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陕西科技大学 电气与信息工程学院,陕西 西安,710021
纸质出版日期:2012-10-10,
收稿日期:2012-6-29,
修回日期:2012-7-30,
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张静, 张方辉. 双空穴注入的绿色磷光有机电致发光器件[J]. 发光学报, 2012,(10): 1107-1111
ZHANG Jing, ZHANG Fang-hui. A Green Phosphorescent Organic Lighting Emitting Device with Double Hole Injection Layers[J]. Chinese Journal of Luminescence, 2012,(10): 1107-1111
张静, 张方辉. 双空穴注入的绿色磷光有机电致发光器件[J]. 发光学报, 2012,(10): 1107-1111 DOI: 10.3788/fgxb20123310.1107.
ZHANG Jing, ZHANG Fang-hui. A Green Phosphorescent Organic Lighting Emitting Device with Double Hole Injection Layers[J]. Chinese Journal of Luminescence, 2012,(10): 1107-1111 DOI: 10.3788/fgxb20123310.1107.
制作了一种新型绿色磷光有机电致发光二极管。器件结构为ITO/HAT-CN(
x
nm)/MoO
3
(30nm)/NPB(40nm)/TCTA(10nm)/CPB:GIr1(30nm
14%)/BCP(10nm)/Alq
3
(25nm)/LiF(1nm)/Al(100nm)
其中
X
=0
8
10
12
14
15nm。电流密度-电压-亮度特性表明该结构有利于降低驱动电压和增加器件亮度。当HAT-CN厚度为12nm时
器件的最高亮度可以达到32480cd/m
2
起亮电压为3.5V左右
发光效率为24.2cd/A。所设计的空穴型器件证明该器件结构具有很好的空穴注入和传输特性。
A novel structure of green phosphorescent organic light-emitting diode was fabricated.The structure of the devices was ITO/HAT-CN(
x
nm)/MoO
3
(30 nm)/NPB(40 nm)/TCTA(10 nm)/CPB:GIr1(30 nm
14%)/BCP(10 nm)/Alq
3
(25 nm)/LiF(1 nm)/Al(100 nm)
in which
X
was 0
8
10
12
14
15 nm
respectively.The current density-voltage-luminance(
J-V-L
) performance shows that this structure is beneficial to the reduction of the driving voltage and the enhancement of the luminance.It was found that the best thickness was 12 nm HAT-CN layer
the highest luminance of the device was 32 480 cd/m
2
at 15 V
the turn-on voltage of this device was 3.5 V and the current efficiency was 24.2 cd/A.Hole-only device was fabricated to verify the enhancement of hole injection and transport properties of this structure.
OLED双空穴注入层绿色磷光
organic light emitting diodesdouble hole injection layersgreen phosphorescence
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