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吉林大学电子科学与工程学院 集成光电子学国家重点联合实验室,吉林 长春,130012
纸质出版日期:2015-8-3,
收稿日期:2015-5-18,
修回日期:2015-6-21,
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郭永林, 梁续旭, 胡守成等. Al<sub>2</sub>O<sub>3</sub>薄层修饰SiN<sub><em>x</em></sub>绝缘层的IGZO-TFTs器件的性能研究[J]. 发光学报, 2015,36(8): 947-952
GUO Yong-lin, LIANG Xu-xu, HU Shou-cheng etc. Improvement of IGZO-TFTs Performance with SiN<sub><em>x</em></sub> Gate Insulator Modified by Al<sub>2</sub>O<sub>3</sub> Film[J]. Chinese Journal of Luminescence, 2015,36(8): 947-952
郭永林, 梁续旭, 胡守成等. Al<sub>2</sub>O<sub>3</sub>薄层修饰SiN<sub><em>x</em></sub>绝缘层的IGZO-TFTs器件的性能研究[J]. 发光学报, 2015,36(8): 947-952 DOI: 10.3788/fgxb20153608.0947.
GUO Yong-lin, LIANG Xu-xu, HU Shou-cheng etc. Improvement of IGZO-TFTs Performance with SiN<sub><em>x</em></sub> Gate Insulator Modified by Al<sub>2</sub>O<sub>3</sub> Film[J]. Chinese Journal of Luminescence, 2015,36(8): 947-952 DOI: 10.3788/fgxb20153608.0947.
采用原子层沉积工艺(ALD)生长均匀致密的三氧化二铝(Al
2
O
3
)薄层对氮化硅(SiN
x
)绝缘层进行修饰
研究了铟镓锌氧薄膜晶体管(IGZO-TFTs)器件的性能.当Al
2
O
3
修饰层厚度为4 nm时
绝缘层-有源层界面的最大缺陷态密度相比于未修饰器件降低了17.2%
器件性能得到显著改善.场效应迁移率由1.19 cm
2
/(Vs)提高到7.11 cm
2
/(Vs)
阈值电压由39.70 V降低到25.37 V
1 h正向偏压应力下的阈值电压漂移量由2.19 V减小到1.41 V.
Top-contact thin-film transistors(TFTs) were fabricated using SiN
x
as the gate insulator and InGaZnO as the channel layer. The insulator was modified by Al
2
O
3
layer and its effect on the performance of IGZO-TFTs was investagated. The results show that TFTs with 4-nm-thick Al
2
O
3
film exhibits the best electrical performance. The best performance can be attributed to the suppression of maximum density of surface states at the channel-insulator interface which is reduced by 17.2% contrasting to the TFTs without Al
2
O
3
buffer layers. The field effect mobility increases from 1.19 to 7.11 cm
2
/(Vs)
and the threshold voltage decreases from 39.70 to 25.37 V. Under bias stress for 1 h
the threshold voltage shift decreases from 2.19 to 1.41 V/dec.
铟镓锌氧薄膜晶体管三氧化二铝氮化硅最大缺陷态密度
IGZO thin film transistorsAl2O3SiNxthe maximum density of surface states
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Ding X, Zhang J, Zhang H, et al. ZrO2 insulator modified by a thin Al2O3 film to enhance the performance of InGaZnO thin-film transistor [J]. Microelectron. Reliab., 2014, 54:2401-2405.
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