOI K K, et al.. Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry [J]. Appl. Phys. Lett., 2007, 91(2):023510-1-3.

CHU J T, KAO C C, HUANG H W, et al.. Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off [J]. Jpn. J. Appl. Phys., 2005, 44(11):7910-7912.

KIM D W, LEE H Y, YEOM G Y, et al.. A study of transparent contact to vertical GaN-based light-emitting diodes [J]. J. Appl. Phys., 2005, 98(5):053102-1-4.

钟广明,杜晓晴,唐杰灵,等. 影响倒装焊LED芯片电流分布均匀性的因素分析 [J]. 物理学报, 2012, 61(12):127803-1-9. ZHONG G M, DU X Q, TANG J L, et al.. Analysis of influencing factors on current spreading of flip-chip light-emitting diodes (LEDs) [J]. Acta Phys. Sinica, 2012, 61(12):127803-1-9. (in Chinese)

HU X L, LIU L, WANG H, et al.. Effects of pre-annealed ITO film on the electrical characteristics of high-reflectance Ni/Ag/Ni/Au contacts to p-type GaN [J]. Appl. Surf. Sci., 2015, 357:1703-1707.

KUMAR S, SINGH S, LUNIA A K, et al.. Optimization of n-electrode pattern for p-side down vertical InGaN/GaN blue light emitting diodes [J]. Phys. Stat. Sol., 2014, 211(9):2134-2141.

LUO Z S, CHO Y, LORYUENYONG V, et al.. Enhancement of (In, Ga) N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon [J]. IEEE Photon. Technol. Lett., 2002, 14(10):1400-1402.

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