ZHOU Mei, LI Chun-yan, ZHAO De-gang. Effects and Design of i-GaN and p-GaN Layer Thickness on The Back-illuminated and Front-illuminated GaN p-i-n Ultraviolet Photodetectors[J]. Chinese Journal of Luminescence, 2015,36(9): 1034-1040
ZHOU Mei, LI Chun-yan, ZHAO De-gang. Effects and Design of i-GaN and p-GaN Layer Thickness on The Back-illuminated and Front-illuminated GaN p-i-n Ultraviolet Photodetectors[J]. Chinese Journal of Luminescence, 2015,36(9): 1034-1040 DOI: 10.3788/fgxb20153609.1034.
The effects of i-GaN and p-GaN layer thickness on the spectral response of back-illuminated and front-illuminated GaN p-i-n structure ultraviolet photodetectors were investigated by theory calculation. For the back-illuminated p-i-n photodetectors
the device quantum efficiency can be improved by both suitably decreasing the thickness of i-GaN layer and increasing the thickness of p-GaN layer
and the Ohmic contact property of p-GaN has not obvious influence on the device responsivity. The quantum efficiency of photodetector can be improved by reducing the background carrier concentration of i-GaN layer. The results are different for the front-illuminated p-i-n photodetectors. it is found that the device quantum efficiency can be improved by both properly increasing the thickness of i-GaN layer and decreasing the thickness of p-GaN layer
and the excellent Ohmic contact property of p-GaN is very important for the front-illuminated p-i-n hotodector. The opposite design method of i-GaN and p-GaN layer for the two photodetectors are mainly attributed to the different energy band and photon absorption.
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