高功函数的钛酸镧掺杂氧化铟透明导电薄膜的制备与光电特性研究

田苗苗; 李春杰; 贺小光; 郭峰; 范翊; 王宁

doi:10.3788/fgxb20123310.1055

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高功函数的钛酸镧掺杂氧化铟透明导电薄膜的制备与光电特性研究

材料合成及性能研究 | 更新时间：2020-08-12

- 高功函数的钛酸镧掺杂氧化铟透明导电薄膜的制备与光电特性研究
- Preparation and Characteristics of High Work-function and Ultraviolet-luminescence Lanthanum Titanate-doped Indium Oxide Thin Films
- 发光学报 2012年33卷第10期页码：1055-1059
- 作者机构：
  
  1. 中国科学院长春应用化学研究所高分子物理与化学国家重点实验室,吉林长春,130022
  2. 长春师范学院物理学院,吉林长春,130032
  3. 中国科学院长春应用化学研究所高分子复合材料工程实验室,吉林长春,130022
  4. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
  
  国家自然科学基金(21104077)();吉林省教育厅"十二五"科学技术研究项目(高效率有机太阳能电池研究)();长春师范学院自然科学基金(2010第009号)资助项目
- DOI：10.3788/fgxb20123310.1055
  中图分类号： TN383+.1
- 纸质出版日期：2012-10-10，
  
  收稿日期：2012-8-7，
  
  修回日期：2012-8-24，
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田苗苗, 李春杰, 贺小光, 郭峰, 范翊, 王宁. 高功函数的钛酸镧掺杂氧化铟透明导电薄膜的制备与光电特性研究[J]. 发光学报, 2012,(10): 1055-1059

TIAN Miao-miao, LI Chun-jie, HE Xiao-guang, GUO Feng, FAN Yi, WANG Ning. Preparation and Characteristics of High Work-function and Ultraviolet-luminescence Lanthanum Titanate-doped Indium Oxide Thin Films[J]. Chinese Journal of Luminescence, 2012,(10): 1055-1059
田苗苗, 李春杰, 贺小光, 郭峰, 范翊, 王宁. 高功函数的钛酸镧掺杂氧化铟透明导电薄膜的制备与光电特性研究[J]. 发光学报, 2012,(10): 1055-1059 DOI： 10.3788/fgxb20123310.1055.

TIAN Miao-miao, LI Chun-jie, HE Xiao-guang, GUO Feng, FAN Yi, WANG Ning. Preparation and Characteristics of High Work-function and Ultraviolet-luminescence Lanthanum Titanate-doped Indium Oxide Thin Films[J]. Chinese Journal of Luminescence, 2012,(10): 1055-1059 DOI： 10.3788/fgxb20123310.1055.

摘要

制备了一种新型的具有高功函数的掺钛酸镧(LaTiO

)的氧化铟(ILTO)三元透明导电氧化物薄膜

并研究了其光电特性。EDX能谱测试结果证实了样品中In、La及Ti的存在

薄膜的掺杂具有良好的均匀性及一致性。由原子力显微镜测试可知

在一个5μm×5μm的扫描区域内

样品的表面粗糙度(RMS)较小

为1nm量级。ILTO薄膜在可见光区域的平均透过率超过了85%

其功函数接近于金的功函数(5.2eV左右)

远高于目前商业化的ITO的功函数(4.5~4.7eV)。由于导电薄膜的功函数在光电器件中对异质结界面的势垒高度有着直接影响

较高的功函数可以提高载流子的注入及抽取能力

因此采用ILTO作为光电器件的阳极将有望改善器件的性能。

Abstract

A novel high work-function (WF) transparent conducting oxides

lanthanum titanate (LaTiO

)-doped indium oxide (ILTO)

with notable electrical and optical features

synthesized by a double electron beam evaporation associated with End-Hall ion assisted deposited technology is introduced.Its room-temperature ultraviolet photoluminescence (PL) with a peak at around 386 nm are determined.A high WF near 5.20 eV is determined for the as-deposited ILTO samples.As far as we know

this is the first report on PL emission at room temperature as well as high-WF properties in a multi-doping transparent oxide semiconductor.The effects of high WF afford more opportunities to develop and optimize the performance of organic photoelectric devices

and facilitate the fabrication process of devices.

关键词

功函数掺杂透明导电薄膜光致发光

Keywords

work functiondopedtransparent conducting oxidesphotoluminescence

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