&alpha;-四噻吩薄膜的生长及性能研究

都昊; 邹凤君; 李一平; 闫闯; 谢强; 宋贵才; 孙丽晶; 王丽娟

doi:10.3788/fgxb20153612.1445

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α-四噻吩薄膜的生长及性能研究

器件制备及器件物理 | 更新时间：2020-08-12

- α-四噻吩薄膜的生长及性能研究
- Growth and Performance of α-quaterthiophene Film
- 发光学报 2015年36卷第12期页码：1445-1451
- 作者机构：
  
  1. 长春理工大学理学院,吉林长春,130022
  2. 长春工业大学化学工程学院,吉林长春,130012
  3. 长春工业大学基础科学学院,吉林长春,130012
- 作者简介：
- 基金信息：
  
  国家自然科学基金(21403016)();吉林省科技发展计划(20130102065JC,20140203018GX)资助项目()
- DOI：10.3788/fgxb20153612.1445
  中图分类号： TN321.5
- 纸质出版日期：2015-12-10，
  
  收稿日期：2015-9-8，
  
  修回日期：2015-11-2，
扫描看全文
都昊, 邹凤君, 李一平等. α-四噻吩薄膜的生长及性能研究[J]. 发光学报, 2015,36(12): 1445-1451

DU Hao, ZOU Feng-jun, LI Yi-ping etc. Growth and Performance of α-quaterthiophene Film[J]. Chinese Journal of Luminescence, 2015,36(12): 1445-1451
都昊, 邹凤君, 李一平等. α-四噻吩薄膜的生长及性能研究[J]. 发光学报, 2015,36(12): 1445-1451 DOI： 10.3788/fgxb20153612.1445.

DU Hao, ZOU Feng-jun, LI Yi-ping etc. Growth and Performance of α-quaterthiophene Film[J]. Chinese Journal of Luminescence, 2015,36(12): 1445-1451 DOI： 10.3788/fgxb20153612.1445.

摘要

利用原子力显微镜(AFM)、X射线衍射仪(XRD)研究了在氧化硅衬底上生长的-四噻吩(-4T)薄膜的表面形貌及分子取向。在低温下

获得了大尺寸、高有序的-4T薄膜

为横向生长模式。衬底温度35 ℃以上转为纵向生长模式。晶体结构分析发现

-4T薄膜属于单斜晶系

分子

-轴垂直基板排列。强的衍射峰和高有序的衍射峰意味着-4T薄膜具有高的有序性和结晶性。电性能研究发现

提高衬底温度有利于提高薄膜的迁移率

衬底温度为35 ℃时器件迁移率为3.5310

-2

-1

。但衬底温度进一步增加

迁移率反而下降

与原子力分析结果一致。低温退火可以降低器件的亚阈值陡度

从13.27 Vdec

-1

降低到3.83 Vdec

-1

使器件的界面缺陷降低

电性能提高。

Abstract

Surface morphology and molecular orientation of -quaterthiophene (-4T) thin films on silicon dioxide (SiO

) substrate were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD). At low substrate temperature

the large-size domain and high-order -quaterthiophene (-4T) thin film was obtained. The -4T film exhibits the horizontal growth mode at low substrate temperature

but changes to the vertical growth mode above 35 ℃. By XRD analysis

it is found that the -4T thin film adopts a monoclinic system

and the molecule

-axis is perpendicular to the substrate. The strong diffraction peaks and the high order diffraction peaks reveal that the films possess high crystallinity and order. In the electrical performance

the mobility increases with the increasing of the substrate temperature

and the mobility of -4T device is 3.5310

-2

-1

at 35 ℃. But the mobility of -4T film decreases above 35 ℃. The results are in accordance with AFM analysis. The subthreshold gradient is reduced from 13.27 to 3.83 Vdec

-1

by annealing at low temperature. The results imply that the interface defects are reduced and the electrical performances are greatly improved.

关键词

&alpha-四噻吩薄膜生长分子取向电性能

Keywords

references

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α-四噻吩薄膜的生长及性能研究

Growth and Performance of α-quaterthiophene Film

DOI：10.3788/fgxb20153612.1445

摘要

Abstract

关键词

Keywords

references