使用铜源漏电极的非晶氧化铟锌薄膜晶体管的研究

徐瑞霞; 陈子楷; 赵铭杰; 宁洪龙; 邹建华; 陶洪; 王磊; 徐苗; 彭俊彪

doi:10.3788/fgxb20153608.0935

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使用铜源漏电极的非晶氧化铟锌薄膜晶体管的研究

器件制备及器件物理 | 更新时间：2020-08-12

- 使用铜源漏电极的非晶氧化铟锌薄膜晶体管的研究
- Amorphous Indium-zinc-oxide Thin-film Transistors with Copper Source/Drain Electrodes
- 发光学报 2015年36卷第8期页码：935-940
- 作者机构：
  
  1. 华南理工大学电子与信息学院,广东广州,510640
  2. 广州新视界光电科技有限公司,广东广州,510730
  3. 华南理工大学发光材料与器件国家重点实验室, 广东广州 510641
- 作者简介：
- 基金信息：
  
  广东省引进创新科研团队计划(201101C0105067115)();中国科学院红外物理国家重点实验室开放课题(M201406)();国家自然科学基金重点项目(6103
- DOI：10.3788/fgxb20153608.0935
  中图分类号： TN321+.5
- 纸质出版日期：2015-8-3，
  
  收稿日期：2015-4-2，
  
  修回日期：2015-6-4，
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徐瑞霞, 陈子楷, 赵铭杰等. 使用铜源漏电极的非晶氧化铟锌薄膜晶体管的研究[J]. 发光学报, 2015,36(8): 935-940

XU Rui-xia, CHEN Zi-kai, ZHAO Ming-jie etc. Amorphous Indium-zinc-oxide Thin-film Transistors with Copper Source/Drain Electrodes[J]. Chinese Journal of Luminescence, 2015,36(8): 935-940
徐瑞霞, 陈子楷, 赵铭杰等. 使用铜源漏电极的非晶氧化铟锌薄膜晶体管的研究[J]. 发光学报, 2015,36(8): 935-940 DOI： 10.3788/fgxb20153608.0935.

XU Rui-xia, CHEN Zi-kai, ZHAO Ming-jie etc. Amorphous Indium-zinc-oxide Thin-film Transistors with Copper Source/Drain Electrodes[J]. Chinese Journal of Luminescence, 2015,36(8): 935-940 DOI： 10.3788/fgxb20153608.0935.

摘要

为了实现氧化物薄膜晶体管(TFT)的低电阻布线

采用Cu作为氧化物TFT的源漏电极.通过优化成膜工艺制备了电阻率低至2.0 cm的Cu膜

分析了Cu膜的晶体结构、粘附性及其与a-IZO薄膜的界面

制备了以a-IZO为有源层和Cu膜的粘附层的TFT器件.结果表明:所制备的Cu膜呈多晶结构;引入a-IZO粘附层增强了Cu膜与衬底的粘附性;同时

Cu在a-IZO中的扩散得到了抑制.所制备的TFT的迁移率、亚阈值摆幅和阈值电压分别为12.9 cm

/(Vs)、0.28 V/dec和-0.6 V.

Abstract

Cu was used as the source/drain (S/D) electrodes of amorphous indium-zinc-oxide (a-IZO) thin-film transistors (TFTs) in order to realize low-resistance metallization in oxide thin film transistors. Cu film with a resistivity as low as 2.0 cm was deposited by optimizing the sputtering process. The crystal structure

adhesive property of Cu film as well as the interfaces of Cu/a-IZO were investigated. In addition

a-IZO TFTs with Cu S/D electrodes were fabricated. The Cu films were polycrystalline. The adhesion of Cu to glass substrate was enhanced by introducing an a-IZO film. Meanwhile

the diffusion of Cu atoms was suppressed in a-IZO. The fabricated TFT exhibited a saturated mobility of 12.9 cm

/(Vs)

a subthreshold voltage of 0.28 V/dec and a threshold voltage of -0.6 V.

关键词

薄膜晶体管氧化铟锌铜布线

Keywords

thin-film transistorindium-zinc-oxidecopper metallization

references

Fortunato E, Barquinha P, Martins R. Oxide semiconductor thin-film transistors: A review of recent advances [J]. Adv. Mater., 2012, 24(22):2945-2986.

Park J S, Maeng W J, Kim H S, et al. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices [J]. Thin Solid Films, 2011, 520(6):1679-1693.

