垒温对硅衬底GaN基蓝光LED发光效率的影响

高江东; 刘军林; 徐龙权; 王光绪; 丁杰; 陶喜霞; 张建立; 潘拴; 吴小明; 莫春兰; 王小兰; 全知觉; 郑畅达; 方芳; 江风益

doi:10.3788/fgxb20163702.0202

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垒温对硅衬底GaN基蓝光LED发光效率的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 垒温对硅衬底GaN基蓝光LED发光效率的影响
- Dependence of Electroluminescence on Barriers Temperature in GaN Base Blue LED on Silicon Substrate
- 发光学报 2016年37卷第2期页码：202-207
- 作者机构：
  
  南昌大学国家硅基LED工程技术研究中心,江西南昌,330047
- 作者简介：
- 基金信息：
  
  国家自然科学基金重点项目(61334001);863计划(2011AA03A101)资助项目
- DOI：10.3788/fgxb20163702.0202
  中图分类号： O484.4;TN383+.1
- 纸质出版日期：2016-2-10，
  
  收稿日期：2015-10-2，
  
  修回日期：2015-11-7，
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高江东, 刘军林, 徐龙权等. 垒温对硅衬底GaN基蓝光LED发光效率的影响[J]. 发光学报, 2016,37(2): 202-207

GAO Jiang-dong, LIU Jun-lin, XU Long-quan etc. Dependence of Electroluminescence on Barriers Temperature in GaN Base Blue LED on Silicon Substrate[J]. Chinese Journal of Luminescence, 2016,37(2): 202-207
高江东, 刘军林, 徐龙权等. 垒温对硅衬底GaN基蓝光LED发光效率的影响[J]. 发光学报, 2016,37(2): 202-207 DOI： 10.3788/fgxb20163702.0202.

GAO Jiang-dong, LIU Jun-lin, XU Long-quan etc. Dependence of Electroluminescence on Barriers Temperature in GaN Base Blue LED on Silicon Substrate[J]. Chinese Journal of Luminescence, 2016,37(2): 202-207 DOI： 10.3788/fgxb20163702.0202.

摘要

用MOCVD技术在硅衬底上生长了GaN基蓝光LED外延材料

研究了有源层多量子阱中垒的生长温度对发光效率的影响

获得了不同电流密度下外量子效率(EQE)随垒温的变化关系。结果表明

在860~915 ℃范围内

发光效率随着垒温的上升而上升。当垒温超过915 ℃后

发光效率大幅下降。这一EL特性与X光双晶衍射和二次离子质谱所获得的阱垒界面陡峭程度有明显的对应关系

界面越陡峭则发光效率越高。垒温过高使界面变差的原因归结为阱垒界面的原子扩散。垒温偏低使界面变差的原因归结为垒对前一个量子阱界面的修复作用和为后一个量子阱提供台阶流界面的能力偏弱。外延生长时的最佳垒温范围为895~915 ℃。

Abstract

The growth of GaN-based blue LED with different barriers temperature in multiple quantum wells on silicon substrate by MOCVD method was reported. The dependence of luminescence on barriers temperature was obtained. The relationship between external quantum efficiency (EQE) and barriers temperature under different current density showed that EQE increases with barriers temperature during the temperature from 860 to 915 ℃

and then EQE decreases a lot after the temperature over 915 ℃. The results of XRD

SIMS and EL support each other very obviously

which means that the luminescence efficiency is contributed on the sharpness of well-barrier interface. Over top temperature of barriers will result in a worse sharpness of well-barrier interface owing to an undesirable atoms diffusion. Much lower temperature of barriers will also cause a worse sharpness of well-barrier due to the non-step flow growth of barriers. The optimization barriers temperature range is from 895 to 915℃ for epitaxy growth.

关键词

LED硅衬底GaN垒温外量子效率

Keywords

LEDSi substrateGaNbarrier temperatureEQE

references

AMANO H, SAWAKI N, AKASAKI I, et al.. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer [J]. Appl. Phys. Lett., 1986, 48(5):353-355.

AMANO H, KITO M, HIRAMATSU K, et al.. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI) [J]. Jpn. J. Appl. Phys., 1989, 28(12):L2112-L2114.

