基于聚噻吩/聚己内酯共混物的有机薄膜晶体管

王晓鸿; 邱龙臻

doi:10.3788/fgxb20123308.0857

您当前的位置：

首页 >

文章列表页 >

基于聚噻吩/聚己内酯共混物的有机薄膜晶体管

器件制备及器件物理 | 更新时间：2020-08-12

- 基于聚噻吩/聚己内酯共混物的有机薄膜晶体管
- Organic Thin Film Transistors Based on Blends of Poly(3-hexylthiophene) and Polycaprolactone
- 发光学报 2012年33卷第8期页码：857-862
- 作者机构：
  
  特种显示技术教育部重点实验室, 特种显示技术国家工程实验室, 现代显示技术省部共建国家重点实验室培育基地, 合肥工业大学光电技术研究院,安徽合肥,230009
- 作者简介：
- 基金信息：
  
  973计划前沿专项(2010CB334704,2012CB723406)();国家自然科学基金(21174036,51103034)资助项目()
- DOI：10.3788/fgxb20123308.0857
  中图分类号： TN321+.5
- 纸质出版日期：2012-8-10，
  
  收稿日期：2012-4-28，
  
  修回日期：2012-6-24，
扫描看全文
王晓鸿, 邱龙臻. 基于聚噻吩/聚己内酯共混物的有机薄膜晶体管[J]. 发光学报, 2012,33(8): 857-862

WANG Xiao-hong, QIU Long-zhen. Organic Thin Film Transistors Based on Blends of Poly(3-hexylthiophene) and Polycaprolactone[J]. Chinese Journal of Luminescence, 2012,33(8): 857-862
王晓鸿, 邱龙臻. 基于聚噻吩/聚己内酯共混物的有机薄膜晶体管[J]. 发光学报, 2012,33(8): 857-862 DOI： 10.3788/fgxb20123308.0857.

WANG Xiao-hong, QIU Long-zhen. Organic Thin Film Transistors Based on Blends of Poly(3-hexylthiophene) and Polycaprolactone[J]. Chinese Journal of Luminescence, 2012,33(8): 857-862 DOI： 10.3788/fgxb20123308.0857.

摘要

选择聚3-己基噻吩(P3HT)/聚己内酯(PCL)双晶共混体系制备了不同配比的共混物有机薄膜晶体管。电学性能研究发现

随着共混物中P3HT含量降低

薄膜晶体管的场效应迁移率、开关电流比和阈值电压等性能缓慢降低。当P3HT质量分数为40%时

共混物薄膜仍具有较好的场效应性能

迁移率为0.008 cm

·V

-1

·s

-1

开关电流比为5×10

阈值电压为45.5 V。原子力显微镜测试结果表明:共混物成膜时发生明显的垂直相分离

在界面处形成连续的半导体层

有利于载流子传输。

Abstract

A blending crystalline system containing poly(3-hexylthiophene) and polycaprolactone was investigated. The electric measurements reveal that the field-effect performances of blend films

such as mobility

on/off current ratio and threshold voltage

decrease slowly with P3HT content reducing. However

the devices still have relatively good performance even P3HT content was 40%. According to the AFM studies

vertical phase separation occurs in the blend films

and a connective semiconducting layer can be observed in the interface between insulating layer and active layer

which is beneficial to transport of charge carriers.

关键词

有机薄膜晶体管半导体/绝缘聚合物相分离电性能

Keywords

organic thin-film transistors (OTFTs)semiconducting/insulating blendphase separationelectric performance

references

Sanderson K. Display of flexibility [J]. Nature, 2007, 445(7127):473-473.

Noh Y Y, Zhao N, Caironi M, et al. Downscaling of self-aligned, all-printed polymer thin-film transistors [J]. Nat. Nanotechnol., 2007, 2(12):784-789.

Arias A C, MacKenzie J D, McCulloch I, et al. Materials and applications for large area electronics: Solution-based approaches [J]. Chemical Reviews, 2010, 110(1):3-24.

Zhang H, Zhang L, Li J, et al. Improvment of ZnO-TFT performance by annealing ZnO film [J]. Chin. J. Lumin.(发光学报), 2011, 32(12):1281-1285 (in Chinese).

Wang W, Ma D G, Gao Q, et al. Memory and photo-responses characteristics of organic thin film transistors based on multi-layer gate dielectric [J]. Chin. J. Lumin.(发光学报), 2011, 32(7):729-735 (in Chinese).

Sirringhaus H. Device physics of solution-processed organic field-effect transistors [J]. Advanced Materials, 2005, 17 (20):2411-2425.

Choi M C, Kim Y, Ha C S. Polymers for flexible displays: From material selection to device applications [J]. Progress in Polymer Science, 2008, 33(6):581-630.

Goffri S, Muller C, Stingelin-Stutzmann N, et al. Multicomponent semiconducting polymer systems with low crystallization-induced percolation threshold [J]. Nature Materials, 2006, 5(12):950-956.

Zhao K, Ding Z C, Xue L J, et al. Crystallization-induced phase segregation based on double-crystalline blends of poly(3-hexylthiophene) and poly(ethylene glycol)s [J]. Macromolecular Rapid Communications, 2010, 31(6):532-538.

Babel A, Jenekhe S A. Morphology and field-effect mobility of charge carriers in binary blends of poly(3-hexylthiophene) with poly and polystyrene [J]. Macromolecules, 2004, 37(26):9835-9840.

Walheim S, Boltau M, Mlynek J, et al. Structure formation via polymer demixing in spin-cast films [J]. Macromolecules, 1997, 30(17):4995-5003.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

P3HT/PMMA双层聚合物电双稳器件的研究

Ga掺入对立方相MgZnO薄膜晶体结构的影响

Bphen作为电极缓冲层对有机薄膜晶体管性能的改善

连续氙灯发光光谱的设计与应用研究

TiN(001)表面上3N1Ti1Si岛构型及其演变的第一性原理研究