2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩(C8-BTBT)与MoS2界面的能级匹配与薄膜生长

吕路; 牛冬梅; 谢海鹏; 曹宁通; 高永立

doi:10.3788/fgxb20153608.0875

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2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩(C8-BTBT)与MoS₂界面的能级匹配与薄膜生长

材料合成及性能 | 更新时间：2020-08-12

- 2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩(C8-BTBT)与MoS₂界面的能级匹配与薄膜生长
- Energy Level Bending and Molecular Packing Mode of 2,7-diocty[1]benzothieno[3,2-b] benzothiophene(C8-BTBT) on MoS₂
- 发光学报 2015年36卷第8期页码：875-881
- 作者机构：
  
  1. 中南大学先进材料超微结构与超快过程研究所,湖南长沙,410083
  2. Department of Physics and Astronomy, University of Rochester,, 27 Rochester,USA,NY146
- 作者简介：
- 基金信息：
  
  国家自然科学基金(51173205,61306085,11334014)资助项目()
- DOI：10.3788/fgxb20153608.0875
  中图分类号： O46
- 纸质出版日期：2015-8-3，
  
  收稿日期：2015-4-29，
  
  修回日期：2015-6-9，
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吕路, 牛冬梅, 谢海鹏等. 2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩(C8-BTBT)与MoS2界面的能级匹配与薄膜生长[J]. 发光学报, 2015,36(8): 875-881

LYU Lu, NIU Dong-mei, XIE Hai-peng etc. Energy Level Bending and Molecular Packing Mode of 2,7-diocty[1]benzothieno[3,2-b] benzothiophene(C8-BTBT) on MoS2[J]. Chinese Journal of Luminescence, 2015,36(8): 875-881
吕路, 牛冬梅, 谢海鹏等. 2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩(C8-BTBT)与MoS2界面的能级匹配与薄膜生长[J]. 发光学报, 2015,36(8): 875-881 DOI： 10.3788/fgxb20153608.0875.

LYU Lu, NIU Dong-mei, XIE Hai-peng etc. Energy Level Bending and Molecular Packing Mode of 2,7-diocty[1]benzothieno[3,2-b] benzothiophene(C8-BTBT) on MoS2[J]. Chinese Journal of Luminescence, 2015,36(8): 875-881 DOI： 10.3788/fgxb20153608.0875.

摘要

结合紫外光电子能谱(UPS)、X射线光电子能谱(XPS)和原子力显微镜(AFM)等实验手段系统研究了C8-BTBT沉积在层状MoS

基底上的界面能级匹配、薄膜生长和分子取向.研究发现C8-BTBT分子竖直生长在MoS

上

生长过程中界面的真空能级(VL)、最高占据态轨道(HOMO)和电离能(IP)都出现了非常规的弯曲现象.这种能级弯曲行为可归因于直立分子从界面相到体相的转变过程中

其分子倾斜角(

)存在一定的渐变

这种渐变会在沿表面法线方向诱导出一系列的层间电偶极

最终导致能级的弯曲.同时

的变化也会改变薄膜的表面极化强度

引起IP的逐渐减小.能级的弯曲在界面处形成类P-N结的效应会对C8-BTBT基电子器件的性能有很大的影响.

Abstract

The energy level alignment

film growth and molecular orientation of C8-BTBT on MoS

were studied by ultraviolet photoemission spectroscopy (UPS)

X-ray photoemission spectroscopy (XPS) and atomic force microscopy (AFM). The molecules adopt standing-up orientation on MoS

and the island growth mood were confirmed. The ionization potential (IP) decrease and highest occupied orbital (HOMO) down-shift were observed as the film thickness increased. IP decrease is ascribed to the gradual increase of the surface electric dipole pointing inwards when the molecular tilt angle (

) about the substrate normal decreases with the increasing of film thickness. The energy level shift results in an analogy P-N junction effect

which provides important guidance for C8-BTBT based electronic device design.

关键词

光电子能谱C8-BTBT能级匹配分子取向薄膜生长

Keywords

photoemission spectroscopy (PES)C8-BTBTenergy level alignmentmolecular orientationfilm growth

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