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1. 中国科学院 研究生院
2. 中国科学院长春光学精密机械与物理研究所 应用光学国家重点实验室
收稿:2011-06-20,
修回:2011-7-13,
网络首发:2011-10-22,
纸质出版:2011-10-22
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尹悦, 梁静秋, 梁中翥, 王维彪. 电极结构对AlGaInP-LED阵列电流分布的影响[J]. 发光学报, 2011,32(10): 1051-1056
YIN Yue, LIANG Jing-qiu, LIANG Zhong-zhu, WANG Wei-biao. Effects of Electrode Structure on The Current Distribution of AlGaInP-LED Array[J]. Chinese Journal of Luminescence, 2011,32(10): 1051-1056
以AlGaInP-LED外延片为基片
设计了分辨率为320×240、像素尺寸为100 μm×100 μm的微型LED阵列。针对目前LED阵列普遍存在的电流分布不均匀的问题
建立了内部电流分布模型
研究了电极结构、电极尺寸及电极间距等不同因素对LED电流分布造成的影响。在单条形电极结构的基础上进行优化
综合考虑不透明电极的遮光效应等因素得到三条形电极结构为最优的电极结构
该电极结构的LED有源层均匀发光面积比未经优化的单条形电极提高了65.02%
比双条形电极提高25.63%
有效提高了微型LED阵列的出光效率
对改善LED芯片发光均匀性具有参考意义。
paper
Yan Xiaosong, Li Wanwan, Liu Ji, et al. A single phase white-light-emitting phosphor suitable for UV-LED excitation [J]. Chin. J. Lumin.(发光学报), 2010, 31 (1):39-43 (in Chinese).[2] Tian Chuanjun, Zhang Xiyan, Zou Jun, et al. Temperature effect on the photoelectric parameter of high-power LED illumination system [J]. Chin. J. Lumin.(发光学报), 2010, 31 (1):96-100 (in Chinese).[3] Deng Honggui, Li Zhijian, Guo Shengwei. Method of gray value correction in LED display screen based on LED electroluminescence response [J]. Chin. J. Lumin.(发光学报), 2010, 31 (1):145-149 (in Chinese).[4] Schineller B, Junas Y, Heuken M, et al. Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diode [J]. Materials Science and Engineering, 1998, B 51 (1):34-38.[5] Zheng Zhibin, Peng Wanhua. Characteristics and reliability of a ultra bright InGaAlP LED [J]. Chinese Journal of Liquid Crystal and Displays (液晶与显示), 2001, 16 (2):145-149 (in Chinese).[6] Liang Jingqiu. Research advances in micro-LED display devices [J]. OME Information (光机电信息), 2010, 27 (12):21-27 (in Chinese).[7] Zheng Zhibin. Analysis on the luminous characteristics of InGaAlP LEDs [J]. Chinese Journal of Liquid Crystal and Displays (液晶与显示), 2003, 18 (6):450-453 (in Chinese).[8] Jin S X, Li J, Lin J Y, et al. InGaN/GaN quantum well interconnected microdisk light emitting diodes [J]. Appl. Phys. Lett., 2000, 77 (20):3236-3238.[9] Geib K M, Choquette K D, Serkland D K, et al. Fabrication and performance of two-dimensional matrix addressable arrays of integrated vertical-cavity lasers and resonant cavity photodetectors [J]. IEEE Journal of Selected Topics in Quantum Electron, 2002, 8 (4):943-947.[10] Meng Qinju, Liu Haibo, Meng Qinhui. Physics of Semiconductor Devices [M]. Beijing: Science Press, 2005:253 (in Chinese).[11] Lin Yueming, Zhang Junbing, Zeng Xianghua. The simulation of AlGaInP LEDs light output efficiency [J]. Chin. J. Lumin.(发光学报), 2009, 30 (2):201-208 (in Chinese).[12] Malyutenko V K, Malyutenko O Y, Podoltsev A D, et al. Current crowding in InAsSb light-emitting diodes [J]. Appl. Phys. Lett. 2001, 79 (25):4228-4230.[13] Wang Guohong, Ma Xiaoyu, Wang Shutang, et al. Development of AlGaInP orange light emitting diode [J]. Semiconductor Technology (半导体技术), 1988, 23 (4):10-12 (in Chinese)[14] Liang Jingqiu, Li Jia, Wang Weibiao. Design and fabrication of AlGaInP LED array [J]. Chinese Journal of Liquid Crystal and Displays (液晶与显示), 2006, 21 (6):604-608 (in Chinese).[15] Chang S J, Chang C S, Su Y K, et al. Chirped GaAs-AlAs distributed bragg reflectors for high brightness yellow-green light-emitting diodes [J]. IEEE Photonics Technology Lett., 1997, 9 (2):182-184.[16] Amann M C, Kappeler F. Analytical solution for the lateral current distribution in multiple stripe laser diodes [J]. Appl. Phys. Lett.,1986, 48 (25):1710-1712.
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