单层密集ZnO纳米棒阻变器件的导电机制

王雪亮; 徐建萍; 石少波; 张晓松; 张旭光; 赵相国; 石鑫; 李淑彬; 李岚

doi:10.3788/fgxb20153607.0795

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单层密集ZnO纳米棒阻变器件的导电机制

器件制备及器件物理 | 更新时间：2020-08-12

- 单层密集ZnO纳米棒阻变器件的导电机制
- Current Conduction Mechanism of The Resistive Memory Device with Single-layered Dense ZnO Nanorod Arrays
- 发光学报 2015年36卷第7期页码：795-800
- 作者机构：
  
  1. 天津理工大学材料物理研究所, 光电器件与显示材料教育部重点实验室, 天津市光电显示材料与器件重点实验室天津,300386
  2. 天津职业技术师范大学理学院天津,300222
- 作者简介：
- 基金信息：
  
  863国家高技术研究发展计划(2013AA014201)();天津市自然科学基金(14JCZDJC31200,15JCYBJC16800,15JCYBJC16700)(
- DOI：10.3788/fgxb20153607.0795
  中图分类号： TN304.21
- 纸质出版日期：2015-7-3，
  
  收稿日期：2015-4-15，
  
  修回日期：2015-5-13，
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王雪亮, 徐建萍, 石少波等. 单层密集ZnO纳米棒阻变器件的导电机制[J]. 发光学报, 2015,36(7): 795-800

WANG Xue-liang, XU Jian-ping, SHI Shao-bo etc. Current Conduction Mechanism of The Resistive Memory Device with Single-layered Dense ZnO Nanorod Arrays[J]. Chinese Journal of Luminescence, 2015,36(7): 795-800
王雪亮, 徐建萍, 石少波等. 单层密集ZnO纳米棒阻变器件的导电机制[J]. 发光学报, 2015,36(7): 795-800 DOI： 10.3788/fgxb20153607.0795.

WANG Xue-liang, XU Jian-ping, SHI Shao-bo etc. Current Conduction Mechanism of The Resistive Memory Device with Single-layered Dense ZnO Nanorod Arrays[J]. Chinese Journal of Luminescence, 2015,36(7): 795-800 DOI： 10.3788/fgxb20153607.0795.

摘要

制备了一种具有多级存储效应的密集ZnO纳米棒阵列阻变存储器件

借助

I-V

曲线和荧光光谱分析了器件的电流传导机制和阻变机制

发现器件在不同的电阻态下分别属于欧姆传导和空间电荷限制电流(SCLC)传导机制。正向电场作用使纳米棒表面耗尽区的氧空位V

密度增大

完善了电子传输的导电细丝通道

器件实现了由高阻态向低阻态的转变;在反向电压作用下

导电通道断裂

器件恢复到高阻态。

Abstract

A multi-level resistive memory device based on the single-layered dense ZnO nanorod arrays was prepared. The mechanisms of current conduction and resistive switching were studied by

I-V

curve and bias dependence of fluorescence spectra. The dominant conduction mechanisms for the two resistance states are concluded to be Ohmic conduction and space-charge-limited-current (SCLC) conduction

respectively. It is considered that the oxygen vacancies density at the surface depletion region of nanorods is influenced by charge loss in defects of V

and V

. The increased oxygen vacancies density under forward bias is obtained to build the conductive paths for the electron transportation

resulting in the switching from the high resistance state to the low resistance state. The high resistance state is re-obtained with the paths broken off under reverse voltage.

关键词

ZnO纳米棒荧光光谱氧空位导电细丝通道

Keywords

ZnO nanorodsfluorescence spectraoxygen vacanciesconductive paths

references

Chang W Y, Lin C A, Wu T B, et al. Resistive switching behaviors of ZnO nanorod layers [J]. Appl. Phys. Lett., 2010, 96(24):242109-1-3.

Zhang F, Gan X Y, Li X M, et al. Realization of rectifying and resistive switching behaviors of TiO2 nanorod arrays for nonvolatile memory [J]. Electrochem. Solid. State Lett., 2011, 14(10):422-425.

Sun B, Li C M. Light-controlled resistive switching memory of multiferroic BiMnO3 nanowires array [J]. Phys. Chem. Chem. Phys., 2015, 17:6718-6721.

Yun S N, Lee J Y, Lim S, et al. Hydrothermal synthesis of Al-doped ZnO nanorod arrays on Si substrate [J]. Physica B, 2010, 405:413-419.

Cai G F, Tu J P, Gu C D, et al. Multicolor electrochromic film based on TiO2@polyaniline core/shell nanorod array [J]. J. Phys. Chem. C, 2013, 117:15967-15975.

Sun B, Li H W, Chen P, et al. Hydrothermal synthesis and resistive switching behaviour of WO3/CoWO4 core-shell nanowires [J]. Cryst. Eng. Commun., 2014, 16:9891-9895.

Liao W P, Wu J J. Efficient electron collection in hybrid polymer solar cells: In-situ-generated ZnO/Poly(3-hexylthiophene) scaffolded by a TiO2 nanorod array [J]. J. Phys. Chem. Lett., 2013, 4:1983-1988.

Lee S C, Hu Q L, Yoon T S, et al. Analog and bipolar resistive switching in pn junction of n-type ZnO nanowires on p-type Si substrate [J]. J. Appl. Phys., 2013, 114:064502-1-6.

Park S, Lee J H, Kim T G, et al. Resistive switching characteristics of sol-gel based ZnO nanorods fabricated on flexible substrates [J]. Phys. Stat. Sol. RRL, 2013, 7(7):493-496.

Valanarasu S, Kathalingam A, Karunakaran M, et al. Improved memory effect of ZnO nanorods embedded in an insulating polymethylmethacrylate Layer [J]. J. Nanosci. Nanotechnol., 2015, 15:1416-1420.

Qi J, Olmedo M, Liu J L, et al. Resistive switching in single epitaxial zno nanoislands [J]. ACS Nano, 2012, 6:1051-1058.

Pacholski C, Kornowski A, Weller H. Self-assembly of ZnO: From nanodots to nanorods [J]. Angew. Chem. Int. Edit., 2002, 41:1188-1191.

Mohemaiti M, Yimit A, Turahun Y. Zinc oxide thin film/tin-diffused optical waveguide sensor for chlorobenzene gas detection [J]. Chin. J. Anal. Chem.(分析化学), 2011, 39(1):120-124 (in Chinese).

Yao I C, Lee D Y, Lin P, et al. Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices [J]. Nanotechnology, 2012, 23(14):145201-1-5.

Son D I, Park D H, Kim T W, et al. Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly(methylmethacrylate) polymer layer [J]. Nanotechnology, 2009, 20(19):195203-1-6.

Tseng Z L, Kao P C, Chu S Y, et al. Electrical bistability in hybrid ZnO nanorod/polymethylmethacrylate heterostructures [J]. Appl. Phys. Lett., 2010, 97(21):212103-1-3.

Chen J Y, Hsin C L, Chen L J, et al. Dynamic evolution of conducting nanofilament in resistive switching memories [J]. Nano Lett., 2013, 13:3671-3677.

Ghosh M, Ningthoujam R S, Vatsa R K, et al. Role of ambient air on photoluminescence and electrical conductivity of assembly of ZnO nanoparticles [J]. J. Appl. Phys., 2011, 110(5):054309-1-6.

Soci C, Zhang A, Wang D, et al. ZnO nanowire UV photodetectors with high internal gain [J]. Nano Lett., 2007, 7:1003-1009.

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