GaNAs基超晶格太阳电池的分子束外延生长与器件特性

郑新和; 夏宇; 刘三姐; 王瑾; 侯彩霞; 王乃明; 卢建娅; 李宝吉

doi:10.3788/fgxb20153608.0923

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GaNAs基超晶格太阳电池的分子束外延生长与器件特性

器件制备及器件物理 | 更新时间：2020-08-12

- GaNAs基超晶格太阳电池的分子束外延生长与器件特性
- MBE Growth of GaNAs-based Superlattice Solar Cells and Device Properties
- 发光学报 2015年36卷第8期页码：923-929
- 作者机构：
  
  1. 北京科技大学数理学院物理系北京,100083
  2. 中国科学院纳米器件与应用重点实验室中国科学院苏州纳米技术与纳米仿生研究所, 江苏苏州 215123
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61274134)();上海空间电源研究所项目(Y1EAQ31001)资助()
- DOI：10.3788/fgxb20153608.0923
  中图分类号： TM914.4
- 纸质出版日期：2015-8-3，
  
  收稿日期：2015-4-24，
  
  修回日期：2015-7-9，
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郑新和, 夏宇, 刘三姐等. GaNAs基超晶格太阳电池的分子束外延生长与器件特性[J]. 发光学报, 2015,36(8): 923-929

ZHENG Xin-he, XIA Yu, LIU San-jie etc. MBE Growth of GaNAs-based Superlattice Solar Cells and Device Properties[J]. Chinese Journal of Luminescence, 2015,36(8): 923-929
郑新和, 夏宇, 刘三姐等. GaNAs基超晶格太阳电池的分子束外延生长与器件特性[J]. 发光学报, 2015,36(8): 923-929 DOI： 10.3788/fgxb20153608.0923.

ZHENG Xin-he, XIA Yu, LIU San-jie etc. MBE Growth of GaNAs-based Superlattice Solar Cells and Device Properties[J]. Chinese Journal of Luminescence, 2015,36(8): 923-929 DOI： 10.3788/fgxb20153608.0923.

摘要

采用分子束外延(MBE)生长技术生长了周期厚度不同的1 eV吸收带边的GaN

0.03

0.97

/In

0.09

0.91

As应变补偿短周期超晶格(SPSL).高分辨率X射线衍射(HRXRD)测量结果显示

当周期厚度从6 nm增加到20 nm时

超晶格的结晶质量明显改善.然而

当周期厚度继续增加时

超晶格品质劣化.对超晶格周期良好的样品通过退火优化

获得了具有低温光致发光现象的高含N量GaNAs/InGaAs超晶格

吸收带边位于1 eV附近.使用10个周期的GaNAs/InGaAs超晶格(10 nm/10 nm)和GaAs组成的p-i-n太阳电池的短路电流达到10.23 mA/cm

.经聚光测试获得的饱和电流密度、二极管理想因子与由电池暗态电流-电压曲线得到的结果一致.

Abstract

Period thickness-dependent GaNAs/InGaAs short-period superlattice and solar cells with an absorption edge of around 1 eV were grown by MBE. High-resolution X-ray diffraction (HRXRD) measurements indicate that the crystalline quality of SPSL is improved while the period thickness increases from 6 nm to 20 nm. However

when the period further rises

the period repeatability and interface quality of SPSL degrade. By using a proper thickness and optimization of thermal annealing

good optical properties of SPSL with higher N content in the superlattice are achieved. The samples show an absorption edge of around 1 eV. The p-i-n solar cell using the optimized SPSL as the active region was fabricated. The short-circuit current density of the device reaches 10.23 mA/cm

. The ideality factor extrapolated by concentrator test of the p-i-n soalr cells is in good agreement with that of

J-V

curves under darkness.

关键词

GaNAs超晶格太阳电池分子束外延生长

Keywords

GaNAssuperlatticesolar cellsMBE

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