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长春理工大学 理学院,吉林 长春,130022
纸质出版日期:2012-11-10,
收稿日期:2012-6-8,
修回日期:2012-9-6,
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李晓妮, 方芳, 方铉, 陈新颖, 魏志鹏, 李金华, 楚学影, 王晓华. 柔性衬底上ALD法低温制备的ZnO薄膜的光学和电学特性[J]. 发光学报, 2012,(11): 1232-1235
LI Xiao-ni, FANG Fang, FANG Xuan, CHEN Xin-ying, WEI Zhi-peng, LI Jin-hua, CHU Xue-ying, WANG Xiao-hua. The Optical and Electrical Properties of ZnO Films Grown on Flexible Substrate at Low Temperature by ALD[J]. Chinese Journal of Luminescence, 2012,(11): 1232-1235
李晓妮, 方芳, 方铉, 陈新颖, 魏志鹏, 李金华, 楚学影, 王晓华. 柔性衬底上ALD法低温制备的ZnO薄膜的光学和电学特性[J]. 发光学报, 2012,(11): 1232-1235 DOI: 10.3788/fgxb20123311.1232.
LI Xiao-ni, FANG Fang, FANG Xuan, CHEN Xin-ying, WEI Zhi-peng, LI Jin-hua, CHU Xue-ying, WANG Xiao-hua. The Optical and Electrical Properties of ZnO Films Grown on Flexible Substrate at Low Temperature by ALD[J]. Chinese Journal of Luminescence, 2012,(11): 1232-1235 DOI: 10.3788/fgxb20123311.1232.
以二乙基锌和水分别作为金属前驱体和反应物
利用原子层沉积方法(ALD)在柔性衬底上生长ZnO薄膜
讨论了生长温度对薄膜特性的影响。用AFM、XRD和HALL等对薄膜的表面形貌、晶体结构和电学性质进行表征
并且用PL光谱表征了其光学特性。实验结果表明
随着生长温度(低温下)的升高
薄膜的晶体质量和光学特性得到改善。当生长温度为170 ℃时
薄膜呈现良好的
c
轴择优取向
且具有较高的电子浓度(5.62×10
19
cm
-3
)和电子迁移率(28.2 cm
2
·V
-1
·s
-1
)。
ZnO films were grown on flexible substrate by the atomic layer deposition (ALD) using diethyl zinc (DEZn) as a metal precursor and water as a reactant. AFM
XRD and HALL effect were used to investigate the morphology
structural and electrical properties of the films. PL spectrum was measured for optical property. With the increasing temperature
the crystal quality and optical property of the films were improved. When grown at 170℃
the films exhibited
c
-axis orientation
the electron concentration was 5.62×10
19
and the electron mobility was 28.2 cm
2
·V
-1
·s
-1
.
ZnOALD生长温度柔性衬底
ZnOALDgrowth temperatureflexible substrate
Look D C, Reynolds D C, Sizelove J R, et al. Electrical properties of bulk ZnO [J]. Solid State Commun., 1998,105(6):399-401.
Look D C, Reynolds D C, Litton C W, et al. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy [J]. Appl. Phys. Lett., 2002, 81(10):1830-1832.
Jiao S J, Zhang Z Z, Lu Y M, et al. ZnO p-n junction light-emitting diodes fabricated on sapphire substrates [J]. Appl. Phys. Lett., 2006, 88(3):031911-1-3.
Gao X Q, Guo Z Y, Zhang Y F, et al. The electronic structure and optical properties of Al-N codoped ZnO [J]. Chin. J. Lumin. (发光学报), 2010, 31(4):509-514 (in Chinese).
Sahu D R, Huang J L. High quality transparent conductive ZnO/Ag/ZnO multilayer films deposited at room temperature [J]. Thin Solid Films, 2006, 515(3):876-879.
Sahu D R, Lin S Y, Huang J L. ZnO/Ag/ZnO multilayer films for the application of a very low resistance transparent electrode [J]. Appl. Surf. Sci., 2006, 252(20):7509-7514.
Wang X, Gareg W P, Yee S. Monolithic thin-film metal-oxide gas-sensor arrays with application to monitoring of organic vapors [J]. Sensor Actuate B, 1995, 28(1):63-70.
Zdziecka E P, Wachnicki Ł, Paszkowicz W, et al. Photoluminescence, electrical and structural properties of ZnO films, grown by ALD at low temperature [J]. Semicond. Sci. Technol., 2009, 24(1):1-9.
Xu L, Liang H W, Liu Y D, et al. Cu-doped ZnO thin films prepared by metallorganic chemical vapor deposition [J]. Chin. J. Lumin.(发光学报), 2011, 32(9):956-961 (in Chinese).
Dong B Z, Fang G J, Wang J F, et al. Effect of thickness on structural, electrical, and optical properties of ZnO∶Al films deposited by pusled laser deposition [J]. J. Appl. Phys., 2007, 101(3):033713-1-7.
Liu F J, Hu Z F, Li Z J, et al. Surface acoustic wave based on ZnO thin films grown by RF-MBE [J]. Chin. J. Lumin.(发光学报), 2012, 33(3):328-333 (in Chinese).
Song H D, Kim Y J. Characterization of luminescent properties of ZnO∶Er thin films prepared by RF magnetron sputtering [J]. J.Eur. Ceram. Soc., 2007, 27(13-15):3745-3748.
Dong B Z, Fang G J, Wang J F, et al. Effect of thickness on structural, electrical, and optical properties of ZnO∶Al films deposited by pusled laser deposition [J]. J. Appl. Phys., 2007, 101(3):033713-1-7.
Wang L D, Li Y, Chang C, et al. The adhesion strength study of ITO electric electrode improved by PI buffer layer on the flexible PET [J]. Chinese Sci. Bulletin, 2004, 49(24):2356-2539.
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