Al2O3薄层修饰SiNx绝缘层的IGZO-TFTs器件的性能研究

郭永林; 梁续旭; 胡守成; 穆晓龄; 曲加伟; 王红波; 赵毅

doi:10.3788/fgxb20153608.0947

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Al₂O₃薄层修饰SiN_x绝缘层的IGZO-TFTs器件的性能研究

器件制备及器件物理 | 更新时间：2020-08-12

- Al₂O₃薄层修饰SiN_x绝缘层的IGZO-TFTs器件的性能研究
- Improvement of IGZO-TFTs Performance with SiN_x Gate Insulator Modified by Al₂O₃ Film
- 发光学报 2015年36卷第8期页码：947-952
- 作者机构：
  
  吉林大学电子科学与工程学院集成光电子学国家重点联合实验室,吉林长春,130012
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61275033)资助项目()
- DOI：10.3788/fgxb20153608.0947
  中图分类号： TN321+.5
- 纸质出版日期：2015-8-3，
  
  收稿日期：2015-5-18，
  
  修回日期：2015-6-21，
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郭永林, 梁续旭, 胡守成等. Al2O3薄层修饰SiNx绝缘层的IGZO-TFTs器件的性能研究[J]. 发光学报, 2015,36(8): 947-952

GUO Yong-lin, LIANG Xu-xu, HU Shou-cheng etc. Improvement of IGZO-TFTs Performance with SiNx Gate Insulator Modified by Al2O3 Film[J]. Chinese Journal of Luminescence, 2015,36(8): 947-952
郭永林, 梁续旭, 胡守成等. Al2O3薄层修饰SiNx绝缘层的IGZO-TFTs器件的性能研究[J]. 发光学报, 2015,36(8): 947-952 DOI： 10.3788/fgxb20153608.0947.

GUO Yong-lin, LIANG Xu-xu, HU Shou-cheng etc. Improvement of IGZO-TFTs Performance with SiNx Gate Insulator Modified by Al2O3 Film[J]. Chinese Journal of Luminescence, 2015,36(8): 947-952 DOI： 10.3788/fgxb20153608.0947.

摘要

采用原子层沉积工艺(ALD)生长均匀致密的三氧化二铝(Al

)薄层对氮化硅(SiN

)绝缘层进行修饰

研究了铟镓锌氧薄膜晶体管(IGZO-TFTs)器件的性能.当Al

修饰层厚度为4 nm时

绝缘层-有源层界面的最大缺陷态密度相比于未修饰器件降低了17.2%

器件性能得到显著改善.场效应迁移率由1.19 cm

/(Vs)提高到7.11 cm

/(Vs)

阈值电压由39.70 V降低到25.37 V

1 h正向偏压应力下的阈值电压漂移量由2.19 V减小到1.41 V.

Abstract

Top-contact thin-film transistors(TFTs) were fabricated using SiN

as the gate insulator and InGaZnO as the channel layer. The insulator was modified by Al

layer and its effect on the performance of IGZO-TFTs was investagated. The results show that TFTs with 4-nm-thick Al

film exhibits the best electrical performance. The best performance can be attributed to the suppression of maximum density of surface states at the channel-insulator interface which is reduced by 17.2% contrasting to the TFTs without Al

buffer layers. The field effect mobility increases from 1.19 to 7.11 cm

/(Vs)

and the threshold voltage decreases from 39.70 to 25.37 V. Under bias stress for 1 h

the threshold voltage shift decreases from 2.19 to 1.41 V/dec.

关键词

铟镓锌氧薄膜晶体管三氧化二铝氮化硅最大缺陷态密度

Keywords

IGZO thin film transistorsAl2O3SiNxthe maximum density of surface states

references

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