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北京工业大学 北京光电子技术省部共建教育部重点实验室 北京,100124
纸质出版日期:2012-10-10,
收稿日期:2012-6-9,
修回日期:2012-7-30,
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吴国庆, 郭伟玲, 朱彦旭, 刘建朋. 人体模式静电对GaN基蓝光LED载流子运动及其可靠性的影响[J]. 发光学报, 2012,(10): 1132-1137
WU Guo-qing, GUO Wei-ling, ZHU Yan-xu, LIU Jian-peng. Effects of Human Body Mode Electrostatic on Carrier Movement and The Reliability of GaN-based Blue Light-emitting Diode[J]. Chinese Journal of Luminescence, 2012,(10): 1132-1137
吴国庆, 郭伟玲, 朱彦旭, 刘建朋. 人体模式静电对GaN基蓝光LED载流子运动及其可靠性的影响[J]. 发光学报, 2012,(10): 1132-1137 DOI: 10.3788/fgxb20123310.1132.
WU Guo-qing, GUO Wei-ling, ZHU Yan-xu, LIU Jian-peng. Effects of Human Body Mode Electrostatic on Carrier Movement and The Reliability of GaN-based Blue Light-emitting Diode[J]. Chinese Journal of Luminescence, 2012,(10): 1132-1137 DOI: 10.3788/fgxb20123310.1132.
对GaN基蓝光发光二极管(LED)分别施加-400
-800
-1200
-1500V的反向人体模式静电打击
每次静电打击后
测量LED样品电学参数和光学参数的变化
从理论上分析了静电对LED可靠性的影响。实验发现:对GaN基蓝光LED进行人体模式下的静电打击后
其
I-V
特性曲线发生变形
光通量减小
老化时性能衰减的速率加快
这是由于受静电打击后在LED芯片内部产生了二次缺陷和熔融通道。对LED在不同温度下进行了
I-V
特性曲线的测量。实验结论认为未受静电打击的LED中浅能级离化占主导地位
受静电打击的LED中深能级离化占主导地位。静电引起的失效机理可以概述为二次缺陷和熔融通道的产生、深浅能级载流子的运动和辐射复合、非辐射复合之间的转变等因素引起的LED性能退化。
GaN-based blue light-emitting diodes were applied bias of-400
-800
-1 200 and-1 500 V electrostatic discharge in human body mode.The electrical and optical parameters of LED were characterized before and after electrostatic discharge stressing with the theoretical analysis of the influence of electrostatic on LED reliability.After human body mode static crack down on the GaN-based blue LED
the
I-V
characteristic curve changed
the luminous flux reduced
LED's degradation rate was also accelerated.It is deduced that the LED was hit by electrostatic generates secondary defects and melting channel inside the chip.Based on the result of
I-V
characteristic curve at different temperature
we assumed that the shallow level ionization is dominated in LED
while after static crack down
the deep level ionization is dominant.Therefore
a failure mechanism caused by electrostatic can be deduced as follow.The generation of secondary defects and melting channel
the shallow level/deep level carrier movement and the change of radiative/non-radiative recombination
cause the degradation of LED performance.These find make great efforts to understand the failure mechanism caused by the electrostatic discharge and anti-static design.
LED静电可靠性
LEDelectrostaticreliability
Tan C M,Chen B K,Li X,et al. Rapid light output degradation of GaN-based packaged LED in the early stage of humidity test [J]. IEEE, 2012,12(1):44-48.
Sun X Y,Li C J,He X G,et al. Effect of MgO doped concentration on luminescence properties in Sr2SiO4:Eu2+ phosphor [J]. Chin.J.Lumin.(发光学报),2012,33(4):389-393 (in Chinese).
Jiang Q Y,Li C X,Ye R G,et al. Luminescence and energy transfer of Ce3+/Sm3+ co-doped glass and glass ceramics containing Zn2SiO4 nanocrystals for white LEDs [J]. Chin.J.Lumin.(发光学报),2012,33(4):371-376 (in English).
Jeon S K,Lee J G,Park E H,et al. The effect of the internal capacitance of InGaN-light emitting diode on the electrostatic discharge properties [J]. Appl.Phys.lett.,2009,94(13):131106-1-3.
