透明导电薄膜ITO对浅面浮雕VCSEL的影响

李秀山; 宁永强; 张星; 贾鹏; 秦莉; 刘云; 王立军

doi:10.3788/fgxb20153608.0930

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透明导电薄膜ITO对浅面浮雕VCSEL的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 透明导电薄膜ITO对浅面浮雕VCSEL的影响
- Effect of Indium Tin Oxide as Transparent Conductive Layer on Shallow Surface Relief VCSEL
- 发光学报 2015年36卷第8期页码：930-934
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所, 吉林长春 130033
  2. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61234004,51172225,61204056,61376070,61474118,61176045,61204055)();吉林省科技厅项目(
- DOI：10.3788/fgxb20153608.0930
  中图分类号： TN248.4
- 纸质出版日期：2015-8-3，
  
  收稿日期：2015-3-7，
  
  修回日期：2015-4-12，
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李秀山, 宁永强, 张星等. 透明导电薄膜ITO对浅面浮雕VCSEL的影响[J]. 发光学报, 2015,36(8): 930-934

LI Xiu-shan, NING Yong-qiang, ZHANG Xing etc. Effect of Indium Tin Oxide as Transparent Conductive Layer on Shallow Surface Relief VCSEL[J]. Chinese Journal of Luminescence, 2015,36(8): 930-934
李秀山, 宁永强, 张星等. 透明导电薄膜ITO对浅面浮雕VCSEL的影响[J]. 发光学报, 2015,36(8): 930-934 DOI： 10.3788/fgxb20153608.0930.

LI Xiu-shan, NING Yong-qiang, ZHANG Xing etc. Effect of Indium Tin Oxide as Transparent Conductive Layer on Shallow Surface Relief VCSEL[J]. Chinese Journal of Luminescence, 2015,36(8): 930-934 DOI： 10.3788/fgxb20153608.0930.

摘要

对于顶面出光的浅面浮雕VCSEL结构

有源区的电流密度分布的不均性制约着单模稳定性的提高.为此

提出了一种新型结构:氧化铟锡透明导电薄膜(ITO)浅面浮雕VCSEL.该结构不仅能够增大高阶模式的阈值增益

还能够提高基模的增益

实现基模对高阶模式的稳定抑制.研究了ITO的厚度对阈值增益的影响及ITO对VCSEL有源区电流密度分布的影响.研究结果表明:在ITO的厚度为半波长的整数倍时

基模对高阶模式的限制作用最强;ITO通过改善VCSEL有源区的电流密度分布

达到了增大基模的增益和降低高阶模式增益的目的

同时还降低了串联电阻和外电压.

Abstract

The mode stability of shallow surface relief vertical cavity surface emitting laser (VCSEL) is constrained by the nonuniform current density distribution in the active region. In order to solve this problem

a new type of structure was put forward

in which indium tin oxide (ITO) transparent conductive layer was employed in shallow surface relief VCSEL. This structure not only can increase the threshold gain of the higher-order modes but also can improve the gain of fundamental model and strengthen the suppressive effect of fundamental mode on higher order mode. The influence of the ITO thickness on the threshold gain and the effect of ITO on the current density distribution in active region are studied. It is found that the suppressive effect of fundamental mode on higher order mode is strongest when the thickness of ITO is integral multiples of the half wavelength. The gain of fundamental mode increases and the gain of higher order decreases with the improving of the current density distribution in the active region of VCSEL

and at the same time

the series resistance and the voltage are also reduced.

关键词

垂直腔面发射半导体激光器透明导电薄膜浅面浮雕单模

Keywords

VCSELITO filmsurface reliefsingle mode

references

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53 Gbit/s高速单模940 nm垂直腔面发射激光器