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中国科学院苏州生物医学工程技术研究所 半导体光电子技术研究室,江苏 苏州,215163
纸质出版日期:2015-5-3,
网络出版日期:2015-4-2,
收稿日期:2014-12-12,
修回日期:2015-3-14,
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江先锋, 张丽芳, 郭栓银等. 高温硬焊料准连续半导体激光器巴条叠阵的性能研究[J]. 发光学报, 2015,36(5): 563-566
JIANG Xian-feng, ZHANG Li-fang, GUO Shuan-yin etc. Research on Performance of High Temperature Hard Solder Diode Laser Array[J]. Chinese Journal of Luminescence, 2015,36(5): 563-566
江先锋, 张丽芳, 郭栓银等. 高温硬焊料准连续半导体激光器巴条叠阵的性能研究[J]. 发光学报, 2015,36(5): 563-566 DOI: 10.3788/fgxb20153605.0563.
JIANG Xian-feng, ZHANG Li-fang, GUO Shuan-yin etc. Research on Performance of High Temperature Hard Solder Diode Laser Array[J]. Chinese Journal of Luminescence, 2015,36(5): 563-566 DOI: 10.3788/fgxb20153605.0563.
以巴条叠阵结构及封装方法为基础
研制了一组高温硬焊料准连续半导体激光器巴条叠阵
并研究了其相关的光电性能和寿命特征。结果表明
所研制的器件在200 A的工作电流下
重复频率250 Hz、脉宽200 s时
单巴峰值功率
>
200 W
50%光谱宽度
<
3 nm
电光转换效率
>
50%
寿命达到4.7110
9
shots时的功率衰减
<
15%;当工作电流为150 A时
预期寿命高达1.510
10
shots。
Based on the stack array of structure and assembly methods
a set of high temperature and hard solder quasi-continuous laser diode stack arrays were developed
and the related photo-electric performance and lifetime characteristics were studied. When the stack array is in condition of operating current 200 A
repetition frequency 250 Hz
pulse width 200 s
the FWHM is less than 3 nm
electro-optical conversion efficiency is more than 50%
peak power per bar is more than 200 W
lifetime is up to 4.7110
9
shots
and the peak power degradation is less than 15%. When the operating current is 150 A
the lifetime is up to 1.510
10
shots.
半导体激光器叠阵硬焊料准连续
diode laser arrayhard solderQCW
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Meadows B L, Amzajerdian F, Baker N R, et al. Thermal characteristics of high-power, long-pulse width, quasi-CW laser diode arrays [J]. SPIE, 2004, 5336:203-211.
Lu G G, Huang Y, Lei Z F. Studies of the degradation mechanisms in high power diode lasers[C]//2011 International Symposium on Advanced Packaging Materials (APM), Xiamen:IEEE, 2011:80-84.
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Reddy K V, Prasad J J B. Electromigration in indium thin films [J]. J. Appl. Phys., 1984, 55:1546-1550.
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Liu X S, Davis R W, Hughes L C, et al. A study on the reliability of indium solder die bonding of high power semiconductor lasers [J]. J. Appl. Phys., 2006, 100(1):103104-1-6.
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