温度对4管像素结构CMOS图像传感器性能参数的影响

王帆; 李豫东; 郭旗; 汪波; 张兴尧

doi:10.3788/fgxb20163703.0332

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温度对4管像素结构CMOS图像传感器性能参数的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 温度对4管像素结构CMOS图像传感器性能参数的影响
- Temperature Effects on Performance Parameters in 4T CMOS Image Sensor
- 发光学报 2016年37卷第3期页码：332-337
- 作者机构：
  
  1. 中国科学院大学北京,100049
  2. 中国科学院特殊环境功能材料与器件重点实验室, 新疆电子信息材料与器件重点实验室, 中国科学院新疆理化技术研究所,新疆乌鲁木齐,830011
- 作者简介：
- 基金信息：
  
  国家自然科学基金(11005152)资助项目()
- DOI：10.3788/fgxb20163703.0332
  中图分类号： TP394.1;TH691.9
- 纸质出版日期：2016-3-5，
  
  收稿日期：2015-11-18，
  
  修回日期：2015-12-14，
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王帆, 李豫东, 郭旗等. 温度对4管像素结构CMOS图像传感器性能参数的影响[J]. 发光学报, 2016,37(3): 332-337

WANG Fan, LI Yu-dong, GUO Qi etc. Temperature Effects on Performance Parameters in 4T CMOS Image Sensor[J]. Chinese Journal of Luminescence, 2016,37(3): 332-337
王帆, 李豫东, 郭旗等. 温度对4管像素结构CMOS图像传感器性能参数的影响[J]. 发光学报, 2016,37(3): 332-337 DOI： 10.3788/fgxb20163703.0332.

WANG Fan, LI Yu-dong, GUO Qi etc. Temperature Effects on Performance Parameters in 4T CMOS Image Sensor[J]. Chinese Journal of Luminescence, 2016,37(3): 332-337 DOI： 10.3788/fgxb20163703.0332.

摘要

为了对4管像素结构CMOS图像传感器的空间应用提供可靠性指导

对4管像素结构的CMOS图像传感器进行了-40~80 ℃的变温实验

着重分析了样品器件的转换增益、满阱容量、饱和输出和暗电流等参数随温度的变化规律。实验结果表明

随着温度的升高

样品器件的转换增益从0.026 54 DN/e下降到0.023 79 DN/e

饱和输出从4 030 DN下降到3 396 DN

并且暗电流从22.9 epixel

-1

增长到649 epixel

-1

。其中器件转换增益的减小应主要归因于载流子迁移率随温度升高而下降使得像素后端读出电路增益降低;饱和输出的降低则是因为转换增益的降低

因为转换增益随温度变化对饱和输出的影响要大于满阱容量随温度变化对饱和输出的影响。

Abstract

In order to provide a reliable guidance for the spatial application of the 4T CMOS image sensor

temperature effects on 4T active pixel sensor CMOS image sensor from -40 ℃ to 80 ℃ were presented. The influences of temperature on conversion gain

full well charge

saturated output and dark current of the device were investigated. The experiment results show that the conversion gain of device decreases from 0.026 54 DN/e to 0.023 79 DN/e

the saturated output decreases from 4 030 DN to 3 396 DN

and the dark current increases from 22.9 epixel

-1

to 649 epixel

-1

with the temperature increasing. The decrease of conversion gain should be attributed to the decrease of the carrier mobility with the temperature increasing. The decrease of saturation output is mainly because of the decrease of the conversion gain which the influence of the conversion gain on saturated output is greater than that of the full well capacity with the change of temperature.

关键词

CMOS图像传感器转换增益满阱容量暗电流温度

Keywords

CMOS image sensorconversion gainfull well chargedark currenttemperature

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