NAKAMURA S. GaN growth using GaN buffer layer [J]. Jpn. J. Appl. Phys., 1991, 30(10A):L1705-L1707.

NAKAMURA S, IWASA N, SENOH M, et al.. Hole compensation mechanism of p-type GaN films [J]. Jpn. J. Appl. Phys., 1992, 31(5A):1258-1266.

PANKOVE J I, MILLER E A, BERKEYHEISER J E. GaN blue light-emitting diodes [J]. J. Lumin., 1972, 5(1):84-86.

BRASLAU N, CUOMO J J, HARRIS E P, et al.. Planar GaN electroluminescent device: US, US3849707[P]. 1974-11-19.

BUTTER E, FITZL G, HIRSCH D, et al.. The deposition of group Ⅲ nitrides on silicon substrates [J]. Thin Solid Films, 1979, 59(1):25-31.

TAKEUCHI T, AMANO H, HIRAMATSU K, et al.. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer [J]. J. Cryst. Growth, 1991, 115(1-4):634-638.

WATANABE A, TAKEUCHI T, HIROSAWA K, et al.. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer [J]. J. Cryst. Growth, 1993, 128(1-4):391-396.

YANG J W, SUN C J, CHEN Q, et al.. High quality GaN-InGaN heterostructures grown on (111) silicon substrates [J]. Appl. Phys. Lett., 1996, 69(23):3566-3568.

KOBAYASHI N P, KOBAYASHI J T, DAPKUS P D, et al.. GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer [J]. Appl. Phys. Lett., 1997, 71(24):3569-3571.

WANG L S, LIU X L, ZAN Y D, et al.. Wurtzite GaN epitaxial growth on a Si (001) substrate using -Al2O3 as an intermediate layer [J]. Appl. Phy. Lett., 1998, 72(1):109-111.

BOO J H, ROHR C, HO W. MOCVD of BN and GaN thin films on silicon: new attempt of GaN growth with BN buffer layer [J]. J. Cryst. Growth, 1998, 189-190:439-444.

GUHA S, BOJARCZUK N A. Ultraviolet and violet GaN light emitting diodes on silicon [J]. Appl. Phys. Lett., 1998, 72(4):415-417.

MO C L, FANG W Q, PU Y, et al.. Growth and characterization of InGaN blue LED structure on Si (111) by MOCVD [J]. J. Cryst. Growth, 2005, 285(3):312-317.

LIU J L, FENG F F, ZHOU Y H, et al.. Stability of Al/Ti/Au contacts to n-polar n-GaN of GaN based vertical light emitting diode on silicon substrate [J]. Appl. Phys. Lett., 2011, 99(11):111112-1-3.

LIU J L, ZHANG J L, MAO Q H, et al.. Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate [J]. Crystengcomm, 2013, 15(17):3372-3376.

WU X M, LIU J L, QUAN Z J, et al.. Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes [J]. Appl. Phys. Lett., 2014, 104(22):221101-1-5.

QUAN Z J, WANG L, ZHENG C D, et al.. Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes [J]. J. Appl. Phys., 2014, 116(18):183107-1-5.

SMALC-KOZIOROWSKA J, GRZANKA E, CZERNECKI R, et al.. Elimination of trench defects and V-pits from InGaN/GaN structures [J]. Appl. Phys. Lett., 2015, 106(10):101905.

JU G X, HONDA Y, TABUCHI M, et al.. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy [J]. J. Appl. Phys., 2014, 115(9):094906-1-6.

许振嘉. 半导体的检测与分析 [M]. 第2版. 北京: 科学出版社, 2007:126. XU Z J. Detection and Analysis of Semiconductor [M]. 2nd ed. Beijing: Science Press, 2007:126. (in Chinese)

LIU W, CHUA S J, ZHANG X H, et al.. Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions [J]. Appl. Phys. Lett., 2003, 83(5):914-916.

CHENG Y C, WU C M, CHEN M K, et al.. Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers [J]. Appl. Phys. Lett., 2004, 84(26):5422-5424.

HAO M, ISHIKAWA H, EGAWA T, et al.. Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells [J]. Appl. Phys. Lett., 2003, 82(26):4702-4704.

FLORESCU D I, TING S M, RAMER J C, et al.. Investigation of V-defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire [J]. Appl. Phys. Lett., 2003, 83(1):33-35.

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