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1. 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所,吉林 长春,130033
2. 中国科学院大学 北京,100049
纸质出版日期:2012-12-10,
收稿日期:2012-5-18,
修回日期:2012-8-3,
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张金胜, 张金龙, 宁永强. 离子辅助沉积法制备SiO<sub>2</sub>介质薄膜的应力研究[J]. 发光学报, 2012,33(12): 1304-1308
ZHANG Jin-sheng, ZHANG Jin-long, NING Yong-qiang. Study of SiO<sub>2</sub> Dielectric Film Stress Grown by The Method of Ion Assisted Deposition[J]. Chinese Journal of Luminescence, 2012,33(12): 1304-1308
张金胜, 张金龙, 宁永强. 离子辅助沉积法制备SiO<sub>2</sub>介质薄膜的应力研究[J]. 发光学报, 2012,33(12): 1304-1308 DOI: 10.3788/fgxb20123312.1304.
ZHANG Jin-sheng, ZHANG Jin-long, NING Yong-qiang. Study of SiO<sub>2</sub> Dielectric Film Stress Grown by The Method of Ion Assisted Deposition[J]. Chinese Journal of Luminescence, 2012,33(12): 1304-1308 DOI: 10.3788/fgxb20123312.1304.
在高功率垂直腔面发射激光器制作工艺中
生长出低应力、高质量、高稳定性的SiO
2
介质层非常关键。我们使用高效率LaB
6
离子源辅助
在低放电电流条件下
在GaAs衬底上沉积了SiO
2
并对退火的应力影响进行了测试。在有离子辅助沉积时
对不同生长速率、不同厚度的应力影响进行了研究
对沉积过程进行了分析。结果表明:离子辅助沉积的SiO
2
薄膜的应力远小于常规工艺条件下沉积的薄膜的应力
且退火后应力变化小。
It is critical to achieve high quality and stability SiO
2
barrier in making high-power semiconductor lasers
SiO
2
barrier layer was grown on GaAs substrates using high efficiency LaB
6
ion assisted in low current. The stress effects were tested and analyzed after annealing. The stress conditions of different thickness and different growth rates were experimentally investigated and the deposition process was analyzed. The results show that the stress of SiO
2
film under the conditions of ion-assisted deposition is far less than the conventional deposition conditions. The stress of SiO
2
film under the conditions of ion-assisted deposition changes smaller after annealing.
离子辅助沉积SiO2薄膜应力退火
ion-assisted depositionSiO2 filmstressannealing
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Zhang T M, Miao G Q, Fu J, et al. Preparation of buffer by the stress between In0.82Ga0.18As layer and InP substrate [J]. Chin. J. Lumin.(发光学报), 2011, 32(6):612-616 (in Chinese).
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