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昆明物理研究所,云南 昆明,650223
纸质出版日期:2012-11-10,
收稿日期:2012-7-23,
修回日期:2012-9-14,
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王光华, 孔金丞, 李雄军, 杨丽丽, 赵惠琼, 姬荣斌. 溅射气压对非晶Hg<sub>1-<em>x</em></sub>Cd<sub><em>x</em></sub>Te薄膜微观结构和化学组分的影响[J]. 发光学报, 2012,(11): 1224-1231
WANG Guang-hua, KONG Jin-chen, LI Xiong-jun, YANG Li-li, ZHAO Hui-qiong, JI Rong-bin. Effects of Sputtering Pressure on Microstructure and Chemical Composition of Amorphous Hg<sub>1-<em>x</em></sub>Cd<sub><em>x</em></sub>Te Films[J]. Chinese Journal of Luminescence, 2012,(11): 1224-1231
王光华, 孔金丞, 李雄军, 杨丽丽, 赵惠琼, 姬荣斌. 溅射气压对非晶Hg<sub>1-<em>x</em></sub>Cd<sub><em>x</em></sub>Te薄膜微观结构和化学组分的影响[J]. 发光学报, 2012,(11): 1224-1231 DOI: 10.3788/fgxb20123311.1224.
WANG Guang-hua, KONG Jin-chen, LI Xiong-jun, YANG Li-li, ZHAO Hui-qiong, JI Rong-bin. Effects of Sputtering Pressure on Microstructure and Chemical Composition of Amorphous Hg<sub>1-<em>x</em></sub>Cd<sub><em>x</em></sub>Te Films[J]. Chinese Journal of Luminescence, 2012,(11): 1224-1231 DOI: 10.3788/fgxb20123311.1224.
采用射频磁控溅射制备了非晶态结构的Hg
1-
x
Cd
x
Te薄膜
并利用台阶仪、XRD、原子力显微镜、EDS等分析手段对薄膜生长速率、物相、表面形貌、组分比例进行了研究。实验结果表明
溅射气压对薄膜生长速率、微观结构、表面形貌和化学组分有直接影响。随着溅射气压增大
其生长速率逐渐降低。当溅射气压高于1.1 Pa时
薄膜XRD图谱上没有出现任何特征衍射峰
只是在2
θ
=23°附近出现衍射波包
具有明显的非晶态特征;当溅射气压小于1.1 Pa时
XRD谱表现为多晶结构。另外
随着溅射气压的增加
薄膜表面粗糙度逐渐减小
而且溅射气压对薄膜组成的化学计量比有明显影响
当溅射气压为1.1 Pa时
薄膜中Hg的组分比最低
而Cd组分比最高。
Mercury cadmium telluride films were prepared by RF magnetron sputtering technique at different sputtering pressure on glass substrate. In experiment
X-ray diffraction (XRD)
atomic force microscopy (AFM) and energy dispersive spectroscopy (EDS) have been used to characterize the microstructure
surface morphology and chemical composition of Hg
1-
x
Cd
x
Te films. Experimental results show that the growth rate
crystal structure
chemical composition content and surface morphology of the Hg
1-
x
Cd
x
Te films have a strong relation to the sputtering pressure. When increased the sputtering pressure
the growth rate of films decreased. When the sputtering pressure was more than 1.1 Pa
the prepared Hg
1-
x
Cd
x
Te film was amorphous
and when the sputtering pressure was controlled at 0.9 Pa
the films exhibited polycrystalline structure. In addition
the surface roughness (RMS and Ra) of Hg
1-
x
Cd
x
Te films gradually decreased with the increasing of sputtering pressure. The chemical composition of films also varing with different sputtering pressure
the Hg and Hg+Cd content in films reache the lowest
but the Cd content gets to the top at 1.1 Pa.
碲镉汞薄膜非晶半导体微观结构表面形貌磁控溅射
Hg1-xCdxTe filmsamorphous semiconductorsmicrostructuresurface morphologymagnetron sputtering
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