Sr-F共掺杂的SnO2基透明导电薄膜

吴绍航; 张楠; 郭晓阳; 蒋大鹏; 刘星元

doi:10.3788/fgxb20153607.0829

您当前的位置：

首页 >

文章列表页 >

Sr-F共掺杂的SnO₂基透明导电薄膜

器件制备及器件物理 | 更新时间：2020-08-12

- Sr-F共掺杂的SnO₂基透明导电薄膜
- Sr-F Codoped SnO₂ Transparent Conductive Film
- 发光学报 2015年36卷第7期页码：829-833
- 作者机构：
  
  1. 中国科学院大学北京,100049
  2. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
  
  国家自然科学基金(51102228,61106057)();吉林省科技发展计划(20140520119J)资助项目()
- DOI：10.3788/fgxb20153607.0829
  中图分类号： O484.4
- 纸质出版日期：2015-7-3，
  
  网络出版日期：2015-5-8，
  
  收稿日期：2015-4-9，
  
  修回日期：2015-5-6，
扫描看全文
吴绍航, 张楠, 郭晓阳等. Sr-F共掺杂的SnO2基透明导电薄膜[J]. 发光学报, 2015,36(7): 829-833

WU Shao-hang, ZHANG Nan, GUO Xiao-yang etc. Sr-F Codoped SnO2 Transparent Conductive Film[J]. Chinese Journal of Luminescence, 2015,36(7): 829-833
吴绍航, 张楠, 郭晓阳等. Sr-F共掺杂的SnO2基透明导电薄膜[J]. 发光学报, 2015,36(7): 829-833 DOI： 10.3788/fgxb20153607.0829.

WU Shao-hang, ZHANG Nan, GUO Xiao-yang etc. Sr-F Codoped SnO2 Transparent Conductive Film[J]. Chinese Journal of Luminescence, 2015,36(7): 829-833 DOI： 10.3788/fgxb20153607.0829.

摘要

利用离子源辅助的电子束热蒸发技术研制了高性能的Sr-F共掺杂SnO

(SFTO)基透明导电薄膜。所制备的SFTO薄膜具有良好的导电性和透过率

电阻率低于3.910

-3

380~2 500 nm波段的平均透过率大于85%

功函数约为5.10 eV。SFTO透明导电薄膜为非晶态薄膜

具有较好的表面平整度(

1.5 nm)。与工业上F掺杂SnO

薄膜的衬底温度(

450 ℃)相比

本文所用的衬底温度仅为300 ℃

有望直接将SnO

基透明导电非晶薄膜制备到柔性的塑料(PI、PAR或PCO)衬底上以获得性能良好的柔性电极。

Abstract

Sr-F codoped SnO

(SFTO) transparent conductive oxide films were prepared by ion-assisted electron beam deposition at a low temperature. The films show electrical resistivity of less than 3.910

-3

high average optical transmittance of 85% from 380 nm to 2 500 nm

and high work function of about 5.1 eV. The films are amorphous and have favorable surface morphology with average roughness of about 1.5 nm. The deposition temperature of SFTO film is 300 ℃

which is much lower than that of FTO products. SFTO transparent conductive amorphous thin film can be expected to be directly prepared on flexible plastic (PI

PAR or PCO) substrate

in order to obtain flexible electrodes with good performance.

关键词

透明导电薄膜无铟SnO2半导体掺杂

Keywords

transparent conductive filmnon-indiumSnO2semiconductor doping

references

Tang C W, Vanslyke S A. Organic electroluminescent diodes [J]. Appl. Phys. Lett., 1987, 51(12):913-915.

Major S, Chopra K L. Indium-doped zinc oxide films as transparent electrodes for solar cells [J]. Sol. Energy Mater., 1988, 17(5):319-327.

Tang C W. Two-layer organic photovoltaic cell [J]. Appl. Phys. Lett., 1986, 48(2):183-185.

Xiang C, Koo W, So F, et al. A systematic study on efficiency enhancements in phosphorescent green, red and blue microcavity organic light emitting devices [J]. Light: Sci. Appl., 2013, 2(6):e74.

Hoffman R L, Norris B J, Wager J F. ZnO-based transparent thin-film transistors [J]. Appl. Phys. Lett., 2003, 82(5):733-735.

