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天津大学 电子信息工程学院 天津,300072
纸质出版日期:2015-5-3,
收稿日期:2015-2-11,
修回日期:2015-3-24,
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崔猛, 谢生, 毛陆虹等. 楔形瓣状结构对正向注入型Si-LED发光特性的影响[J]. 发光学报, 2015,36(5): 552-556
CUI Meng, XIE Sheng, MAO Lu-hong etc. Effect of Wedged Petaloid Configuration on Luminescence Characteristics of Si-LED Fabricated in Standard CMOS Process[J]. Chinese Journal of Luminescence, 2015,36(5): 552-556
崔猛, 谢生, 毛陆虹等. 楔形瓣状结构对正向注入型Si-LED发光特性的影响[J]. 发光学报, 2015,36(5): 552-556 DOI: 10.3788/fgxb20153605.0552.
CUI Meng, XIE Sheng, MAO Lu-hong etc. Effect of Wedged Petaloid Configuration on Luminescence Characteristics of Si-LED Fabricated in Standard CMOS Process[J]. Chinese Journal of Luminescence, 2015,36(5): 552-556 DOI: 10.3788/fgxb20153605.0552.
基于标准CMOS工艺的p
+
源/漏区和n阱
设计了两种楔形瓣状结构的正向注入型硅基发光二极管(Si-LED)
采用UMC 0.18 m 1P6M CMOS工艺设计制备。测试结果表明
正向注入型p
+
/n-well二极管的发射波长位于近红外波段
峰值波长在1 130 nm附近
且工作电压小于2 V
与标准CMOS电路兼容。其中
八瓣结构的Si-LED (TS2)在200 mA时的发光功率可达1 200 nW
且未出现饱和
而注入电流为40 mA时的最大功率转换效率达5.810
-6
约为四瓣结构器件(TS1)的2倍。所研制的Si-LED具有工作电压低、转换效率高等优点
有望在光互连领域得到应用。
Based on p
+
source/drain region and n-well of standard CMOS technology
two forward-injection-type Si-LEDs with different petaloid configuration were designed and fabricated by UMC 0.18 m 1P6M CMOS process. The measurement results indicate that the emission spectra of both Si-LEDs locate at near-IR region with peak wavelength around 1 130 nm
and the devices can operate properly below 2 V. When the device TS2 with eight-petal configuration is forward-biased at 200 mA
its optical power increases to 1 200 nW without saturation
and the maximum power conversion efficiency reaches up to 5.810
-6
at the current of 40 mA
which is almost double that of the device TS1 with four-petal. Due to the features of low operating voltage and high conversion efficiency
the device TS2 is highly attractive for future optoelectronic applications.
硅基发光二极管正向注入楔形结构标准CMOS工艺
Si-based light emitting diodeforward-injectionwedge configurationstandard CMOS technology
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