GaN基光栅的干法刻蚀工艺

郭孝浩; 胡磊; 任霄钰; 吴思; 张立群; 张志军; 杨辉; 刘建平

doi:10.37188/CJL.20210037

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GaN基光栅的干法刻蚀工艺

发光产业及技术前沿 | 更新时间：2021-06-18

- GaN基光栅的干法刻蚀工艺
- Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching
- 发光学报 2021年42卷第6期页码：889-895
- 作者机构：
  
  1.上海大学材料科学与工程学院, 上海　 200444
  2.中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室, 江苏苏州　 215123
- 作者简介：
  
  [ "郭孝浩(1996-)，男，河南信阳人，硕士研究生，2018年于江南大学获得学士学位，主要从事GaN基激光器器件与工艺的研究。E-mail: xhguo2019@sinano.ac.cn" ]
  [ "刘建平(1976-)，男，江西上饶人，博士，研究员，博士研究生导师，2004年于中国科学院半导体研究所获得博士学位，主要从事氮化物半导体材料与器件以及MOCVD外延生长的研究。E-mail:jpliu2010@sinano.ac.cn" ]
- 基金信息：
  
  国家重点研发计划(2017YFE0131500;2017YFB0405000);国家自然科学基金(61834008;61574160;61804164;61704184);中国博士后科学基金(2018M630619);江苏省自然科学基金(BK20180254)
- DOI：10.37188/CJL.20210037
  中图分类号： TN256
- 纸质出版日期：2021-06-01，
  
  收稿日期：2021-01-23，
  
  修回日期：2021-02-18，
- 稿件说明：
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郭孝浩, 胡磊, 任霄钰, 等. GaN基光栅的干法刻蚀工艺[J]. 发光学报, 2021,42(6):889-895.

XIAO-HAO GUO, LEI HU, XIAO-YU REN, et al. Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching. [J]. Chinese journal of luminescence, 2021, 42(6): 889-895.
郭孝浩, 胡磊, 任霄钰, 等. GaN基光栅的干法刻蚀工艺[J]. 发光学报, 2021,42(6):889-895. DOI： 10.37188/CJL.20210037.

XIAO-HAO GUO, LEI HU, XIAO-YU REN, et al. Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching. [J]. Chinese journal of luminescence, 2021, 42(6): 889-895. DOI： 10.37188/CJL.20210037.

摘要

研究了基于BCl

/Cl

电感耦合等离子体(ICP)刻蚀对氮化镓基分布式反馈激光器中光栅的刻蚀，详细研究了刻蚀气体BCl

/Cl

流量比和压强对刻蚀台面侧壁的粗糙度、陡直度以及刻蚀速率的影响，发现以SiO

作为硬掩膜，刻蚀速率、台面侧壁粗糙度以及陡直度随着刻蚀气体BCl

/Cl

流量比以及压强变化有着显著变化。保持ICP功率和射频功率分别为300 W和100 W，当刻蚀气体BCl

/Cl

流量比为1、压强为1.33 Pa(10 mTorr)，最终得到200.6 nm/min的可控刻蚀速率、倾角85.3°且光滑的台面侧壁，实现了在保证光栅侧壁光滑的同时提升侧壁倾角。陡直且光滑的光栅对于提升氮化镓基分布式反馈激光器的器件性能及其稳定性非常重要。

Abstract

Inductively coupled plasma(ICP) etching parameters for GaN grating fabrication are investigated. The effects of etch parameters

including the etching gas BCl

/Cl

flow ratio and pressure

on the roughness and steepness of the mesa sidewall and etching rate are discussed. It is found that by using SiO

as the hard mask

the roughness and steepness of the etching mesa sidewall was greatly influenced by the etching parameters. A controllable etching rate of 200.6 nm/min

angle of 85.3° and smooth mesa sidewall are obtained using BCl

/Cl

ratio of 1∶1

1.33 Pa(10 mTorr) pressure

ICP power of 300 W and RF power of 100 W. Finally

the angle of the sidewall is increased while ensuring the smooth sidewall of the grating. Steep and smooth gratings are very important for improving the device performance and stability of GaN-based distributed feedback laser diode.