Song Q M, Lyu M C, Tan X, et al. Influence of H/Al co-doping on eletrical and optical properties and crystal structure of ZnO-based transparent conducting films [J]. Chin. J. Lumin.(发光学报), 2014, 35(4):393-398 (in Chinese).

Gu W, Xu T, Shi J F, et al. Effect of the film thickness on the performance of GZO transparent conductive layer and LEDs with GZO electrode [J]. Chin. J. Lumin.(发光学报), 2013, 34(8):1022-1027 (in Chinese).

Lewis B G, Paine D C. Applications and processing of transparent conducting oxides [J]. MRS Bull., 2000, 25(8):22-27.

Ellmer K. Past achievements and future challenges in the development of optically transparent electrodes [J]. Nat. Photon., 2012, 6(12):808-816.

Helander M G, Wang Z B, Qiu J, et al. Chlorinated indium tin oxide electrodes with high work function for organic device compatibility [J]. Science, 2011, 332(6032):944-947.

Liao Y, Lu Q, Fan Y, et al. Manganese-doped indium oxide and its application in organic light-emitting diodes [J]. Appl. Phys. Lett., 2011, 99(2):023302-1-3.

Adamovich V I, Cordero S R, Djurovich P I, et al. New charge-carrier blocking materials for high efficiency OLEDs [J]. Org. Electron., 2003, 4(2):77-87.

Greiner M T, Helander M G, Tang W M, et al. Universal energy-level alignment of molecules on metal oxides [J]. Nat. Mater., 2012, 11(1):76-81.

Shen Y, Jacobs D, Malliaras G, et al. Modification of indium tin oxide for improved hole injection in organic light emitting diodes [J]. Adv. Mater., 2001, 13(16):1234-1238.

Lo M F, Ng T W, Mo H W, et al. Direct threat of a UV-ozone treated indium-tin-oxide substrate to the stabilities of common organic semiconductors [J]. Adv. Funct. Mater., 2013, 23(13):1718-1723.

Minami T. New n-type transparent conducting oxides [J]. MRS Bull., 2000, 25(8):38-44.

Andersson A, Johansson N, Brms P, et al. Fluorine tin oxide as an alternative to indium tin oxide in polymer LEDs [J]. Adv. Mater., 1998, 10(11):859-863.

Wu S, Li Y, Luo J, et al. Pr and F co-doped SnO2 transparent conductive films with high work function deposited by ion-assisted electron beam evaporation [J]. Opt. Express, 2014, 22(4):4731-4737.

Burstein E. Anomalous optical absorption limit in InSb [J]. Phys. Rev., 1954, 93(3):632-633.

Moss T S. The interpretation of the properties of indium antimonide [J]. Proc. Phys. Soc. B, 1954, 67(10):775-782.

Coutts T J, Young D L, Li X. Characterization of transparent conducting oxides [J]. MRS Bull., 2000, 25(8):58-65.

Consonni V, Rey G, Roussel H, et al. Preferential orientation of fluorine-doped SnO2 thin films: The effects of growth temperature [J]. Acta Mater., 2013, 61(1):22-31.

Zhang D H, Ma H L. Scattering mechanisms of charge carriers in transparent conducting oxide films [J]. Appl. Phys. A, 1996, 62(5):487-492.

Hosono H, Yasukawa M, Kawazoe H. Novel oxide amorphous semiconductors: Transparent conducting amorphous oxides [J]. J. Non-Cryst. Solids, 1996, 203:334-344.

Nomura K, Ohta H, Takagi A, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J]. Nature, 2004, 432(7016):488-492.

Macdonald W A. Engineered films for display technologies [J]. J. Mater. Chem., 2004, 14(1):4-10.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

2D/3D混合Sn基钙钛矿/SnO₂异质结光探测器

SnO₂∶Zn纳米晶光阳极对染料敏化太阳能电池光电性能的影响

CH₃NH₃PbBr₃表面修饰对SnO₂基光电探测器性能的影响

基于Sb₂O₃/Ag/Sb₂O₃叠层透明导电薄膜的自组装沟道透明薄膜晶体管

基于旋涂法和电子束蒸发法制备的V₂O₅/Ag/V₂O₅叠层透明导电薄膜