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华南理工大学 广东省光电工程技术研究中心, 物理与光电学院,广东 广州,510640
纸质出版日期:2016-3-5,
收稿日期:2015-11-16,
修回日期:2015-12-15,
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刘丽, 胡晓龙, 王洪. GaN基垂直结构LED的n型电极结构设计及芯片制备[J]. 发光学报, 2016,37(3): 338-345
LIU Li, HU Xiao-long, WANG Hong. n-type Electrode Patterns Design and Device Fabrication of GaN-based Vertical Structure LEDs[J]. Chinese Journal of Luminescence, 2016,37(3): 338-345
刘丽, 胡晓龙, 王洪. GaN基垂直结构LED的n型电极结构设计及芯片制备[J]. 发光学报, 2016,37(3): 338-345 DOI: 10.3788/fgxb20163703.0338.
LIU Li, HU Xiao-long, WANG Hong. n-type Electrode Patterns Design and Device Fabrication of GaN-based Vertical Structure LEDs[J]. Chinese Journal of Luminescence, 2016,37(3): 338-345 DOI: 10.3788/fgxb20163703.0338.
首先利用电流路径模型分析n型电极尺寸及间距等对垂直结构发光二极管(VS-LEDs)电流分布均匀性的影响
依此设计出一种螺旋状环形结构电极。其次
通过建立有限元分析软件Comsol仿真模型模拟VS-LEDs有源层的电流密度分布
发现螺旋状环形结构电极的环间距越小
电流密度分布越均匀。最后
利用VS-LEDs芯片制备技术实现具有螺旋状环形电极的垂直结构LED芯片。实验结果显示
在350 mA电流驱动下
电极环间距为146.25 m的芯片具有最大的功能转换效率
达到26.8%。
The influences of size and spacing of n-type electrode on the current distribution of vertical-structure light-emitting diodes (VS-LEDs) were firstly analyzed by two-dimension circuit modeling
and annulospiral n-type electrodes were proposed for the fabrication of VS-LEDs. Then
finite element analysis model in Comsol Multiphysics was built to study the current density distribution in the active layer of VS-LEDs with the annulospiral electrodes. It is found that the current density distribution became more uniform when the electrode spacing reduced. Finally
VS-LEDs with various annulospiral electrodes were fabricated using high-reflectivity p-type Ohmic electrode
copper substrate electroplating and laser lift-off techniques. The wall plug efficiency of VS-LEDs with the electrode spacing of 146.25 m is 26.8% at 350 mA
which is higher than that of VS-LEDs with other electrode spacings.
氮化镓垂直结构发光二极管电流分布螺旋状环形结构电极
GaNvertical-structure light-emitting diodes(VS-LEDs)current distributionannulospiral electrode
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