团聚效应对基于CdSe/ZnS量子点的电致发光二极管性能的影响

王立; 荣佳玲; 曹进; 朱文清; 张建华

doi:10.3788/fgxb20123312.1351

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团聚效应对基于CdSe/ZnS量子点的电致发光二极管性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 团聚效应对基于CdSe/ZnS量子点的电致发光二极管性能的影响
- Influence of Agglomeration in CdSe/ZnS Quantum Dot on The Performances of Light-emitting Diode
- 发光学报 2012年33卷第12期页码：1351-1356
- 作者机构：
  
  上海大学新型显示技术及应用集成教育部重点实验室上海,200072
- 作者简介：
- 基金信息：
  
  上海市科委项目(11100703200)();上海自然科学基金(09ZR1411900)资助项目()
- DOI：10.3788/fgxb20123312.1351
  中图分类号： TN383+.1
- 纸质出版日期：2012-12-10，
  
  收稿日期：2012-9-23，
  
  修回日期：2012-10-25，
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王立, 荣佳玲, 曹进, 朱文清, 张建华. 团聚效应对基于CdSe/ZnS量子点的电致发光二极管性能的影响[J]. 发光学报, 2012,33(12): 1351-1356

WANG Li, RONG Jia-ling, CAO Jin, ZHU Wen-qing, ZHANG Jian-hua. Influence of Agglomeration in CdSe/ZnS Quantum Dot on The Performances of Light-emitting Diode[J]. Chinese Journal of Luminescence, 2012,33(12): 1351-1356
王立, 荣佳玲, 曹进, 朱文清, 张建华. 团聚效应对基于CdSe/ZnS量子点的电致发光二极管性能的影响[J]. 发光学报, 2012,33(12): 1351-1356 DOI： 10.3788/fgxb20123312.1351.

WANG Li, RONG Jia-ling, CAO Jin, ZHU Wen-qing, ZHANG Jian-hua. Influence of Agglomeration in CdSe/ZnS Quantum Dot on The Performances of Light-emitting Diode[J]. Chinese Journal of Luminescence, 2012,33(12): 1351-1356 DOI： 10.3788/fgxb20123312.1351.

摘要

通过旋涂含有CdSe/ZnS量子点(Quantum dot

QD)的溶液为发光层薄膜

制备了叠层结构的电致发光二极管

利用原子力显微镜研究了QD发光亮度、薄膜形貌与其工艺条件、参数的关系。研究结果表明:随QD厚度的增加

QD纳米粒子薄膜由单层向多层薄膜形成

QD纳米颗粒发生团聚现象

并使器件亮度降低。此外

退火温度对QD薄膜形貌及其发光强度影响很大:当退火温度高于150 ℃时

产生的热量也会造成QD纳米粒子团聚

并导致QLED器件发光性能下降。

Abstract

Light-emitting diodes containing multilayer laminated structure are fabricated by spin-coating CdSe/ZnS quantum dots (QD) films as emitting layer. The dependences of process conditions and parameters on the electroluminescence and the QD film morphology are researched by using atomic force microscopy. The results show that with the increased thickness of QD

the multi-layer nano-particle films are formed

which leads to the QD nano-particles agglomerate and the brightness of device decrease. In addition

the annealing temperature of the QD layer has an important impact on the device brightness. When annealing temperature is low

the device shows poor performance due to the solvent volatized incompletely. When annealing temperature is above 150 ℃

the heat generated from annealing will cause the agglomeration of the QD nano-particles and then the performances of devices decline.

关键词

量子点发光二极管团聚

Keywords

quantum dotlight-emitting diodeagglomeration

references

Colvin V L, Schlamp M C, Alivisatos A P, et al. Light-emitting-diodes made from cadmium selenide nanocrystals and a semiconducting polymer [J]. Nature, 1994, 370(6488):354-357.

