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1. 太原理工大学 新材料工程技术研究中心,山西 太原,030024
2. 太原理工大学 新材料界面科学与工程教育部重点实验室,山西 太原,030024
3. 太原理工大学 材料科学与工程学院,山西 太原,030024
4. 太原理工大学 化学化工学院,山西 太原,030024
5. 山西国光半导体照明工程研究有限公司,山西 太原,030006
纸质出版日期:2015-4-3,
收稿日期:2014-12-25,
修回日期:2015-1-14,
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李源浩, 武聪伶, 杨君礼等. 基于MoO<sub>3</sub>/Ag/MoO<sub>3</sub>透明阳极的顶发射OLED的模拟计算与制备[J]. 发光学报, 2015,36(4): 459-465
LI Yuan-hao, WU Cong-ling, YANG Jun-li etc. Simulation Calculation and Preparation of Top Emitting OLEDs with Transparent Anode of MoO<sub>3</sub>/Ag/MoO<sub>3</sub>[J]. Chinese Journal of Luminescence, 2015,36(4): 459-465
李源浩, 武聪伶, 杨君礼等. 基于MoO<sub>3</sub>/Ag/MoO<sub>3</sub>透明阳极的顶发射OLED的模拟计算与制备[J]. 发光学报, 2015,36(4): 459-465 DOI: 10.3788/fgxb20153604.0459.
LI Yuan-hao, WU Cong-ling, YANG Jun-li etc. Simulation Calculation and Preparation of Top Emitting OLEDs with Transparent Anode of MoO<sub>3</sub>/Ag/MoO<sub>3</sub>[J]. Chinese Journal of Luminescence, 2015,36(4): 459-465 DOI: 10.3788/fgxb20153604.0459.
运用传输矩阵法和正交分析法模拟计算出MoO
3
/Ag/MoO
3
透明电极的最佳厚度
采用镀膜实验验证模拟计算的准确性
制备了一系列不同MoO
3
膜厚度和Ag膜厚度的透明电极。然后
制备了一系列顶发射有机电致发光器件:铝/氟化锂(LiF)/三(8-羟基喹啉)铝(Alq
3
)/N
N'-二苯基-N
N'-(1-萘基)-1
1'-联苯-4
4'-二胺/三氧化钼(MoO
3
)/银(Ag)/三氧化钼(MoO
3
)
来进一步验证模拟计算运用在器件制备中的准确性。MoO
3
(10 nm)/Ag(10 nm)/MoO
3
(25 nm)在532 nm处的透射率达到最大值88.256%
以该透明电极制备的器件与参考器件相比
性能有了明显提高
最大亮度和最大效率分别为20 076 cd/m
2
和4.03 cd/A
提高了18.5%和56%。器件性能的提高归因于顶发射OLED器件透射率的提高和MoO
3
对空穴注入能力的提升。
The transfer matrix method and the orthogonal analysis method were used to calculate the optimum film thickness of MoO
3
/Ag/MoO
3
as a transparent anode. In order to validate the accuracy of simulation calculation
MoO
3
/Ag/MoO
3
transparent anodes with different thickness of MoO
3
and Ag films were fabricated. Then
the top emitting OLEDs with structure of Al/LiF/tris(8-hydroxyquinolinato)aluminum(Alq
3
)/N
N'-bis-(1-naphthyl)-N
N'- biphenyl-1
1'-biphenyl-4
4'-diamine(NPB)/MoO
3
/Ag/MoO
3
were fabricated to further verify the accuracy of the simulation calculation used in device fabrication. When the electrode thickness is MoO
3
(10 nm)/Ag (10 nm)/MoO
3
(25 nm)
the device reaches the most optimal performance. The maximum transmittance is 88.256% at 532 nm. And the maximum luminance and luminous efficiency are 20 076 cd/m
2
and 4.03 cd/A
which are improved by 18.5% and 56% compared with the reference device
respectively. The results demonstrate a practical way to fabricate highly efficient top emitting OLEDs.
顶发射有机电致发光器件模拟计算三氧化钼透射率
TOLEDsimulation calculationMoO3transmittance
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