WANG Xin, WANG Cui-luan, WU Xia etc. Coupling Research of High Power Single GaAs Based Semiconductor Laser[J]. Chinese Journal of Luminescence, 2015,36(9): 1018-1021
WANG Xin, WANG Cui-luan, WU Xia etc. Coupling Research of High Power Single GaAs Based Semiconductor Laser[J]. Chinese Journal of Luminescence, 2015,36(9): 1018-1021 DOI: 10.3788/fgxb20153609.1018.
A high brightness and high power fiber coupling laser module with single diode laser (LD) was designed and fabricated. The wavelength of GaAs semiconductor laser is 975 nm and power is 10W. The numerical aperture of the fiber is 0.18 and the core diameter is 105m. When the drive current is 10A
9.37W output power is obtained from the fiber
the coupling efficiency is 94.3%
and the brightness is 1.64MW/(cm
2
str).
关键词
半导体激光器光纤耦合亮度
Keywords
semiconductor laserfiber couplingbrightness
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