背照射和正照射p-i-n结构GaN紫外探测器的i-GaN和p-GaN厚度设计

周梅; 李春燕; 赵德刚

doi:10.3788/fgxb20153609.1034

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背照射和正照射p-i-n结构GaN紫外探测器的i-GaN和p-GaN厚度设计

器件制备及器件物理 | 更新时间：2020-08-12

- 背照射和正照射p-i-n结构GaN紫外探测器的i-GaN和p-GaN厚度设计
- Effects and Design of i-GaN and p-GaN Layer Thickness on The Back-illuminated and Front-illuminated GaN p-i-n Ultraviolet Photodetectors
- 发光学报 2015年36卷第9期页码：1034-1040
- 作者机构：
  
  1. 中国农业大学理学院应用物理系北京,100083
  2. 中国科学院半导体研究所集成光电子学国家重点实验室北京,100083
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61474142, 11474355, 21403297, 21024046)();北京市英才计划(31056201)资助项目()
- DOI：10.3788/fgxb20153609.1034
  中图分类号： TN304.2
- 纸质出版日期：2015-9-3，
  
  收稿日期：2015-6-9，
  
  修回日期：2015-7-22，
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周梅, 李春燕, 赵德刚. 背照射和正照射p-i-n结构GaN紫外探测器的i-GaN和p-GaN厚度设计[J]. 发光学报, 2015,36(9): 1034-1040

ZHOU Mei, LI Chun-yan, ZHAO De-gang. Effects and Design of i-GaN and p-GaN Layer Thickness on The Back-illuminated and Front-illuminated GaN p-i-n Ultraviolet Photodetectors[J]. Chinese Journal of Luminescence, 2015,36(9): 1034-1040
周梅, 李春燕, 赵德刚. 背照射和正照射p-i-n结构GaN紫外探测器的i-GaN和p-GaN厚度设计[J]. 发光学报, 2015,36(9): 1034-1040 DOI： 10.3788/fgxb20153609.1034.

ZHOU Mei, LI Chun-yan, ZHAO De-gang. Effects and Design of i-GaN and p-GaN Layer Thickness on The Back-illuminated and Front-illuminated GaN p-i-n Ultraviolet Photodetectors[J]. Chinese Journal of Luminescence, 2015,36(9): 1034-1040 DOI： 10.3788/fgxb20153609.1034.

摘要

研究了i-GaN和p-GaN厚度对背照射和正照射p-i-n结构GaN紫外探测器响应光谱的影响。模拟计算发现:对于背照射结构

适当地减小i-GaN厚度有利于提高探测器的响应

降低i-GaN层的本底载流子浓度也有利于提高探测器的响应;p-GaN的欧姆接触特性好坏对探测器的响应影响不大

适当地增加p-GaN厚度可以改善探测器性能。而正照射结构则不同

i-GaN厚度对探测器的响应度影响不大

但欧姆接触特性差将严重降低探测器的响应

适当地减小p-GaN厚度可以大幅度改善探测器的响应特性。能带结构和入射光吸收的差别导致了正照射和背照射探测器结构中i层和p层厚度的选择和设计不同。

Abstract

The effects of i-GaN and p-GaN layer thickness on the spectral response of back-illuminated and front-illuminated GaN p-i-n structure ultraviolet photodetectors were investigated by theory calculation. For the back-illuminated p-i-n photodetectors

the device quantum efficiency can be improved by both suitably decreasing the thickness of i-GaN layer and increasing the thickness of p-GaN layer

and the Ohmic contact property of p-GaN has not obvious influence on the device responsivity. The quantum efficiency of photodetector can be improved by reducing the background carrier concentration of i-GaN layer. The results are different for the front-illuminated p-i-n photodetectors. it is found that the device quantum efficiency can be improved by both properly increasing the thickness of i-GaN layer and decreasing the thickness of p-GaN layer

and the excellent Ohmic contact property of p-GaN is very important for the front-illuminated p-i-n hotodector. The opposite design method of i-GaN and p-GaN layer for the two photodetectors are mainly attributed to the different energy band and photon absorption.

关键词

GaNp-i-n结构紫外探测器量子效率

Keywords

GaNp-i-n structureultraviolet photodetectorquantum efficiency

references

Carrano J C, Li T, Brown D L, et al. Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN [J]. Appl. Phys. Lett., 1998, 73(17):2405-2407.

Katz O, Garber V, Meyler B, et al. Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry [J]. Appl. Phys. Lett., 2002, 80(3):347-349.

McClintock R, Mayes K, Yasan A, et al. 320256 solar-blind focal plane arrays based on AlxGa1-xN [J]. Appl. Phys. Lett., 2005, 86(1):011117-1-3.

Butun B, Tut T, Ulker E, et al. High-performance visible-blind GaN-based p-i-n photodetectors [J]. Appl. Phys. Lett., 2008, 92(3):033507-1-3.

Jiang H, Egawa T. Low-dark-current high-performance AlGaN solar-blind p-i-n photodiodes [J]. Jpn. J. Appl. Phys., 2008, 47(3):1541-1543.

Cicek E, Vashaei Z, McClintock R, et al. Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates [J]. Appl. Phys. Lett., 2010, 96(26):261107-1-3.

Yang M, Chong M, Zhao D G, et al. Back-illuminated AlxGa1-xN-based dual-band solar-blind ultraviolet photodetectors [J]. J. Semicond. , 2014, 35(6):064008-1-4.

Cicek E, McClintock R, Haddadi A, et al. High performance solar-blind ultraviolet 320256 focal plane arrays based on AlxGa1-xN [J]. IEEE J. Quant. Electon., 2014, 50(8):591-595.

Alaie Z, Nejad S M, Yousefi M H. Recent advances in ultraviolet photodetectors [J]. Mater. Sci. Semicond. Proc., 2015, 29:16-55.

Sze S M. Physics of Semiconductor Devices [M]. New York: Wiley, 1981.

Zhou M, Zhao D G. Performance improvement of GaN based Schottky barrier ultraviolet photodetector by adding a thin AlGaN window layer [J]. Chin. Phys. Lett., 2007, 24(6):1745-1748.

Zhou M, Zhao D G. Effects of structure parameters on the performances of GaN Schottky barrier ultraviolet photodetectors and device design [J]. Chin. J. Lumin.(发光学报), 2009, 30(6):824-831 (in Chinese).

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