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1. 上海理工大学 光电信息与计算机工程学院 上海,200093
2. Department of Engineering Science and Mechanics, Penn State University,Pennsylvania,USA,16802
纸质出版日期:2012-11-10,
收稿日期:2012-6-5,
修回日期:2012-9-4,
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张文君, 翟保才, 许键. ZnO作为电子传输层的绿光胶体CdSe量子点LED(QD-LED)的制备与表征[J]. 发光学报, 2012,(11): 1171-1176
ZHANG Wen-jun, ZHAI Bao-cai, XU Jian. Fabrication and Characterization of Green CdSe Quantumn Dot Light Emitting Diodes with ZnO Electron-transport Layer[J]. Chinese Journal of Luminescence, 2012,(11): 1171-1176
张文君, 翟保才, 许键. ZnO作为电子传输层的绿光胶体CdSe量子点LED(QD-LED)的制备与表征[J]. 发光学报, 2012,(11): 1171-1176 DOI: 10.3788/fgxb20123311.1171.
ZHANG Wen-jun, ZHAI Bao-cai, XU Jian. Fabrication and Characterization of Green CdSe Quantumn Dot Light Emitting Diodes with ZnO Electron-transport Layer[J]. Chinese Journal of Luminescence, 2012,(11): 1171-1176 DOI: 10.3788/fgxb20123311.1171.
通过调节作为发光层的量子点的尺寸
可以制作出覆盖可见光(380~780 nm)以及近红外光谱的量子点LED(QD-LED)
其光谱范围很窄且半高宽可达30 nm。然而量子点LED的寿命、亮度以及效率需要进一步提高才能满足商业化的需求。为了研究QD-LED器件的特性
本文采用523 nm波长的CdSe/ZnS核壳型量子点为发光层、poly-TPD为空穴传输层、ZnO为电子传输层
制备了绿光量子点LED
并表征了器件的特性。
CdSe/ZnS core-shell QDs (523 nm) were used as emissive layers
poly-TPD as hole-transport layer (HTL) and ZnO as electron-transport layer(ETL). Green-emitting devices based on CdSe QDs were fabricated and characterized. Luminescence of semiconductor nanocrystal quantum dots (QDs) were used as luminescent centers in organic light emitting devices (OLEDs). By changing the size of QD
this OLED can emit visible to near-infrared spectrum with a narrow full-width at half-maximum (FWHM) of ~30 nm. However
the brightness
efficiency
and lifetime of LEDs need to be improved to meet the requirements of commercialization in the near future.
LED量子点LED结构制备表征
light emitting diodeQD-LEDarchitecturefabricationcharacterization
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