浏览全部资源
扫码关注微信
1. 华为技术有限公司,广东 深圳,518000
2. 香港理工大学 应用物理系, 香港 999077
3. 大连民族学院 机电信息工程学院, 辽宁 大连 116600
4. 大连民族学院 物理与材料工程学院,辽宁 大连,116600
纸质出版日期:2012-10-10,
收稿日期:2012-7-15,
修回日期:2012-8-13,
扫 描 看 全 文
冯志庆, 白兰, 王宁, 高磊, 陈波, 张需明. 基于双透镜外腔结构的窄线宽可调谐半导体激光器[J]. 发光学报, 2012,(10): 1138-1142
FENG Zhi-qing, BAI Lan, WANG Ning, GAO Lei, CHEN Bo, ZHANG Xu-ming. Narrow-linewidth Tunable Semiconductor Lasers Based on Dual-lens External-cavity Structure[J]. Chinese Journal of Luminescence, 2012,(10): 1138-1142
冯志庆, 白兰, 王宁, 高磊, 陈波, 张需明. 基于双透镜外腔结构的窄线宽可调谐半导体激光器[J]. 发光学报, 2012,(10): 1138-1142 DOI: 10.3788/fgxb20123310.1138.
FENG Zhi-qing, BAI Lan, WANG Ning, GAO Lei, CHEN Bo, ZHANG Xu-ming. Narrow-linewidth Tunable Semiconductor Lasers Based on Dual-lens External-cavity Structure[J]. Chinese Journal of Luminescence, 2012,(10): 1138-1142 DOI: 10.3788/fgxb20123310.1138.
设计了一种具有独特双透镜外腔结构的可调谐窄线宽激光器
利用一个温控50GHz的标准具提供ITU标准波长序列
通过一个压电陶瓷驱动的Fabry-Pérot可调谐滤波器选择一个标准波长实现单波长输出。实验结果表明:该激光器的调谐范围达到了1525~1580nm
覆盖整个C波段
线宽为37.5kHz
400mA电流条件下的输出功率超过50mW
边模抑制比超过50dB
达到或超过相干通讯应用的要求和其他单片集成类器件的指标。另外
本结构具有位置容差大、调谐速度快(<3ms)、易于实现超窄线宽以及波长微调等优点
待实现小型化和标准封装
其大规模应用将成为可能。
A narrow-linewidth tunable laser based on a unique dual-lens external-cavity structure was reported
in which a thermally-tuned 50 GHz etalon was utilized to provide standard ITU-grid wavelengths and a PZT-actuated tunable Fabry-Pérot filter to select wavelength.In experiment
the laser wavelength could be tuned from 1 525 to 1 580 nm
covering the whole C band.And it measured a linewidth of 37.5 kHz
an output power >50 mW at the 400 mA pump current
a SMSR > 50 dB and a tuning speed <3 ms.The performance is superior to the requirements of coherent communication applications and the reported planar waveguide-based counterparts.Moreover
the dual-lens structure bears other merits such as high positioning tolerance and potential for ultra-narrow linewidth.It may have a wide application after miniaturization and standard packaging.
外腔激光器F-P滤波器窄线宽相干光通讯
Ishii H,Kasaya K,Oohashi H.Wavelength-tunable lasers for next-generation optical networks [J]. NTT Techn.Rev., 2011,9(3):1-6.
Buus J,Murphy E J.Tunable lasers in optical networks [J]. IEEE J.Lightwave Technol.,2006,24(1):5-11.
Horikawa K,Yamamoto A,Osada T,et al. Development of ITLA using a full-band tunable laser [J]. Furukawa Rev.,2009,35:1-5.
Doerr C R,Joyner C H,Stulz L W.40-wavelength rapidly digitally tunable laser [J]. IEEE Photonics Technol.Lett.,1999,11(11):1348-1350.
Lei Z H.Latest development trend of optical communications [J]. World Telecommunication (世界电信),2000(12):6-10 (in Chinese).
Wang S J,Liu J H,Li S C.Research development of tunable lasers for communication systems [J]. Optical Communication Technology (光通信技术),2003(4):38-43 (in Chinese).
Dai Z Y,Zhang X X,Peng Z S,et al. High-power single-frequency narrow linewidth fiber laser with nonlinear two-wave mixing [J]. Chin.J.Lumin.(发光学报),2011,32(2):159-163 (in Chinese).
Qu R H,Cai H W.Narrow linewidth lasers with high stability [J]. Infrared and Laser Engineering (红外与激光工程),2009,38(6):1033-1038 (in Chinese).
Liang X M,Lu J K,Cheng L W,et al. Structural design of vertical-external-cavity surface-emitting semiconductor laser with 920 nm [J]. Chin.J.Lumin.(发光学报),2010,31(1):79-85 (in English).
Yang Y,Liu Y,Qin L,et al. Electro-optic properties of 850 nm high-brightness tapered lasers [J]. Chin.J.Lumin.(发光学报),2011,32(6):593-597 (in Chinese).
Henry C H.Theory of linewidth of semiconductor lasers [J]. IEEE J.Quantum Electron., 1982,18(2):259-264.
Liu A Q,Zhang X M.Review of MEMS external cavity tunable lasers [J]. J.Micromechan.Microengin.,2007,17(1):R1-R13.
Zorabedian P.Tunable Lasers Handbook [M].New York:Academic Press,1995:373.
McDonald M E,Wang W.Thermo-optic tunable laser apparatus:US,7295582.2007-11-13.
Derickson D.Fiber Optic Test and Measurement [M].New Jersey:Prentice Hall,1998.
0
浏览量
41
下载量
1
CSCD
关联资源
相关文章
相关作者
相关机构