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1. 中国科学院 研究生院
2. 中国科学院 长春光学精密机械与物理研究所 激发态物理重点实验室
收稿:2010-01-20,
修回:2010-6-5,
网络首发:2010-09-21,
纸质出版:2010-09-21
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于淑珍, 缪国庆, 金亿鑫, 张立功, 宋 航, 蒋 红, 黎大兵, 李志明, 孙晓娟. Si衬底上InP纳米线的晶体结构和光学性质[J]. 发光学报, 2010,31(5): 767-772
YU Shu-zhen, MIAO Guo-qing, JIN Yi-xin, ZHANG Li-gong, SONG Hang, JIANG Hong, LI Da-bing, LI Zhi-ming, SUN Xiao-juan. The Crystal Structure and Optical Properties of InP Nanowires Grown on Si Substrate[J]. 发光学报, 2010,31(5): 767-772
于淑珍, 缪国庆, 金亿鑫, 张立功, 宋 航, 蒋 红, 黎大兵, 李志明, 孙晓娟. Si衬底上InP纳米线的晶体结构和光学性质[J]. 发光学报, 2010,31(5): 767-772 DOI:
YU Shu-zhen, MIAO Guo-qing, JIN Yi-xin, ZHANG Li-gong, SONG Hang, JIANG Hong, LI Da-bing, LI Zhi-ming, SUN Xiao-juan. The Crystal Structure and Optical Properties of InP Nanowires Grown on Si Substrate[J]. 发光学报, 2010,31(5): 767-772 DOI:
采用金属有机化学气相沉积技术
利用自催化法
在Si(100)、(111)衬底上成功生长了InP纳米线。利用扫描电镜观察样品表面
在Si(100)、(111)衬底上生长的纳米线形貌相似
纳米线面密度不同。利用X射线衍射和透射电镜研究纳米线的生长取向和晶体结构
结果显示纳米线具有闪锌矿结构
生长方向〈111〉
并且具有层状孪晶结构。与InP体材料相比
纳米线的光致发光峰位蓝移
半峰全宽增大
拉曼散射TO和LO峰向低波数频移
频移随激发光功率减弱而减小。
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