GaAs在光通讯波段的超快非线性光学研究

陈智慧; 肖思; 何军; 顾兵

doi:10.3788/fgxb20153608.0969

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GaAs在光通讯波段的超快非线性光学研究

发光学应用及交叉前沿 | 更新时间：2020-08-12

- GaAs在光通讯波段的超快非线性光学研究
- Ultrafast Optical Nonlinearities in GaAs at Telecommunication Wavelengths
- 发光学报 2015年36卷第8期页码：969-975
- 作者机构：
  
  1. 中南大学物理与电子学院先进材料超微结构与超快过程研究所, 中南大学超微结构与超快过程湖南省重点实验室,湖南长沙,410083
  2. 东南大学先进光子学中心,江苏南京,210096
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61222406,11174371,11174160)();湖南省自然科学基金(12JJ1001)();教育部博士学科点专项科研基金(20110162
- DOI：10.3788/fgxb20153608.0969
  中图分类号： O433.1
- 纸质出版日期：2015-8-3，
  
  收稿日期：2015-5-14，
  
  修回日期：2015-6-24，
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陈智慧, 肖思, 何军等. GaAs在光通讯波段的超快非线性光学研究[J]. 发光学报, 2015,36(8): 969-975

CHEN Zhi-hui, XIAO Si, HE Jun etc. Ultrafast Optical Nonlinearities in GaAs at Telecommunication Wavelengths[J]. Chinese Journal of Luminescence, 2015,36(8): 969-975
陈智慧, 肖思, 何军等. GaAs在光通讯波段的超快非线性光学研究[J]. 发光学报, 2015,36(8): 969-975 DOI： 10.3788/fgxb20153608.0969.

CHEN Zhi-hui, XIAO Si, HE Jun etc. Ultrafast Optical Nonlinearities in GaAs at Telecommunication Wavelengths[J]. Chinese Journal of Luminescence, 2015,36(8): 969-975 DOI： 10.3788/fgxb20153608.0969.

摘要

采用Z-扫描和泵浦-探测技术

在光通讯波段对砷化镓(GaAs)单晶进行了非线性动力学以及非线性光学的实验研究.飞秒泵浦-探测实验结果表明

三阶非线性光学效应源于砷化镓单晶对飞秒激光的瞬态双光子吸收

而五阶非线性光学效应源于砷化镓单晶双光子吸收诱导的自由载流子吸收效应.通过Z扫描实验

得到了关于GaAs单晶所有的非线性光学参数

包括双光子吸收系数、三阶非线性折射系数、双光子吸收诱导的自由载流子吸收截面以及双光子吸收诱导的自由载流子折射截面.结果表明

砷化镓单晶在制造光限幅器件和光电探测器方面具有良好的发展前景.

Abstract

We report experimental investigations of nonlinear dynamics and optical nonlinearities of GaAs single crystal in the telecommunication windows. Femtosecond time-resolved degenerate pump-probe measurements indicate that the observed third-order nonlinear process originates from the instantaneous effect whereas the fifth-order effect arises from two-photon absorption (2PA) induced free-carrier nonlinearities. By performing the Z-scan experiments with femtosecond laser pulses at the wavelengths of 1 300 nm and 1 500 nm

we determine all nonlinear parameters of GaAs crystal

including 2PA coefficient

third-order nonlinear refraction index

2PA-induced free-carrier absorption cross section

and 2PA-induced free-carrier refraction cross section. These results suggest that GaAs crystal is a promising candidate for applications on optical limiting and photodetector at the telecommunication wavelengths.

关键词

双光子吸收自由载流子吸收砷化镓单晶光通讯波长

Keywords

two-photon absorptionfree carrier absorptionGaAs crystaltelecommunication wavelengths

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