高效率GaN基高压LED芯片的制备及COB封装

黄晓升; 黄华茂; 王洪; 李静

doi:10.3788/fgxb20153606.0692

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高效率GaN基高压LED芯片的制备及COB封装

器件制备及器件物理 | 更新时间：2020-08-12

- 高效率GaN基高压LED芯片的制备及COB封装
- High Efficiency GaN-based High-voltage Light-emitting Diode Chips and Its Chip-on-board Packaging
- 发光学报 2015年36卷第6期页码：692-698
- 作者机构：
  
  华南理工大学物理与光电学院广东省光电工程技术研究开发中心,广东广州,510640
- 作者简介：
- 基金信息：
  
  863国家高技术研究发展计划(2014AA032609)();广东省战略性新兴产业发展专项资金(2011A081301004,2012A080302003,2012A0
- DOI：10.3788/fgxb20153606.0692
  中图分类号： TN304;TN383+.1
- 纸质出版日期：2015-6-3，
  
  收稿日期：2015-3-16，
  
  修回日期：2015-4-20，
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黄晓升, 黄华茂, 王洪等. 高效率GaN基高压LED芯片的制备及COB封装[J]. 发光学报, 2015,36(6): 692-698

HUANG Xiao-sheng, HUANG Hua-mao, WANG Hong etc. High Efficiency GaN-based High-voltage Light-emitting Diode Chips and Its Chip-on-board Packaging[J]. Chinese Journal of Luminescence, 2015,36(6): 692-698
黄晓升, 黄华茂, 王洪等. 高效率GaN基高压LED芯片的制备及COB封装[J]. 发光学报, 2015,36(6): 692-698 DOI： 10.3788/fgxb20153606.0692.

HUANG Xiao-sheng, HUANG Hua-mao, WANG Hong etc. High Efficiency GaN-based High-voltage Light-emitting Diode Chips and Its Chip-on-board Packaging[J]. Chinese Journal of Luminescence, 2015,36(6): 692-698 DOI： 10.3788/fgxb20153606.0692.

摘要

为提升GaN基高压LED芯片的出光性能

优化了芯片发光单元之间隔离沟槽的宽度。当隔离沟槽宽度为20 m时

芯片的电学性能和光学性能最优。当注入电流为20 mA时

正向电压为50.72 V

输出光功率为373.64 mW

电光转换效率为36.83%。采用镜面铝基板和陶瓷基板进行了4颗芯片串联形式的COB封装。镜面铝基板的热导率和反射率均高于陶瓷基板

可提升HV-LED器件在大注入电流和高温时的发光性能。当注入电流为20 mA且基板温度为20 ℃时

镜面铝基板封装的HV-LED器件的正向电压是198.9 V

发光效率达122.2 lm/W。

Abstract

In order to enhance the light-output performance of GaN-based high-voltage light-emitting diodes (HV-LEDs)

the width of isolation trench between light-emission cells was optimized. The electrical and optical performance is the best while the width is 20 m. When the injection current is 20 mA

the forward voltage is 50.72 V

the light-output power is 373.64 mW

and the electro-optical conversion efficiency is 36.83%. Then

four chips were connected in series and packaged in reflective aluminum substrate or ceramic substrate using chip-on-board (COB) technology. Since the thermal conductivity and reflectivity are higher for reflective aluminum substrate comparing to ceramic substrate

the packaged HV-LEDs with reflective aluminum substrate show better light-output performance at a high injection current or a high temperature. On condition that the injection current is 20 mA and the substrate temperature is 20 ℃

the forward voltage and the light-output efficiency of HV-LEDs packaged using reflective aluminum substrate are 198.9 V and 122.2 lm/W

respectively.

关键词

高压LED芯片制备封装基板发光效率

Keywords

high-voltage light-emitting diodechip fabricationpackage substratelight-output efficiency

references

Wang C H, Lin D W, Lee C Y, et al. Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes [J]. IEEE Electron. Dev. Lett., 2011, 32(8):1098-1010.

Cao D, Guo Z, Liang F, et al. The preparation and performance analysis of GaN-based high-voltage DC light emitting diode [J]. Acta Phys. Sinica (物理学报), 2012, 61(13):138502-1-5 (in Chinese).

Horng R H, Shen K C, Kuo Y W, et al. Effects of cell distance on the performance of GaN high-voltage light emitting diodes [J]. ECS Solid State Lett., 2012, 1(5):R21-R23.

Wang H, Wu Y, Zhong J, et al. Fabrication of high-voltage LED chips with lateral columnar structure [J]. J. Optoelectron. Laser (光电子激光), 2013, 24(6):1906-1910 (in Chinese).

Huang H, Wang H, Huang X, et al. GaN-based high-voltage light-emitting diodes with backside reflector [J]. J. Semicond., 2014, 35(7):074013-1-5.

Ding Y, Guo W, Zhu Y, et al. Fabrication of high voltage light emitting diodes with a deep isolation groove structure [J]. J. Semicond., 2012, 33(9):094007-1-5.

Guo W, Yan W, Zhu Y, et al. Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes [J]. Chin. Phys. B, 2012, 21(12):127201-1-5.

Zhan T, Zhang Y, Li J, et al. The design and fabrication of a GaN-based monolithic light-emitting diode array [J]. J. Semicond., 2013, 34(9):094010-1-5.

Zhan T, Zhang Y, Ma J, et al. Characteristics of GaN-based high-voltage LEDs compared to traditional high power LEDs [J]. IEEE Photon. Technol. Lett., 2013, 25(9):844-847.

Bai J, Guo W, Yu X, et al. Effects of injection current on optical and electrical properties of GaN-based green high voltage LED [J]. Chin. J. Lumin.(发光学报), 2014, 35(1):101-104 (in Chinese).

Yu X, Guo W, Fan X, et al. Thermal analysis of 51 V GaN-based high voltage LED [J]. Chin. J. Lumin.(发光学报), 2014, 35(2):213-217 (in Chinese).

Chen Q, Tan D, Yu F, et al. New development of research on heat-release substrates of high-power LEDs [J]. Mater. Rev.(材料导报), 2009, 23(12):61-64 (in Chinese).

Moo W S. Thermal design of high-power LED package and system [J]. SPIE, 2006, 6355:635509-1-8.

Yin L Q, Yang L Q, Yang W Q, et al. Thermal design and analysis of multi-chip LED module with ceramic substrate [J]. Solid-State Electron., 2010, 54(12):1520-1524.

Li B, Bu L, Gan X, et al. Research on the relationship of the change in forward voltage with temperature of light emitting diode [J]. Acta Photon. Sinica (光子学报), 2003, 32(11):1349-1351 (in Chinese).

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