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1. 中国科学院大学 北京,100049
2. 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所,吉林 长春,130033
纸质出版日期:2015-7-3,
网络出版日期:2015-5-8,
收稿日期:2015-4-9,
修回日期:2015-5-6,
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吴绍航, 张楠, 郭晓阳等. Sr-F共掺杂的SnO<sub>2</sub>基透明导电薄膜[J]. 发光学报, 2015,36(7): 829-833
WU Shao-hang, ZHANG Nan, GUO Xiao-yang etc. Sr-F Codoped SnO<sub>2</sub> Transparent Conductive Film[J]. Chinese Journal of Luminescence, 2015,36(7): 829-833
吴绍航, 张楠, 郭晓阳等. Sr-F共掺杂的SnO<sub>2</sub>基透明导电薄膜[J]. 发光学报, 2015,36(7): 829-833 DOI: 10.3788/fgxb20153607.0829.
WU Shao-hang, ZHANG Nan, GUO Xiao-yang etc. Sr-F Codoped SnO<sub>2</sub> Transparent Conductive Film[J]. Chinese Journal of Luminescence, 2015,36(7): 829-833 DOI: 10.3788/fgxb20153607.0829.
利用离子源辅助的电子束热蒸发技术研制了高性能的Sr-F共掺杂SnO
2
(SFTO)基透明导电薄膜。所制备的SFTO薄膜具有良好的导电性和透过率
电阻率低于3.910
-3
cm
380~2 500 nm波段的平均透过率大于85%
功函数约为5.10 eV。SFTO透明导电薄膜为非晶态薄膜
具有较好的表面平整度(
R
q
<
1.5 nm)。与工业上F掺杂SnO
2
薄膜的衬底温度(
>
450 ℃)相比
本文所用的衬底温度仅为300 ℃
有望直接将SnO
2
基透明导电非晶薄膜制备到柔性的塑料(PI、PAR或PCO)衬底上以获得性能良好的柔性电极。
Sr-F codoped SnO
2
(SFTO) transparent conductive oxide films were prepared by ion-assisted electron beam deposition at a low temperature. The films show electrical resistivity of less than 3.910
-3
cm
high average optical transmittance of 85% from 380 nm to 2 500 nm
and high work function of about 5.1 eV. The films are amorphous and have favorable surface morphology with average roughness of about 1.5 nm. The deposition temperature of SFTO film is 300 ℃
which is much lower than that of FTO products. SFTO transparent conductive amorphous thin film can be expected to be directly prepared on flexible plastic (PI
PAR or PCO) substrate
in order to obtain flexible electrodes with good performance.
透明导电薄膜无铟SnO2半导体掺杂
transparent conductive filmnon-indiumSnO2semiconductor doping
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