关键词

氮化镓分布式反馈光栅电感耦合等离子体刻蚀BCl3/Cl2

Keywords

gallium nitridedistributed feedbackgratinginductively coupled plasma etchingBCl3/Cl2

references

HOLGUíN-LERMA J A, NG T K, OOI B S. Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating [J].Appl. Phys. Express, 2019, 12(4):042007-1-4.

DENG Z J, LI J Z, LIAO M L, et al. InGaN/GaN distributed feedback laser diodes with surface gratings and sidewall gratings [J].Micromachines, 2019, 10(10):699.

KANG J H, WENZEL H, FREIER E, et al. Continuous-wave operation of DFB laser diodes based on GaN using 10th-order laterally coupled surface gratings [J].Opt. Lett., 2020, 45(4):935-938.

ZHANG H J, COHEN D A, CHAN P, et al. Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating [J].Opt. Lett., 2019, 44(12):3106-3109.

SLIGHT T J, STANCZYK S, WATSON S, et al. Continuous-wave operation of (Al, In)GaN distributed-feedback laser diodes with high-order notched gratings [J].Appl. Phys. Express, 2018, 11(11):112701.

LI X L, MA P, JI X L, et al. Implementation of slow and smooth etching of GaN by inductively coupled plasma [J].J. Semicond., 2018, 39(11):113002-1-6.

NAHHAS A M. Review of GaN nanostructured based devices [J].Am. J.Nanomater., 2018, 6(1):1-14.

LI Z C, HUANG R, CHEN X, et al. The significant effect of carbon and oxygen contaminants at Pd/p-GaN interface on its Ohmic contact characteristics [J].Phys. Status Solidi(A), 2020, 218(4):2000603.

TU Z Z, LV L L, SONG R X, et al. Etch tapered angle on the influence of GaN membrane grating reflectance spectra [J].Optik, 2018, 165:351-355.

ZHOU S J, CAO B, LIU S. Dry etching characteristics of GaN using Cl2/BCl3 inductively coupled plasmas [J].Appl. Surf. Sci., 2010, 257(3):905-910.

DOUGLAS E A, SANCHEZ C A, KAPLAR R J, et al. Inductively coupled BCl3/Cl2/Ar plasma etching of Al-rich AlGaN [J].J. Vac. Sci. Technol. A, 2017, 35(2):021305.

ZHAO Y F, WANG H, ZHANG W, et al. Controllable process of nanostructured GaN by maskless inductively coupled plasma (ICP) etching [J].J. Micromech. Microeng., 2017, 27(11):115004.

SUN Y, KANG X W, ZHENG Y K, et al. Optimization of mesa etch for a quasi-vertical gan schottky barrier diode (SBD) by inductively coupled plasma (ICP) and device characteristics [J].Nanomaterials, 2020, 10(4):657-1-13.

LI W Y, LUO Y, XIONG B, et al. Fabrication of GaN-based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching [J].Phys. Status Solidi (A), 2015, 212(10):2341-2344.

YU C C, CHU C F, TSAI J Y, et al. Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching [J].Jpn. J. Appl. Phys., 2002, 41(8B):L910-L912.

ROSLI S A, AZIZ A A, HASHIM M R. ICP-RIE dry etching using Cl2-based on GaN [J].Sains Malays., 2011, 40(1):79-82.

HAN Y J, XUE S, GUO W P, et al. Highly selective dry etching of GaN over AlGaN using inductively coupled Cl2/N2/O2 plasmas [J].Jpn. J. Appl. Phys., 2003, 42(10A):L1139-L1141.

RAWAL D S, SEHGAL B K, MURALIDHARAN R, et al. Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching [J].Vacuum, 2012, 86(12):1844-1849.

QIU R F, LU H, CHEN D J, et al. Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis [J].Appl. Surf. Sci., 2011, 257(7):2700-2706.

LIU Z, WANG Y J, XIA X X, et al. Fabrication of GaN hexagonal cones by inductively coupled plasma reactive ion etching [J].J. Vac. Sci. Technol. B, 2016, 34(4):041226-1-4.

TAHHAN M, NEDY J, CHAN S H, et al. Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness [J].J. Vac. Sci. Technol. A, 2016, 34(3):031303.

ZHOU S J, CAO B, LIU S. Optimized ICP etching process for fabrication of oblique GaN sidewall and its application in LED [J].Appl. Phys. A, 2011, 105(2):369-377.

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