Coe S, Woo W K, Bawendi M, et al. Electroluminescence from single monolayers of nanocrystals in molecular organic devices [J]. Nature, 2002, 420(6917):800-803.

Sun Q J, Wang Y A, Li L S, et al. Bright, multicoloured light-emitting diodes based on quantum dots [J]. Nat. Photon., 2007, 1(12):717-722.

Kang B H, Seo J S, Jeong S, et al. Highly efficient hybrid light-emitting device using complex of CdSe/ZnS quantum dots embedded in co-polymer as an active layer [J]. Opt. Exp., 2010, 18(17):18303-18311.

Biswas S, Gosztola D J, Wiederrecht G P, et al. Annealing-induced morphological changes in nanocrystalline quantum dots and their impact on charge transport properties [J]. J. Electron. Mater., 2012, 41(3):524-529.

Qian L, Zheng Y, Xue J, et al. Stable and efficient quantum-dot light-emitting diodes based on solution-processed multilayer structures [J]. Nat. Photon., 2011, 5(9):543-548.

Liu A H, Yang L Y. Improved performance of organic light emitting diodes using combined hole-injecting layer [J]. Chin. J. Lumin.(发光学报), 2012, 33(4):422-427 (in Chinese).

Zhang Y L, Zeng Q H, Kong X G. The influence of bioconjugate process on the photoluminescence properties of water-soluble CdSe/ZnS core-shell quantum dots capped with polymer [J]. Chin. J. Lumin.(发光学报), 2010, 31(1):101-104 (in Chinese).

Cheng G, Mazzeo M, Rizzo A, et al. White light-emitting devices based on the combined emission from red CdSe/ZnS quantum dots, green phosphorescent, and blue fluorescent organic molecules [J]. Appl. Phys. Lett., 2009, 94(24):243506-1-3.

Pal B N, Ghosh Y, Brovelli S, et al. Giant' CdSe/CdS core/shell nanocrystal quantum dots as efficient electroluminescent materials: Strong influence of shell thickness on light-emitting diode performance [J]. Nano Lett., 2012, 12(1):331-336.

Anikeeva P O, Madigan C F, Halpert J E, et al. Electronic and excitonic processes in light-emitting devices based on organic materials and colloidal quantum dots [J]. Phys. Rev. B, 2008, 78(8):085434-1-8.

Likovich E M, Jaramillo R, Russell K J, et al. High-current-density monolayer CdSe/ZnS quantum dot light-emitting devices with oxide electrodes [J]. Adv. Mater., 2011, 23(39):4521-4525.

Anikeeva P O, Halpert J E, Bawendi M G, et al. Quantum dot light-emitting devices with electroluminescence tunable over the entire visible spectrum [J]. Nano Lett., 2009, 9(7):2532-2536.

Jing P T, Yuan X, Ji W Y, et al. Efficient energy transfer from hole transporting materials to CdSe-core CdS/ZnCdS/ZnS-multishell quantum dots in type Ⅱ aligned blend films [J]. Appl. Phys. Lett., 2011, 99(9):093106-1-3.

Wang Y C, Wang M, Su X Y, et al. First principles on the electron structure and optical properties of the Mg-doped CdSe system [J]. Chin. J. Lumin.(发光学报), 2010, 31(6):842-847 (in Chinese).

Anikeeva P O, Halpert J E, Bawendi M G, et al. Electroluminescence from a mixed red-green-blue colloidal quantum dot monolayer [J]. Nano Lett., 2007, 7(8):2196-2200.

Cho K S, Lee E K, Joo W J, et al. High-performance crosslinked colloidal quantum-dot lightemitting diodes [J]. Nat. Photon., 2009, 3(6):341-345.

Zhao Y B, Su Z S, Jin F M, et al. High efficiency phosphorescent organic light-emitting devices based on multiple quantum well structure [J]. Chin. J. Lumin.(发光学报), 2012, 33(8):803-807 (in Chinese).

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