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1. 五邑大学 应用物理与材料学院,广东 江门,529020
2. 南方科技大学 电子与电气工程系,广东 深圳,518055
[ "彭辉仁(1988-),男,广东化州人,硕士研究生,2013年于五邑大学获得学士学位,主要从事半导体发光器件的研究。 E-mail: penghren@163.com" ]
[ "陈树明(1983-),男,广东揭阳人,博士,副教授,2012年于香港科技大学获得博士学位,主要从事有机电致发光显示及照明技术的研究。 E-mail: chen.sm@sustc.edu.cn" ]
[ "王忆(1968-),男,安徽亳州人,博士,教授,1996年于中国科技大学获得博士学位,主要从事LED芯片外延制造及封装技术、稀土发光材料及永磁铁氧体磁性材料的研究。 E-mail: yiwangll@126.com" ]
纸质出版日期:2016-3-5,
收稿日期:2015-10-26,
修回日期:2015-12-21,
扫 描 看 全 文
彭辉仁, 陈树明, 王忆. 基于聚合物-量子点共混的量子点发光二极管[J]. 发光学报, 2016,37(3): 299-304
PENG Hui-ren, CHEN Shu-ming, WANG Yi. Quantum Dot Light-emitting Diodes with Mixed Polymer-quantum Dots Light-emitting Layer[J]. Chinese Journal of Luminescence, 2016,37(3): 299-304
彭辉仁, 陈树明, 王忆. 基于聚合物-量子点共混的量子点发光二极管[J]. 发光学报, 2016,37(3): 299-304 DOI: 10.3788/fgxb20163703.0299.
PENG Hui-ren, CHEN Shu-ming, WANG Yi. Quantum Dot Light-emitting Diodes with Mixed Polymer-quantum Dots Light-emitting Layer[J]. Chinese Journal of Luminescence, 2016,37(3): 299-304 DOI: 10.3788/fgxb20163703.0299.
在ITO玻璃上制备了ITO/poly(3
4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PASS)/poly(N
N-bis(4-butylphenyl)-N
N-bis(phenyl)benzidine(poly-TPD)/QD/1
3
5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl(TPBi)/LiF/Al 结构的量子点发光二极管(QD-LED)。通过优化量子点的浓度
发现浓度为30 mg/mL时的器件性能最优
最大外量子效率(EQE)为0.83%
最大发光亮度为4 076 cd/m
2
。为了进一步提高QD-LED的发光效率
将QD掺入聚合物poly(N-vinylcarbazole) (PVK)和1
3-Bis(5-(4-(tert-butyl)phenyl)-1
3
4-oxadiazol-2-yl)benzene (OXD-7)中
以使得注入的电子和空穴更加平衡
同时还有助于能量传递
降低QD团聚及修饰QD薄膜表面
减少激子猝灭效应等。为此
通过旋涂和蒸镀两步法制备ITO/PEDOT:PASS/poly-TPD/(PVK:OXD-7):QD/TPBi/LiF/Al 结构的器件
改变(PVK:OXD-7):QD比例(1:1
1:3
1:5
0:1)
发现(PVK:OXD-7):QD为1:3时的QD-LED具有最优性能
最大EQE为1.97%
相当于非掺杂器件的2.3倍
并且发光峰没有发生偏移。
Quantum dot light-emitting diodes (QDLED) with structure ITO/poly(3
4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PASS)/poly(N
N-bis(4-butylphenyl)-N
N-bis(phenyl)benzidine(poly-TPD)/QD/1
3
5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBi)/LiF/Al were fabricated. By optimizing the concentration of quantum dots
maximum external quantum efficiency (EQE) of 0.83% and maximum emission luminance of 4 076 cd/m
2
were achieved at a QD concentration of 30 mg/mL. In order to further improve the efficiency of QDLED
QDs were doped into polymer poly(N-vinylcarbazole) (PVK) and 1
3-Bis(5-(4-(tert-butyl)phenyl)-1
3
4-oxadiazol-2-yl)benzene (OXD-7) so as to balance the injection of electrons and holes
reduce the aggregation of QDs and improve the surface of the films. Devices with structure ITO/PEDOT:PASS/poly-TPD/(PVK:OXD-7):QD/TPBi/LiF/Al were fabricated by spin coating and thermal evaporation. By optimizing the doping concentration of QDs
the maximum EQE of 1.97% is obtained
which is 2.3-fold higher than that of the undoped devices.
量子点发光二极管聚合物PVK掺杂
quantum dot light emitting diodespolymer PVKdoping
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KANG B H, LEE S W, LIM S W, et al.. Enhanced charge transfer of QDs/polymer hybrid LED by interface controlling [J]. IEEE Electron. Dev. Lett., 2013, 34(5):656-658.
胡炼,吴惠桢. 基于量子点-CBP混合层的量子点LED的制备 [J]. 发光学报, 2015, 36(10):1106-1112. HU L, WU H Z. Preparation of quantum dot light-emitting diodes based on the quantum dots-CBP hybrid [J]. Chin. J. Lumin., 2015, 36(10):1106-1112. (in Chinese)
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BAE W K, PARK YS, LIM J, et al.. Controlling the influence of Auger recombination on the performance of quantum-dot light-emitting diodes [J]. Nat. Commun., 2013, 4:2661.
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