光/电激发方式对AlGaInP及GaN 基LED电学特性的影响

文静; 庄伟; 文玉梅; 李平; 赵学梅; 马跃东

doi:null

您当前的位置：

首页 >

文章列表页 >

光/电激发方式对AlGaInP及GaN 基LED电学特性的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 光/电激发方式对AlGaInP及GaN 基LED电学特性的影响
- Influence of Optical/Electrical Excitating Style on The Deality Factor of AlGaInP and GaN-based LEDs
- 发光学报 2011年32卷第10期页码：1057-1063
- 作者机构：
  
  1. 重庆大学光电工程学院重庆,400044
  2. 重庆大学光电技术及系统教育部重点实验室重庆,400044
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61006053,60676031)();重庆市科委自然科学基金计划(CSTC,2008BB3156)();重庆市科技攻关(CSTC,2009AC41
- DOI：
  中图分类号： TN312+.8
- 纸质出版日期：2011-10-22，
  
  网络出版日期：2011-10-22，
  
  收稿日期：2011-6-24，
  
  修回日期：2011-8-3，
扫描看全文
文静, 庄伟, 文玉梅, 李平, 赵学梅, 马跃东. 光/电激发方式对AlGaInP及GaN 基LED电学特性的影响[J]. 发光学报, 2011,32(10): 1057-1063

WEN Jing, ZHUANG Wei, WEN Yu-mei, LI Ping, ZHAO Xue-mei, MA Yue-dong. Influence of Optical/Electrical Excitating Style on The Deality Factor of AlGaInP and GaN-based LEDs[J]. Chinese Journal of Luminescence, 2011,32(10): 1057-1063
文静, 庄伟, 文玉梅, 李平, 赵学梅, 马跃东. 光/电激发方式对AlGaInP及GaN 基LED电学特性的影响[J]. 发光学报, 2011,32(10): 1057-1063 DOI：

WEN Jing, ZHUANG Wei, WEN Yu-mei, LI Ping, ZHAO Xue-mei, MA Yue-dong. Influence of Optical/Electrical Excitating Style on The Deality Factor of AlGaInP and GaN-based LEDs[J]. Chinese Journal of Luminescence, 2011,32(10): 1057-1063 DOI：

摘要

采用光激励与电激励的方式对AlGaInP与InGaN/GaN基LED的电学特性进行了表征

并重点比较分析了两种激励方式的下理想因子这一重要参数的差异。探讨了影响LED理想因子的因素

确定理想因子的适宜注入强度范围。研究结果表明:结温与注入强度是影响LED理想因子的重要因素;对于特定类型的发光二极管

空间电荷区起主导作用时对应的注入强度范围内能够获得反映器件性能的LED理想因子。LED的理想因子与光激励或者电激励方式无关

因而光激励能够代替电激励对LED电学特性及理想因子进行非接触检测。

Abstract

The electrical characteristic of AlGaInP and InGaN/GaN-based LEDs were measured and explored under optical and electrical excitation. One of the significant parameter of LED characteristic

was mainly taken into consideration under the two varied excitation styles. The results showed that both junction temperature and injecting intensity of carrier influenced

. The essential performance of devices was gained within injecting intensity range where the action of space-charge region plays the most important role on current transferring. We found

obtained in different motivation conditions

is independent on the excitation ways. Therefore

optical excitation can be applied to take place of electrical excitation for the non-contact detection of

in LEDs.

关键词

理想因子发光二极管(LED)光激励电激励结温

Keywords

ideality factorlight-emitting diodeoptical excitationelectrical excitationjunction temperature

references

Seo J W, Oh H S, Kwak J S. High-efficiency vertical AlGaInP light-emitting diodes with conductive omni-derectional reflectors [J]. Current Applied Physics, 2011(1):00074-1-14.[2] Yi Juemin, Li Hongbo, Tang Fangqiong, et al. White-lighting LEDs from InGaN blue LEDs and CdTe nanocrystals [J]. Chin. J. Lumin. (发光学报), 2008, 29 (6):1071-1074 (in Chinese).[3] Liu Li, Wu Qing, Huang Xian, et al. Promoting of the phosphor-based white-LED and optical properties [J]. Chin. J. Lumin. (发光学报), 2007, 28 (6):890-894 (in Chinese).[4] Zhu D, Xu J, Noemaun A N, et al. The origin of the high diode-ideality factor in GaInN/GaN multiple quantum well light-emitting diodes [J]. Appl. Phys. Lett., 2009, 94 (8):081113-1-3.[5] Masui H. Diode ideality factor in modern light-emitting diodes [J]. Semicond. Sci. Tech., 2011, 26 (7):075011(1-6).[6] Shah J M, Li Y L, Gessmann Th, et al. Experimental analysis and theoretical model for anomalously high ideality factors (n2) in AlGaN/GaN p-n junction diodes [J]. J. Appl. Phys., 2003, 94 (4):2627-2630.[7] Masui H, Nakamura S, DenBaars S P, et al. Technique to evaluate the diode ideality factor of light-emitting diodes [J]. Appl. Phys. Lett., 2010, 96 (7):073509-1-3.[8] Wei Guohua, Wang Bin, Li Junmei, et al. Temperature dependence of the photoluminescence properties and the research on the mechanism of In0.2Ga0.8As/GaAs single quantum well [J]. Chin. J. Lumin. (发光学报), 2010, 31 (5):619-623 (in Chinese).[9] Wen Jing, Wen Yumei, Li Ping, et al. Domiant factor impacting the photoluminescence and electroluminescence spectra in AlInGaP LEDs [J]. OptoelectronicsLaser (光电子激光), 2010, 21 (5):659-663 (in Chinese).[10] Guo X, Schubert E F. Current crowding in GaN/InGaN light emitting diodes on insulating substrates [J]. J. Appl. Phys., 2001, 90 (8):4190-4195.[11] Neamen D A. Semiconductor Physics and Devices [M]. Boston: McGraw-Hill, 2003:245-254.[12] Acharya Y B. Effect of temperature dependence of band gap and device constant on I-V characteristics of junction diode [J]. Solid State Electronics, 2001, 45 (7):1115-1119.[13] Sah C T, Noyce R N, Shockley W. Carrier generation and recombination in p-n junctions and p-n junction characteristics [J]. Proc. IRE, 1957, 45 :1228-1243.[14] Yan D W, Lu H, Chen D J, et al. Forward tunneling current in GaN-based blue light-emitting diodes [J]. Appl. Phys. Lett., 2010, 96 (8):083504-1-3.[15] Vashni Y P. Temperature dependence of the energy gap in semiconductor [J]. Physical, 1967, 34 (1):149-154.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

基于PtOEP分子温度探针对OLED结温的判定及实验研究

嵌埋陶瓷散热基板对白光LED性能的影响

烧结空洞对半导体激光器热分布的影响

多芯片LED器件热学特性分析

C-mount封装激光器热特性分析与热沉结构优化研究