Kang D H, Kang I, Ryu S H, et al. Self-aligned coplanar a-IGZO TFTs and application to high-speed circuits [J]. IEEE Electron. Dev. Lett., 2011, 32(10):1385-1387.

Arai T, Sasaoka T. Emergent oxide TFT technologies for next-generation AM-OLED displays [J]. SID Symposium Digest of Technical, 2011, 42(1):710-713.

Nagao K, Neaton J B, Ashcroft N W. First-principles study of adhesion at Cu/SiO2 interfaces [J]. Phys. Rev. B, 2003, 68(12):125403-1-8.

Yim J R, Jung S Y, Yeon H W, et al. Effects of metal electrode on the electrical performance of amorphous In-Ga-Zn-O thin film transistor [J]. Jpn. J. Appl. Phys., 2012, 51(1R):011401-1-5.

Lee C K, Park S Y, Jung H Y, et al. High performance Zn-Sn-O thin film transistors with Cu source/drain electrode [J]. Phys. Stat. Sol. RRL, 2013, 7(3):196-198.

Lee Y W, Kim S J, Lee S Y, et al. Effect of Ti/Cu source/drain on an amorphous IGZO TFT employing SiNx passivation for low data-line resistance [J]. Electrochem. Solid-State Lett., 2012, 15(4):H126-H129.

Park J S, Kim T S, Son K S, et al. Ti/Cu bilayer electrodes for SiNx-passivated Hf-In-Zn-O thin film transistors: Device performance and contact resistance [J]. Appl. Phys. Lett., 2010, 97(16):162105-1-3.

Liu K H, Chang T C, Wu M S, et al. Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors [J]. Appl. Phys. Lett., 2014, 104(13):133503-1-4.

Seo B H, Lee S H, Park I S, et al. Effect of nitric acid on wet etching behavior of Cu/Mo for TFT application [J]. Curr. Appl. Phys., 2011, 11(1):S262-S265.

Yang H J, Ko Y K, Soh H S, et al. A dry-patterned Cu(Mg) alloy film as a gate electrode in a thin-film transistor liquid crystal display [J]. J. Electron. Mater., 2004, 33(7):780-785.

Yun P S, Koike J. Metal reaction doping and Ohmic contact with Cu-Mn electrode on amorphous In-Ga-Zn-O semiconductor [J]. J. Electrochem. Soc., 2011, 158(10):H1034-H1040.

ASTM D 3359. Standard Test Methods for Measuring Adhesion by Tape Test [S]. ASTM International.

Lan L F, Zhao M J, Xiong N N, et al. Low-voltage high-stability indium-zinc oxide thin-film transistor gated by anodized neodymium-doped aluminum [J]. IEEE Electron. Dev. Lett., 2012, 33(6):827-829.

Zhao M J, Lan L F, Xu H, et al. Wet-etch method for patterning metal electrodes directly on amorphous oxide semiconductor films [J]. ECS Solid State Lett., 2012, 1(5):P82-P84.

Gao X, Aikawa S, Mitoma N, et al. Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors [J]. Appl. Phys. Lett., 2014, 105(2):023503-1-5.

Chan K Y, Tou T Y, Teo B S. Thickness dependence of the structural and electrical properties of copper films deposited by dc magnetron sputtering technique [J]. Microelectron. J., 2006, 37(7):608-612.

Chan K Y, Teo B S. Investigation into the influence of direct current (DC) power in the magnetron sputtering process on the copper crystallite size [J]. Microelectron. J., 2007, 38(1):60-62

Chan K Y, Teo B S. Sputtering power and deposition pressure effect on the electrical and structural properties of copper thin films [J]. J. Mater. Sci., 2005, 40(22):5971-5981.

Yin M, Wu C K, Lou Y B, et al. Copper oxide nanocrystals [J]. J. Am. Chem. Soc., 2005, 127(26):9506-9511.

Akimoto K, Shima Y, Jincho M, et al. Channel-etched c-axis aligned crystalline oxide semiconductor FET using Cu wiring [J]. SID Symposium Digest of Technical, 2014, 45(1):465-468.

Xu H, Lan L F, Xu M, et al. High performance indium-zinc-oxide thin-film transistors fabricated with a back-channel-etch-technique [J]. Appl. Phys. Lett., 2011, 99(25):253501-1-4.

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