旋涂速度对制备P3HT有机场效应晶体管性能的影响

蒋晶; 郑灵程; 王倩; 吴峰; 程晓曼

doi:10.3788/fgxb20153608.0941

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旋涂速度对制备P3HT有机场效应晶体管性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 旋涂速度对制备P3HT有机场效应晶体管性能的影响
- Role of Spinning Speed in Fabrication of Spin-coated P3HT-based OFETs
- 发光学报 2015年36卷第8期页码：941-946
- 作者机构：
  
  1. 天津理工大学理学院, 天津 300384
  2. 天津理工大学材料科学与工程学院, 显示材料与光电器件重点实验室(教育部), 天津光电材料与器件重点实验室天津,300384
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61076065,11204214)资助项目()
- DOI：10.3788/fgxb20153608.0941
  中图分类号： O47
- 纸质出版日期：2015-8-3，
  
  收稿日期：2015-5-19，
  
  修回日期：2015-6-16，
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蒋晶, 郑灵程, 王倩等. 旋涂速度对制备P3HT有机场效应晶体管性能的影响[J]. 发光学报, 2015,36(8): 941-946

JIANG Jing, ZHENG Ling-cheng, WANG Qian etc. Role of Spinning Speed in Fabrication of Spin-coated P3HT-based OFETs[J]. Chinese Journal of Luminescence, 2015,36(8): 941-946
蒋晶, 郑灵程, 王倩等. 旋涂速度对制备P3HT有机场效应晶体管性能的影响[J]. 发光学报, 2015,36(8): 941-946 DOI： 10.3788/fgxb20153608.0941.

JIANG Jing, ZHENG Ling-cheng, WANG Qian etc. Role of Spinning Speed in Fabrication of Spin-coated P3HT-based OFETs[J]. Chinese Journal of Luminescence, 2015,36(8): 941-946 DOI： 10.3788/fgxb20153608.0941.

摘要

采用溶液化的方法制备了以PMMA为绝缘层、P3HT为有源层的有机场效应晶体管.研究了P3HT有源层和PMMA绝缘层的旋涂速度对器件性能的影响.实验结果表明

当P3HT和PMMA的旋涂速度均为2 000 r/min时

器件的性能最佳.峰值场效应迁移率为6.8410

-2

－1

.结果表明

选择适当的旋涂速度是一种有效提高溶液化制备有机场效应晶体管性能的方法.

Abstract

P3HT-based organic field effect transistors(OFETs) with PMMA gate dielectric were fabricated by solution process. The effects of the spinning speeds of both P3HT active layer and PMMA gate dielectric on the performance of the devices were investigated. The experiment results show that the fabricated OFETs exhibit the optimal performance at the spinning speeds of 2 000 r/min of both P3HT and PMMA

of which the field effect mobility is 6.8410

-2

－1

. This indicates that spinning speed is a technological parameter to improve the performance of solution-processed OFETs.

关键词

有机场效应晶体管旋涂速度P3HTPMMA

Keywords

organic field effect transistorsspinning speedP3HTPMMA

references

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Meng H F, Liu C C, Jiang C J, et al. Effect of gate metal on polymer transistor with glass substrate [J]. Appl. Phys. Lett., 2006, 89(24):243503-1-3.

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