ZHOU Mei, ZHAO De-gang,. Effect of p-InGaN Layer Thickness on The Performance of p-i-n InGaN Solar Cells[J]. Chinese Journal of Luminescence, 2015,36(5): 534-538
ZHOU Mei, ZHAO De-gang,. Effect of p-InGaN Layer Thickness on The Performance of p-i-n InGaN Solar Cells[J]. Chinese Journal of Luminescence, 2015,36(5): 534-538 DOI: 10.3788/fgxb20153605.0534.
The effects of p-InGaN layer thickness on the performance of p-i-n structure InGaN solar cells were investigated. Through theory calculation
it is found that the conversion efficiency of InGaN solar cells decreases with the increasing of p-InGaN thickness. The poor Ohmic contact properties of metal to p-InGaN also have a negative effect on the performance of InGaN solar cells. The short-circuit current reduces obviously with the increasing of p-InGaN thickness
simultaneously the conversion efficiency of InGaN solar cells decreases. The performance of InGaN solar cell could be improved by employing a relatively thin p-InGaN layer.
关键词
InGaN太阳电池p-i-n结构
Keywords
InGaNsolar cellp-i-n structure
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