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华南师范大学光电子材料与技术研究所,广东 广州,510631
纸质出版日期:2012-12-10,
收稿日期:2012-9-3,
修回日期:2012-9-19,
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宋晶晶, 张运炎, 赵芳, 郑树文, 范广涵. 量子阱数量变化对InGaN/AlGaN LED的影响[J]. 发光学报, 2012,33(12): 1368-1372
SONG Jing-jing, ZHANG Yun-yan, ZHAO Fang, ZHENG Shu-wen, FAN Guan-han. Effect of The Number of Quantum Wells on InGaN/AlGaN LED[J]. Chinese Journal of Luminescence, 2012,33(12): 1368-1372
宋晶晶, 张运炎, 赵芳, 郑树文, 范广涵. 量子阱数量变化对InGaN/AlGaN LED的影响[J]. 发光学报, 2012,33(12): 1368-1372 DOI: 10.3788/fgxb20123312.1368.
SONG Jing-jing, ZHANG Yun-yan, ZHAO Fang, ZHENG Shu-wen, FAN Guan-han. Effect of The Number of Quantum Wells on InGaN/AlGaN LED[J]. Chinese Journal of Luminescence, 2012,33(12): 1368-1372 DOI: 10.3788/fgxb20123312.1368.
采用软件理论分析的方法分析了InGaN/AlGaN量子阱数量变化对发光二极管内量子效率、电子空穴浓度分布、载流子溢出产生的影响。分析结果表明:量子阱的个数不是越多越好
LED的光学性质和量子阱的个数并不成线性关系。量子阱个数太少时
电流溢出现象较明显;而当量子阱个数太多时
极化现象明显
且会造成材料浪费。因此应根据工作电流选择合适的量子阱个数。
The optical properties of the InGaN/AlGaN light-emitting diodes (LEDs) with varied quantum well(QW) numbers are studied numerically. The simulated results show that the single quantum-well (SQW) structure has the best optical performance with small current less than 100 mA. However
the 9-QWs structure obtains higher output power and IQE than other structures when the current is larger than 700 mA
and the efficiency droop is dropped markedly from 14.10% to 5.15% at 700 mA comparing with that of the SQW structure. Therefore
9-QWs is the optimized structure for high-power LEDs. It can be explained as follows: (1) The 9-QWs structure acquires higher capacity of carrier confinement due to the smaller band bending effect and the effective hole potential barrier heights formed by the electron block layer (EBL). (2) When the QW number is less than 9
the lower capacity of carrier confinement and lower radiative recombination rate in the active region reduce the performance of the device
though the turn-on voltage is lower. (3) When the QW number is more than 9
the structure shows higher peak internal quantum efficiency (IQE) and less serious efficiency droop compared with 9-QW structure. However
the smaller IQE and larger band bending effect make it worse for a high power structure.
量子阱数量数值模拟InGaN/AlGaN发光二极管大功率
number of quantum wellnumerical simulateInGaN/AlGaN LEDhigh power
Chen G C, Fan G H. Study on long-wavelength optical phonons in hexagonal InAlGaN crystals [J]. Chin. J. Lumin.(发光学报), 2012, 33(8):808-811 (in English).
He T, Chen Y, Li H, et al. Optimization of two-step AlN buffer of a-plane GaN films grown on r-plane sapphire by MOCVD [J]. Chin. J. Lumin.(发光学报), 2011, 32(4):363-367 (in English).
Kim M H, Schubert M F, Dai Q, et al. Origin of efficiency droop in GaN-based light-emitting diodes [J]. Appl. Phys. Lett., 2007, 91(18):183507-1-3.
Rozhansky I V, Zakheim D A. Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density [J]. Semiconductors, 2006, 40(7):839-845.
Kunzer M, Leancu C C, Maier M, et al. Well width dependent luminescence characteristics of UV-violet emitting GaInN QW LED structures [J]. Phys. Stat. Sol.(c), 2008, 5(6):2170-2172.
Reed M L, Readinger E D, Moe C G, et al. Benefits of negative polarization charge in n -InGaN on p -GaN single heterostructure light emitting diode with p -side down [J]. Phys. Stat. Sol.(c), 2009, 6(2):585-588.
Bulashevich K A, Karpov S Y. Is Auger recombination responsible for the efficiency rollover in Ⅲ-nitride light-emitting diodes? [J]. Phys. Stat. Sol.(c), 2008, 5(6):2066-2069.
Hader J, Moloney J V, Pasenow B, et al. On the importance of radiative and Auger losses in GaN-based quantum wells [J]. Appl. Phys. Lett., 2008, 92(26):261103-1-3.
Efremov A A, Bochkareva N I, Gorbunov R I, et al. Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs [J]. Semiconductors, 2006, 40(5):605-610.
Xing B, Cao W Y, Du W M. Temperature dependent PL of InGaN/ GaN multiple quantum wells with variable content of In [J]. Chin. J. Lumin.(发光学报), 2010, 31(6):864-869 (in Chinese).
Chang J Y, Tsai M C, Kuo Y K. Advantages of blue InGaN light-emitting diodes with AlGaN barriers [J]. Opt. Lett., 2010, 35(9):1368-1370.
Zhang Y Y, Yao G R. Performance enhancement of blue light-emitting diodes with AlGaN barriers and a special designed electron-blocking layer [J]. J. Appl. Phys., 2011, 110(9):093104-1-3.
David A, Grundmann M J, Kaeding J F, et al. Carrier distribution in (0001)InGaN/GaN multiple quantum well lightemitting diodes [J]. Appl. Phys. Lett., 2008, 92(5):053502-1-3.
Wang T, Nakagawa D, Wang J, et al. Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells [J]. Appl. Phys. Lett., 1998, 73(24):3571-3573.
Kim D J, Moon Y T, Song K M, et al. Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs [J]. Cryst. Growth, 2000, 221(4):368-372.
Liu J P, Ryou J H, Dupuis R D, et al. Barrier effect on hole transport and carrier distribution in InGaN/GaN multiple quantum well visible light-emitting diodes [J]. Appl. Phys. Lett., 2008, 93(2):021102-1-3.
Chang J Y, Kuo Y K, Tsai M C. Correlation of barrier material and quantum-well number for InGaN/(In)GaN blue light-emitting diodes [J]. Phys. Status Solidi A, 2011, 208(3):729-734.
Vurgaftman I, Meyer J R. Band parameters for nitrogen-containing semiconductors [J]. Appl. Phys., 2003, 94(6):3675-3679.
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