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1. 北京科技大学数理学院 物理系 北京,100083
2. 中国科学院纳米器件与应用重点实验室 中国科学院苏州纳米技术与纳米仿生研究所, 江苏 苏州 215123
纸质出版日期:2015-8-3,
收稿日期:2015-4-24,
修回日期:2015-7-9,
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郑新和, 夏宇, 刘三姐等. GaNAs基超晶格太阳电池的分子束外延生长与器件特性[J]. 发光学报, 2015,36(8): 923-929
ZHENG Xin-he, XIA Yu, LIU San-jie etc. MBE Growth of GaNAs-based Superlattice Solar Cells and Device Properties[J]. Chinese Journal of Luminescence, 2015,36(8): 923-929
郑新和, 夏宇, 刘三姐等. GaNAs基超晶格太阳电池的分子束外延生长与器件特性[J]. 发光学报, 2015,36(8): 923-929 DOI: 10.3788/fgxb20153608.0923.
ZHENG Xin-he, XIA Yu, LIU San-jie etc. MBE Growth of GaNAs-based Superlattice Solar Cells and Device Properties[J]. Chinese Journal of Luminescence, 2015,36(8): 923-929 DOI: 10.3788/fgxb20153608.0923.
采用分子束外延(MBE)生长技术生长了周期厚度不同的1 eV吸收带边的GaN
0.03
As
0.97
/In
0.09
Ga
0.91
As应变补偿短周期超晶格(SPSL).高分辨率X射线衍射(HRXRD)测量结果显示
当周期厚度从6 nm增加到20 nm时
超晶格的结晶质量明显改善.然而
当周期厚度继续增加时
超晶格品质劣化.对超晶格周期良好的样品通过退火优化
获得了具有低温光致发光现象的高含N量GaNAs/InGaAs超晶格
吸收带边位于1 eV附近.使用10个周期的GaNAs/InGaAs超晶格(10 nm/10 nm)和GaAs组成的p-i-n太阳电池的短路电流达到10.23 mA/cm
2
.经聚光测试获得的饱和电流密度、二极管理想因子与由电池暗态电流-电压曲线得到的结果一致.
Period thickness-dependent GaNAs/InGaAs short-period superlattice and solar cells with an absorption edge of around 1 eV were grown by MBE. High-resolution X-ray diffraction (HRXRD) measurements indicate that the crystalline quality of SPSL is improved while the period thickness increases from 6 nm to 20 nm. However
when the period further rises
the period repeatability and interface quality of SPSL degrade. By using a proper thickness and optimization of thermal annealing
good optical properties of SPSL with higher N content in the superlattice are achieved. The samples show an absorption edge of around 1 eV. The p-i-n solar cell using the optimized SPSL as the active region was fabricated. The short-circuit current density of the device reaches 10.23 mA/cm
2
. The ideality factor extrapolated by concentrator test of the p-i-n soalr cells is in good agreement with that of
J-V
curves under darkness.
GaNAs超晶格太阳电池分子束外延生长
GaNAssuperlatticesolar cellsMBE
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