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内蒙古工业大学 理学院物理系,内蒙古 呼和浩特,010051
纸质出版日期:2012-11-10,
收稿日期:2012-6-29,
修回日期:2012-9-24,
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刘贺, 温淑敏, 赵春旺, 哈斯花. 外场下压力及屏蔽对无限深量子阱中施主结合能的影响[J]. 发光学报, 2012,(11): 1198-1203
LIU He, WEN Shu-min, ZHAO Chun-wang, HA Si-hua. Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers Under An External Magnetic Field[J]. Chinese Journal of Luminescence, 2012,(11): 1198-1203
刘贺, 温淑敏, 赵春旺, 哈斯花. 外场下压力及屏蔽对无限深量子阱中施主结合能的影响[J]. 发光学报, 2012,(11): 1198-1203 DOI: 10.3788/fgxb20123311.1198.
LIU He, WEN Shu-min, ZHAO Chun-wang, HA Si-hua. Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers Under An External Magnetic Field[J]. Chinese Journal of Luminescence, 2012,(11): 1198-1203 DOI: 10.3788/fgxb20123311.1198.
考虑外加磁场、压力及屏蔽效应
利用变分方法数值计算GaN/Al
x
Ga
1-
x
N无限深量子阱系统中的杂质态结合能。给出结合能随磁场和阱宽的变化关系
同时讨论了有无屏蔽时的区别。结果表明:在磁场和压力作用下
结合能随阱宽的增大而减小;阱宽和压力一定时
结合能随磁场的增大而增大。屏蔽效应使得有效库仑吸引作用减弱而导致杂质态结合能显著下降。屏蔽效应对结合能的影响随压力增大而增强
随磁场强度增大而减弱。
Considering the hydrostatic pressure and screening effect on the GaN/Al
x
Ga
1-
x
N quantum well with infinite barriers under an external magnetic field. The variational methods are used to numerical calculation the binding energies of the impurity in the system. The relations between the binding energies of donors with magnetic field strength and well width is given. We also discussed the difference between the cases with and without screening. The resultds indicate that the binding energy increases with the well width under a fixed magnetic field strength and pressure. The results also show that the binding energy increases with the magnetic field strength for a given well width and pressure. Because of the screening reduce coulomb interaction effectively
the binding energy of impurity states decreases significantly. Screening effect increases with the pressure and decreases with the magnetic field strength.
量子阱压力外磁场屏蔽结合能
quantum wellpressureexternal magnetic fieldscreeningbinding energy
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