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1. 电子科技大学 电子薄膜与集成器件国家重点实验室, 四川 成都 610054
2. 电子科技大学 信息与软件工程学院,四川 成都,610054
3. 电子科技大学 计算机科学与工程学院,四川 成都,610054
纸质出版日期:2015-8-3,
收稿日期:2015-5-28,
修回日期:2015-7-29,
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刘浩, 邓宏, 韦敏等. 氧化镓薄膜的制备及其日盲紫外探测性能研究[J]. 发光学报, 2015,36(8): 906-911
LIU Hao, DENG Hong, WEI Min etc. Preparation and Ultraviolet Detection Performance of Ga<sub>2</sub>O<sub>3</sub> Thin Films[J]. Chinese Journal of Luminescence, 2015,36(8): 906-911
刘浩, 邓宏, 韦敏等. 氧化镓薄膜的制备及其日盲紫外探测性能研究[J]. 发光学报, 2015,36(8): 906-911 DOI: 10.3788/fgxb20153608.0906.
LIU Hao, DENG Hong, WEI Min etc. Preparation and Ultraviolet Detection Performance of Ga<sub>2</sub>O<sub>3</sub> Thin Films[J]. Chinese Journal of Luminescence, 2015,36(8): 906-911 DOI: 10.3788/fgxb20153608.0906.
采用射频磁控溅射方法在蓝宝石单晶衬底上沉积氧化镓(Ga
2
O
3
)薄膜
并通过光刻剥离工艺(Lift-off)制备了金属-半导体-金属结构的Ga
2
O
3
日盲紫外探测器.对不同温度下沉积的Ga
2
O
3
薄膜分析表明
在800 ℃下获得的薄膜结晶质量最好
薄膜的导电性则随着沉积温度的上升先增大后减小.在800 ℃制备的-Ga
2
O
3
薄膜的可见光透光率大于90%
光学吸收边在255 nm附近.在10 V偏压下
探测器的暗电流约为1 nA
光电流达800 nA
对紫外光响应迅速.器件的响应度达到0.3 A/W
260 nm波长处的响应度是290 nm波长对应响应度的40倍
可实现日盲紫外波段的探测.
Gallium oxide(Ga
2
O
3
) thin films were depsited by radio frequency magnetron sputtering on sapphire(0001) substrates with a range of substrate temperatures from 500 to 1 000 ℃. The norphological characteristics
optical bandgaps
electrical properties and photoresponsivity of the grown thin films were researched.With the increasing of the growth temperature
the crystallinity and conductivity of the films increase at first and then decrease slightly. Ultraviolet-visible spectra indicate that the transmittance of -Ga
2
O
3
film depsited on 800 ℃ is over than 90%
and it's absorption edge is located at about 255 nm
meaning that the optical bandgap was about 4.8 eV. The metal-semiconductor-metal photodetector based on -Ga
2
O
3
film shows dark current of ~1 nA and photocurrent of ~800 nA under 254 nm light illumination at 10 bias voltage. The maximum responsivity of the photodetector is 0.3 A/W at 260 nm
40 times as much as the responsivity at 290 nm.
&beta-Ga2O3射频磁控溅射紫外探测
&beta-Ga2O3RF magnetron sputteringUV detector
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Ramana C V, Rubio E J, Barraza C D, et al. Chemical boding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films [J]. J. Appl. Phys., 2014, 115(4):043508-1-7.
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