Park T Y,Oh M S,Park S J.Improvement of electrostatic discharge characteristics and optical properties of GaN-based light-emitting diodes [J]. IEEE,2009,30(9):937-939.
Zheng Z Y,Chen Z M,Xian Y L,et al. Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers [J]. Appl.Phys.Lett., 2011,99(11):111109-1-3.
Park E H,Ferguson I T,Jeon S K,et al. InGaN-light emitting diode with high density truncated hexagonal pyramid shaped p-GaN hillocks on the emission surface [J]. Appl.Phys.Lett.,2006,89(25):251106-1-3.
Su Y K,Chang S J,Wei S C,et al. ESD engineering of nitride-based LEDs [J]. IEEE,2005,5(2):277-281.
Liu E K,Zhu B S,Luo J S.Physics of Semiconductor [M].Beijing:Publishing House of Electronics Industry,2003:54 (in Chinese).
Xiao Y P,Mo C L,Qiu C,et al. The aging characteristics of GaN-based blue LED on Si substrate [J]. Chin.J.Lumin.(发光学报),2010,31(3):364-368 (in Chinese).
Dai Q,Schubert M F,Kim M H,et al. Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities [J]. Appl.Phys.Lett.,2009,94(11):109-111.
Hangleiter A,Hitzel F,Netzel C,et al. Suppression of nonradiative recombination by V-shaped pits in GaInN=GaN quantum wells produces a large increase in the light emission efficiency [J]. Phys.Rev.Lett., 2005,95(1):127-132.
Meneghini M,Zehnder U,Hahn B,et al.Degradation of high-brightness green LEDs submitted to reverse electrical stress [J]. IEEE Electron Device Lett.,2009,30(10):1051-1053.
Le S P.Analysis and Research of ESD on Aging of GaN/Si Blue LEDs.Nanchang:Nanchang University,2007 (in Chinese).
Hsu C Y,Lan W H,Wu Y C S.Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes [J]. IEEE, 2003,83(12):2447-2449.
Meneghini M,Tazzoli A,Butendeich R,et al. Soft and hard failures of InGaN-based LEDs submitted to electrostatic discharge testing [J]. IEEE,2010,31(6):579-581.
Gao G B,Li X X.Reliability Physics of Semiconductor Device [M].Beijing:Science Press,1987:458-465 (in Chinese).
Cui D S,Guo W L,Cui B F,et al. Effects of human-body-mode electrostatic-discharge on GaN-based power light-emitting diode [J]. Acta Optica Sinica (光学学报),2011,33(3):0323004-1-5 (in Chinese).
Li H.Influence of Thermal Shock on InGaN/GaN MQW Blue LEDs on Si Substrate.Nanchang:Nanchang University,2011 (in Chinese).
Zhou Z,Feng S W,Zhang G C,et al. The aging characteristics of high-power GaN-based white light-emitting diodes [J]. Chin.J.Lumin.(发光学报),2011,32(10):1046-1050 (in Chinese).
Lu H Q,Li S Z,Yang W Q,et al. Analysis of the changes of LEDs characteristics before and after ESD shock [J]. Semiconductor Technology (半导体技术), 2010,10(2):957-960 (in Chinese).
Yuan C,Dai W W,Chen C,et al. Study on LED reliability in the aging process [J]. Semiconductor Optoelectronics (半导体光电),2011,32(3):339-342 (in Chinese).
Lin L,Chen Z Z,Chen T,et al. Characteristics of the accelerated aging white LEDs [J]. Chin.J.Lumin.(发光学报),2005,26(5):617-621 (in Chinese).
Zheng D S,Qian K Y,Luo Y.Life test and failure mechanism analyses for high-power LED [J]. Semiconductor Optoelectronics (半导体光电), 2005,26(02):87-91 (in Chinese).
Zhao E L.Research on The Reliability and Failure Mechanism Analysis of High Power LED.Beijing:Beijing University of Technology,2010 (in Chinese).
Xue Z Q,Huang S R,Zhang B P,et al. Analysis of failure mechanism of GaN-based white light-emitting diode [J]. Acta Physica Sinica (物理学报), 2010,59(7):5002-5009 (in Chinese).
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