浏览全部资源
扫码关注微信
1. 中国科学院大学 北京,100049
2. 重庆光电技术研究所 重庆,400060
3. 中国科学院特殊环境功能材料与器件重点实验室, 新疆电子信息材料与器件重点实验室, 中国科学院 新疆理化技术研究所,新疆 乌鲁木齐,830011
纸质出版日期:2016-1-10,
收稿日期:2015-9-25,
修回日期:2015-11-18,
扫 描 看 全 文
汪波, 李豫东, 郭旗等. 电荷耦合器件中子辐照诱发的位移效应[J]. 发光学报, 2016,37(1): 44-49
WANG Bo, LI Yu-dong, GUO Qi etc. Neutron Irradiation Induced Displacement Damage Effects on Charge Coupled Device[J]. Chinese Journal of Luminescence, 2016,37(1): 44-49
汪波, 李豫东, 郭旗等. 电荷耦合器件中子辐照诱发的位移效应[J]. 发光学报, 2016,37(1): 44-49 DOI: 10.3788/fgxb20163701.0044.
WANG Bo, LI Yu-dong, GUO Qi etc. Neutron Irradiation Induced Displacement Damage Effects on Charge Coupled Device[J]. Chinese Journal of Luminescence, 2016,37(1): 44-49 DOI: 10.3788/fgxb20163701.0044.
为研究电荷耦合器件空间辐照效应、参数退化机理
对国产6464像元电荷耦合器件进行了中子辐照位移损伤效应研究。样品在中子辐照下
暗信号、暗信号非均匀性和电荷转移效率等关键性能参数退化显著。研究结果表明:暗信号的退化是由于中子辐照产生的体缺陷能级在耗尽层中充当复合-产生中心
增大了热载流子的产生率所致
而各像素单元暗信号退化的不一致性使暗信号非均匀性增大;电荷转移效率显著减小则是由于中子辐照在转移沟道中产生的体缺陷不断捕获、发射电子所引起。在整个实验过程中
饱和输出电压的退化可以忽略不计
表现出较好的抗位移损伤能力。
Displacement damage effects due to neutron irradiations of charge coupled devices were presented through the analysis of the dark signals behavior in pixel arrays. When the fluence of neutron reached the predetermined point
the change of dark signal
dark signal non-uniformity
charge transfer efficiency and saturated output signal was measured off line. The major effect of neutron induced displacement damage on charge coupled device is the increase in dark signals as a result of carrier generation in the bulk depletion region of the pixel. Although the increase in the mean dark signals with neutron irradiation is important
the dark signals non-uniformity is generally the biggest concern for charge coupled device applications in space. Very large dark signals pixels can be produced when a collision occurs in a high electric field region of a pixel as a result of electric field enhanced emission. Another important performance parameter for a charge coupled device is the charge transfer efficiency
which is the fraction of signal charge transferred from pixel to pixel during read out. If a signal charge is trapped by neutron induced defect
and remains trapped for more than one clock cycle
it will be lost from the signal charge packet. Saturation output signal voltage does not have any obvious degradation even at the highest DDD level. The research will help the designers to know the radiation damage in charge coupled device and improve the tolerance by radiation hardening design.
电荷耦合器件中子辐照位移效应电荷转移效率暗信号
charge coupled devicesneutron irradiationdisplacement damage effectcharge transfer efficiencydark signal
HOPKINSON G R, MOHANMMADZADEH A. Radiation effects in charge coupled device imagers and CMOS active pixel sensors [J]. Int. J. High Speed Electron.Syst., 2004, 14(2):419-443.
丛忠超,余学峰,崔江维,等. 半导体器件总剂量辐射效应的热力学影响 [J]. 发光学报, 2014, 35(4):465-469. CONG Z C, YU X F, CUI J W, et al.. Thermodynamic impact on total dose effect for semiconductor cpmponents[J]. Chin. J. Lumin., 2014, 35(4):465-469. (in Chinese)
MAGNA P. Detection of visible photons in CCD and CMOS: a comparative view [J]. Nucl. Instrum. Methods Phys. Res. A, 2003, 504:199-212.
HOPKINSON G R. Proton-induced changes in CTE for n-channel CCDs and the effect on star tracker performance [J]. IEEE Trans Nucl. Sci., 2000, 47(6):2460-2465.
WACZYNSKI A, POLIDAN E J, MARSHALL P W, et al.. A comparison of charge transfer efficiency measurement techniques on proton damaged n-channel CCDs for the Hubble Space Telescope wide-field camera 3 [J]. IEEE Trans. Nucl. Sci., 2001, 48(6):1807-1814.
李豫东,汪波,郭旗,等. CCD与CMOS图像传感器辐射效应测试系统 [J]. 光学精密 工程, 2013, 21(11):2778-2784. LI Y D, WANG B, GUO Q, et al.. Testing system for radiation effects of CCD and CMOS image sensors [J]. Opt. Precision Eng., 2013, 21(11):2778-2784. (in Chinese)
王祖军,黄绍艳,刘敏波,等. CCD 位移辐射效应损伤机理分析 [J]. 半导体光电, 2010, 31(2):175-179. WANG Z J, HUANG S Y, LIU M B, et al.. Analysis of the displacement damage mechanism of radiation effects in CCD [J]. Semicond. Optoelectron., 2010, 31(2):175-179. (in Chinese)
WOOD S, DOYLE N J, SPITZNAGEL J A, et al.. Simulation of radiation damage in solids [J]. IEEE Trans. Nucl. Sci., 1981, 28(6):4107-4112.
SZE S M, NG K K. Physics of Semiconductor Devices [M]. New Jersey: John Wiley & Sons, 2006.
SEABROKE G, HOLLAND A, CROPPER M. Modelling radiation damage to ESA's Gaia satellite CCDs [J]. SPIE, 2008, 7021:70211P-1-12.
陈盘训.半导体器件和集成电路的辐射效应 [M]. 北京: 国防工业出版社, 2005. CHEN P X. Radiation Effects on Semiconductor Devices and Integrated Circuits [M]. Beijing: National Defense Industry Press, 2005. (in Chinese)
0
浏览量
82
下载量
1
CSCD
关联资源
相关文章
相关作者
相关机构