GaAs基高功率半导体激光器单管耦合研究

王鑫; 王翠鸾; 吴霞; 朱凌妮; 马骁宇; 刘素平

doi:10.3788/fgxb20153609.1018

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GaAs基高功率半导体激光器单管耦合研究

器件制备及器件物理 | 更新时间：2020-08-12

- GaAs基高功率半导体激光器单管耦合研究
- Coupling Research of High Power Single GaAs Based Semiconductor Laser
- 发光学报 2015年36卷第9期页码：1018-1021
- 作者机构：
  
  中国科学院半导体研究所
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153609.1018
  中图分类号： TN248.4
- 纸质出版日期：2015-9-3，
  
  收稿日期：2015-5-19，
  
  修回日期：2015-7-29，
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王鑫, 王翠鸾, 吴霞等. GaAs基高功率半导体激光器单管耦合研究[J]. 发光学报, 2015,36(9): 1018-1021

WANG Xin, WANG Cui-luan, WU Xia etc. Coupling Research of High Power Single GaAs Based Semiconductor Laser[J]. Chinese Journal of Luminescence, 2015,36(9): 1018-1021
王鑫, 王翠鸾, 吴霞等. GaAs基高功率半导体激光器单管耦合研究[J]. 发光学报, 2015,36(9): 1018-1021 DOI： 10.3788/fgxb20153609.1018.

WANG Xin, WANG Cui-luan, WU Xia etc. Coupling Research of High Power Single GaAs Based Semiconductor Laser[J]. Chinese Journal of Luminescence, 2015,36(9): 1018-1021 DOI： 10.3788/fgxb20153609.1018.

摘要

设计了一种高亮度、高功率半导体激光器单管耦合输出模块

采用波长为975nm的10W的GaAs基半导体激光器

将半导体激光器输出光束耦合进数值孔径0.18、纤芯直径105m的光纤中

获得10A电流下的输出功率为9.37W

耦合效率为94.3%

亮度为1.64MW/(cm

str)。

Abstract

A high brightness and high power fiber coupling laser module with single diode laser (LD) was designed and fabricated. The wavelength of GaAs semiconductor laser is 975 nm and power is 10W. The numerical aperture of the fiber is 0.18 and the core diameter is 105m. When the drive current is 10A

9.37W output power is obtained from the fiber

the coupling efficiency is 94.3%

and the brightness is 1.64MW/(cm

str).

关键词

半导体激光器光纤耦合亮度

Keywords

semiconductor laserfiber couplingbrightness

references

Wang L J, NingY Q, Qin L, et al. Develop of high power diode laser [J]. Chin. J. Lumin.(发光学报), 2015, 36(1):1-16 (in Chinese).

Zhou Z P, Bo B X, Gao X, et al. Fiber coupling design of high power semiconductor laser based on ZEMAX [J]. Chin. J. Lumin.(发光学报), 2013, 34(9):1208-1212 (in Chinese).

Bo B X, Gao X, Wang L, et al. 808 nm wavelength high-power fibre coupling LD [J]. Chin. J. Lasers (中国激光), 1999, 26(3):193-196 (in Chinese).

Faircloth B. High-brightness high-power fiber coupled diode laser system for material processing and laser pumping [J]. SPIE, 2003, 4973:34-41.

Chen H N, Zou Y G, Xu L, et al. Fiber coupling technology of high power semiconductor laser [J]. J. Changchun Univ. Sci. Technol.(长春理工大学学报), 2014, 37(1):6-9 (in Chinese).

Zhou Z P. Fiber Coupling Design of Hundred-watt High Brightness Semiconductor Lasers [D]. Changchun: Changchun University Science and Technology, 2014 (in Chinese).

Gao X, Bo B X, Zhang J, et al. High brightness operation of fiber coupling multiplex diode lasers [J]. Chin. J. Lasers (中国激光), 2007, 34(11):1472-1475 (in Chinese).

Zhu H B, Hao M M, Peng H Y, et al. Module of fiber coupled diode laser based on 808 nm single emitters combination [J]. Chin. J. Lasers (中国激光), 2012, 39(5):0502001-1-5 (in Chinese).

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