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1. 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所,吉林 长春,130033
2. 东北大学 理学院,辽宁 沈阳,110819
纸质出版日期:2012-12-10,
收稿日期:2012-8-19,
修回日期:2012-9-26,
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陈肖慧, 赵家龙. 倒置器件结构及局域等离子体效应对CdSe量子点LED发光性能的改进[J]. 发光学报, 2012,33(12): 1324-1328
CHEN Xiao-hui, ZHAO Jia-long. Improvement of Performance for CdSe Quantum Dot LEDs by Using An Inverted Device Structure and Localized Surface Plasmon Resonance[J]. Chinese Journal of Luminescence, 2012,33(12): 1324-1328
陈肖慧, 赵家龙. 倒置器件结构及局域等离子体效应对CdSe量子点LED发光性能的改进[J]. 发光学报, 2012,33(12): 1324-1328 DOI: 10.3788/fgxb20123312.1324.
CHEN Xiao-hui, ZHAO Jia-long. Improvement of Performance for CdSe Quantum Dot LEDs by Using An Inverted Device Structure and Localized Surface Plasmon Resonance[J]. Chinese Journal of Luminescence, 2012,33(12): 1324-1328 DOI: 10.3788/fgxb20123312.1324.
研究了倒置器件结构以及CdSe量子点发光材料与金属纳米粒子之间的相互作用对量子点的电致发光性能的影响。利用TiO
2
作为电子传输/注入层
成功地制备了倒置结构的量子点电致发光器件。通过对单载流子器件电压-电流特性的分析
证明了ITO作为阴极到TiO
2
的电子注入特性与Al作为阴极时的效果几乎相同。观察到金属纳米粒子产生的局域等离子体效应提高了器件的效率
使得效率随电流增大而降低的速度明显减小。在电流密度为200 mA/cm
2
时
电致发光器件的效率大约提高了42%。
The improvement of the performance for CdSe quantum dot light emitting diodes (QD-LEDs) was studied by using the inverted device structure and localized surface plasmon resonant (LSPR) coupling of Au nanoparticles with the QDs. We fabricated inverted QD-LEDs with TiO
2
as the electron injection/transport layer. The current density-voltage characteristics of electron-only device were studied. The electron-injection current from the top Al electrode with the forward-bias voltage (Al was used as the cathode) was symmetrical with that of the bottom ITO electrode with reverse-bias voltage (ITO was used as the cathode)
indicating the electron injection from ITO to TiO
2
is facilitated like the case from Al cathode. It was noticed that the efficiency of QD-LEDs with Au nanoparticles was enhanced while the drop rate of the efficiency was clearly reduced with increasing the current density. A significant enhancement of 42% for current efficiency of the LEDs was achieved under high current density of 200 mA/cm
2
.
量子点电致发光倒置量子点LED金属纳米粒子
quantum dotelectroluminescenceinverted quantum dot LEDmetal nanoparticle
Li J J, Wang Y A, Guo W Z, et al. Large-scale synthesis of nearly monodisperse CdSe/CdS core/shell nanocrystals using air-stable reagents via successive ion layer adsorption and reaction [J]. J. Am. Chem. Soc., 2003, 125(41):12567-12575.
Zhang Y L, Zeng Q H, Kong X G. The influence of bioconjugate process on the photoluminescence properties of water-soluble CdSe/ZnS core-shell quantum dots capped with polymer [J]. Chin. J. Lumin.(发光学报), 2010, 31(1):101-104 (in Chinese).
Jang E, Jun S, Jang H, et al. White-light-emitting diodes with quantum dot color converters for display backlights [J]. Adv. Mater., 2010, 22(28):3076-3080.
Colvin V L, Schlamp M C, Alivisatos A P. Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer [J]. Nature, 1994, 370(6488):354-357.
Coe S, Steckel J S, Woo W K, et al. Large-area ordered quantum-dot monolayers via phase separation during spin-casting [J]. Adv. Funct. Mater., 2005, 15(7):1117-1124.
Niu Y H, Munro A M, Cheng Y J, et al. Improved performance from multilayer quantum dot light-emitting diodes via thermal annealing of the quantum dot layer [J]. Adv. Mater., 2007, 19(20):3371-3376.
Sun Q J, Wang Y A, Li S L, et al. Bright, multicoloured light-emitting diodes based on quantum dots [J]. Nat. Photon., 2007, 1(12):717-722.
Coe S, Woo W K, Bawendi M, et al. Electroluminescence from single monolayers of nanocrystals in molecular organic devices [J]. Nature, 2002, 420(6917):800-803.
Zhao J L, BardeckeR J A, Munro A M, et al. Efficient CdSe/CdS quantum dot light-emitting diodes using a thermally polymerized hole transport layer [J]. Nano Lett., 2006, 6(3):463-467.
Caruge J M, Halpert J E, Wood V, et al. Colloidal quantum-dot light-emitting diodes with metal-oxide charge transport layers [J]. Nat. Photon., 2008, 2(4):247-250.
Mashford B S, Nguyen T L, Wilson G J, et al. All-inorganic quantum-dot light-emitting devices formed via low-cost, wet-chemical processing [J]. J. Mater. Chem., 2010, 20(1):167-172.
Wang X Y, Liu X Y, Zhao J L. Synthesis and luminescence properties of CuInS2 nanocrystals [J]. Chin. J. Lumin.(发光学报), 2012, 33(1):7-11 (in Chinese).
Kwak J, Bar W K, Lee D, et al. Bright and efficient full-color colloidal quantum dot light-emitting diodes using an inverted device structure [J]. Nano. Lett., 2012, 12(6):2362-2366.
Brust M, Walker M, Bethell D, et al. Synthesis of thiol-derivatised gold nanoparticles in a two-phase liquid-liquid system [J]. J. Chem. Soc. Chem. Commun., 1994(7):801-802.
Zhao J L, Zhang J Y, Jiang C Y, et al. Electroluminescence from isolated CdSe/ZnS quantum dots in multilayered light-emitting diodes [J]. J. Appl. Phys., 2004, 96(6):3206-3210.
Kulakovich O, Strekal N, Yaroroshevich A, et al. Enhanced luminescence of CdSe quantum dots on gold colloids [J]. Nano Lett., 2002, 2(12):1449-1452.
Guo L, Zhao D X, Zhang Z Z, et al. Photoluminescence and photoresponse property of Ag modified ZnO nanowire [J]. Chin. J. Lumin.(发光学报), 2011, 32(3):216-219 (in English).
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