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华南理工大学物理与光电学院 广东省光电工程技术研究开发中心,广东 广州,510640
纸质出版日期:2015-6-3,
收稿日期:2015-3-16,
修回日期:2015-4-20,
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黄晓升, 黄华茂, 王洪等. 高效率GaN基高压LED芯片的制备及COB封装[J]. 发光学报, 2015,36(6): 692-698
HUANG Xiao-sheng, HUANG Hua-mao, WANG Hong etc. High Efficiency GaN-based High-voltage Light-emitting Diode Chips and Its Chip-on-board Packaging[J]. Chinese Journal of Luminescence, 2015,36(6): 692-698
黄晓升, 黄华茂, 王洪等. 高效率GaN基高压LED芯片的制备及COB封装[J]. 发光学报, 2015,36(6): 692-698 DOI: 10.3788/fgxb20153606.0692.
HUANG Xiao-sheng, HUANG Hua-mao, WANG Hong etc. High Efficiency GaN-based High-voltage Light-emitting Diode Chips and Its Chip-on-board Packaging[J]. Chinese Journal of Luminescence, 2015,36(6): 692-698 DOI: 10.3788/fgxb20153606.0692.
为提升GaN基高压LED芯片的出光性能
优化了芯片发光单元之间隔离沟槽的宽度。当隔离沟槽宽度为20 m时
芯片的电学性能和光学性能最优。当注入电流为20 mA时
正向电压为50.72 V
输出光功率为373.64 mW
电光转换效率为36.83%。采用镜面铝基板和陶瓷基板进行了4颗芯片串联形式的COB封装。镜面铝基板的热导率和反射率均高于陶瓷基板
可提升HV-LED器件在大注入电流和高温时的发光性能。当注入电流为20 mA且基板温度为20 ℃时
镜面铝基板封装的HV-LED器件的正向电压是198.9 V
发光效率达122.2 lm/W。
In order to enhance the light-output performance of GaN-based high-voltage light-emitting diodes (HV-LEDs)
the width of isolation trench between light-emission cells was optimized. The electrical and optical performance is the best while the width is 20 m. When the injection current is 20 mA
the forward voltage is 50.72 V
the light-output power is 373.64 mW
and the electro-optical conversion efficiency is 36.83%. Then
four chips were connected in series and packaged in reflective aluminum substrate or ceramic substrate using chip-on-board (COB) technology. Since the thermal conductivity and reflectivity are higher for reflective aluminum substrate comparing to ceramic substrate
the packaged HV-LEDs with reflective aluminum substrate show better light-output performance at a high injection current or a high temperature. On condition that the injection current is 20 mA and the substrate temperature is 20 ℃
the forward voltage and the light-output efficiency of HV-LEDs packaged using reflective aluminum substrate are 198.9 V and 122.2 lm/W
respectively.
高压LED芯片制备封装基板发光效率
high-voltage light-emitting diodechip fabricationpackage substratelight-output efficiency
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