人体模式静电对GaN基蓝光LED载流子运动及其可靠性的影响

吴国庆; 郭伟玲; 朱彦旭; 刘建朋

doi:10.3788/fgxb20123310.1132

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人体模式静电对GaN基蓝光LED载流子运动及其可靠性的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 人体模式静电对GaN基蓝光LED载流子运动及其可靠性的影响
- Effects of Human Body Mode Electrostatic on Carrier Movement and The Reliability of GaN-based Blue Light-emitting Diode
- 发光学报 2012年33卷第10期页码：1132-1137
- 作者机构：
  
  北京工业大学北京光电子技术省部共建教育部重点实验室北京,100124
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123310.1132
  中图分类号： TN383
- 纸质出版日期：2012-10-10，
  
  收稿日期：2012-6-9，
  
  修回日期：2012-7-30，
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吴国庆, 郭伟玲, 朱彦旭, 刘建朋. 人体模式静电对GaN基蓝光LED载流子运动及其可靠性的影响[J]. 发光学报, 2012,(10): 1132-1137

WU Guo-qing, GUO Wei-ling, ZHU Yan-xu, LIU Jian-peng. Effects of Human Body Mode Electrostatic on Carrier Movement and The Reliability of GaN-based Blue Light-emitting Diode[J]. Chinese Journal of Luminescence, 2012,(10): 1132-1137
吴国庆, 郭伟玲, 朱彦旭, 刘建朋. 人体模式静电对GaN基蓝光LED载流子运动及其可靠性的影响[J]. 发光学报, 2012,(10): 1132-1137 DOI： 10.3788/fgxb20123310.1132.

WU Guo-qing, GUO Wei-ling, ZHU Yan-xu, LIU Jian-peng. Effects of Human Body Mode Electrostatic on Carrier Movement and The Reliability of GaN-based Blue Light-emitting Diode[J]. Chinese Journal of Luminescence, 2012,(10): 1132-1137 DOI： 10.3788/fgxb20123310.1132.

摘要

对GaN基蓝光发光二极管(LED)分别施加-400

-800

-1200

-1500V的反向人体模式静电打击

每次静电打击后

测量LED样品电学参数和光学参数的变化

从理论上分析了静电对LED可靠性的影响。实验发现:对GaN基蓝光LED进行人体模式下的静电打击后

其

I-V

特性曲线发生变形

光通量减小

老化时性能衰减的速率加快

这是由于受静电打击后在LED芯片内部产生了二次缺陷和熔融通道。对LED在不同温度下进行了

I-V

特性曲线的测量。实验结论认为未受静电打击的LED中浅能级离化占主导地位

受静电打击的LED中深能级离化占主导地位。静电引起的失效机理可以概述为二次缺陷和熔融通道的产生、深浅能级载流子的运动和辐射复合、非辐射复合之间的转变等因素引起的LED性能退化。

Abstract

GaN-based blue light-emitting diodes were applied bias of-400

-800

-1 200 and-1 500 V electrostatic discharge in human body mode.The electrical and optical parameters of LED were characterized before and after electrostatic discharge stressing with the theoretical analysis of the influence of electrostatic on LED reliability.After human body mode static crack down on the GaN-based blue LED

the

I-V

characteristic curve changed

the luminous flux reduced

LED's degradation rate was also accelerated.It is deduced that the LED was hit by electrostatic generates secondary defects and melting channel inside the chip.Based on the result of

I-V

characteristic curve at different temperature

we assumed that the shallow level ionization is dominated in LED

while after static crack down

the deep level ionization is dominant.Therefore

a failure mechanism caused by electrostatic can be deduced as follow.The generation of secondary defects and melting channel

the shallow level/deep level carrier movement and the change of radiative/non-radiative recombination

cause the degradation of LED performance.These find make great efforts to understand the failure mechanism caused by the electrostatic discharge and anti-static design.

关键词

LED静电可靠性

Keywords

LEDelectrostaticreliability

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